BUK7L3R3-34BRC N-channel TrenchPLUS standard level FET Rev. 02 — 26 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance, internal gate resistor, ElectroStatic Discharge (ESD) protection diodes and clamping diodes that are guaranteed to prevent MOSFET avalanching. 1.2 Features n Internal gate resistor n 175 °C rated n Q101 compliant n ESD and overvoltage protection 1.3 Applications n Automotive systems n Motors, lamps and solenoids n General purpose power switching n 12 V loads 1.4 Quick reference data n EDS(AL)S ≤ 1.9 J n ID ≤ 75 A n RDSon = 2.9 mΩ (typ) n Ptot ≤ 298 W 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline Symbol D mb G S sym094 1 2 3 SOT78C (TO-220) BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 3. Ordering information Table 2. Ordering information Type number BUK7L3R3-34BRC Package Name Description TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C BUK7L3R3-34BRC_2 Product data sheet Version © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 2 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions drain-source voltage [1] VDGR drain-gate voltage (DC) [1] VGS gate-source voltage VDS drain current ID RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Min Max Unit - 34 V - 34 V - ±20 V [2] - 218 A [3][4] - 75 A [3] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 872 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 298 W IDG(CL) drain-gate clamping current tp = 5 ms; δ = 0.01 - 50 mA IGS(CL) gate-source clamping current continuous - 10 mA tp = 5 ms; δ = 0.01 - 50 mA Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C [2] - 218 A [3][4] - 75 A Tmb = 25 °C; pulsed; tp ≤ 10 µs - 872 A unclamped inductive load; ID = 75 A; VDS ≤ 34 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C - 1.9 J - - J C = 100 pF - 8 kV C = 250 pF - 8 kV Source-drain diode reverse drain current IDR IDRM peak reverse drain current Tmb = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Vesd electrostatic discharge voltage [5] all pins; human body model; R = 1.5 kΩ [1] Voltage is limited by clamping. [2] Current is limited by power dissipation chip rating. [3] Continuous current is limited by package. [4] Refer to literature 9397 750 12572 for further information. [5] Maximum value not quoted. Refer to application note AN10273 for further information. a) Repetitive rating defined in Figure 14. b) Single-pulse avalanche rating limited by a Tj(max) of 175 °C. c) Repetitive avalanche rating limited by an average junction temperature of 170 °C. BUK7L3R3-34BRC_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 3 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 03aa16 120 003aaa861 250 ID (A) Pder (%) 200 80 150 100 40 (1) 50 0 0 50 100 150 Tmb (°C) 0 200 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ------------------------ × 100 % P tot ( 25°C ) (1) Capped at 75 A due to package Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature 003aaa862 104 ID (A) 103 Limit RDSon = VDS / ID tp = 10 µ s 100 µ s 102 (1) 1 ms DC 10 ms 100 ms 10 1 10-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse (1) Capped at 75 A due to package Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7L3R3-34BRC_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 4 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-mb) Conditions Min Typ Max Unit thermal resistance from junction to ambient - 60 - K/W thermal resistance from junction to mounting base - - 0.5 K/W 003aaa863 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 δ= P 0.02 single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7L3R3-34BRC_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 5 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 34 - 45 V Tj = −55 °C 34 - 45 V - 41 - V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.1 0.6 µA Tj = 150 °C - 5 50 µA Static characteristics V(BR)DG drain-gate breakdown voltage ID = 2 mA; VGS = 0 V IGD(CL) = −2 mA; ID = 1 A; see Figure 17 and 18 VDS(CL) drain-source clamping voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 IDSS drain leakage current VDS = 16 V; VGS = 0 V Tj = 175 °C V(BR)GSS gate-source breakdown voltage IG = ±1 mA; −55 °C < Tj < +175 °C IGSS gate leakage current VGS = ±10 V; VDS = 0 V - 30 250 µA 20 22 - V Tj = 25 °C - 5 1000 nA Tj = 175 °C - - 50 µA - - 150 µA - 2.9 3.3 mΩ - - 6.3 mΩ - 11 - Ω VGS = ±16 V; VDS = 0 V Tj = 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 7 and 8 Tj = 25 °C Tj = 175 °C RG gate resistance BUK7L3R3-34BRC_2 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 6 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET Table 5. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ID = 25 A; VDS = 27 V; VGS = 10 V; see Figure 12 - 109 - nC - 22 - nC - 55 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 16 - 5050 6730 pF - 1300 1560 - 510 690 pF VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω - 69 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 150 - ns td(off) turn-off delay time - 290 - ns tf fall time LD internal drain inductance internal source inductance LS pF - 210 - ns measure from drain lead 6 mm from package to center of die - 4.5 - nH measure from contact screw on mounting base to center of die - 3.5 - nH measure from source lead from package to source bonding pad - 7.5 - nH Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 13 - 0.85 1.2 V trr reverse recovery time - 93 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 30 V - 65 - nC [1] RDSon measured at 1.5 mm away from the plastic body. ID (A) 003aaa869 300 RDSon (mΩ) 7 10 250 003aaa870 6 8 9 20 5 200 6.5 150 4 6 100 5 50 3 VGS (V) = 4.5 0 2 0 2 4 6 8 VDS (V) 10 Tj = 25 °C 0 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values BUK7L3R3-34BRC_2 Product data sheet 5 © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 7 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 003aaa873 10 RDSon (mΩ) 03aa27 2 a 1.5 8 5.5 6 6 1 7 8 0.5 4 VGS (V) = 10 0 -60 2 0 40 80 120 160 ID (A) 200 Tj = 25 °C 03aa32 5 120 Tj (°C) 180 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 03aa35 10−1 ID (A) VGS(th) (V) 4 2 min 10−2 max 3 typ 10−3 min 10−4 typ max 10−5 1 0 60 120 180 Tj (°C) 10−6 0 2 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage BUK7L3R3-34BRC_2 Product data sheet 60 R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values 0 −60 0 © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 8 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 003aaa876 100 ID (A) 003aaa877 10 VGS (V) 80 8 60 6 VDS = 14 V 40 Tj = 175 °C VDS = 27 V 4 Tj = 25 °C 20 2 0 0 0 2 4 VGS (V) 6 0 50 100 QG (nC) 150 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aaa878 100 IS (A) Fig 12. Gate-source voltage as a function of gate charge; typical values 003aaa868 102 IAL (A) 80 (1) 10 60 (2) 40 1 20 (3) Tj = 175 °C Tj = 25 °C 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V 10-1 10-3 10-2 10-1 1 tAL (ms) 10 See Table note 5 of Table 3 “Limiting values”. (1) Single-pulse; Tj = 25 °C (2) Single-pulse; Tj = 150 °C (3) Repetitive Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 14. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7L3R3-34BRC_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 9 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 003aaa875 100 gfs (S) 003aaa874 8000 C (pF) 80 Ciss 6000 60 4000 Coss 40 2000 20 Crss 0 0 20 40 0 10-1 60 ID (A) Tj = 25 °C; VDS = 25 V 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 15. Forward transconductance as a function of drain current; typical values 003aaa727 43 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aac051 44 VDS(CL) (V) VDS(CL) (V) 42 42 Tj = 175 °C Tj = 175 °C Tj = 25 °C Tj = 25 °C 40 41 Tj = -55 °C Tj = -55 °C 40 38 39 0 2 4 6 8 ID (A) 10 IGD(CL) = −2 mA 36 -3 -1 IGD(CL) (mA) 0 ID = 10 A Fig 17. Drain-source clamping voltage as a function of drain current; typical values Fig 18. Drain-source clamping voltage as a function of gate-drain clamping current; typical values BUK7L3R3-34BRC_2 Product data sheet -2 © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 10 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C E A p A1 mounting base q D1 q1 D q2 L1 L Q b1 1 2 3 b c e e1 H 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e e1 H L L1 p Q q q1 q2 mm 4.58 4.31 1.33 1.21 0.87 0.76 1.33 1.21 0.44 0.33 15.07 14.80 6.47 6.22 10.40 10.00 2.64 2.44 5.16 5.00 6.03 5.76 14.00 13.50 6.10 5.58 3.90 3.78 2.72 2.40 2.95 2.69 3.80 3.42 12.40 12.00 Notes 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78C REFERENCES IEC JEDEC JEITA 3-lead TO-220 EUROPEAN PROJECTION ISSUE DATE 01-12-11 03-01-21 Fig 19. Package outline SOT78C (TO-220) BUK7L3R3-34BRC_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 11 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7L3R3-34BRC_2 20070926 Product data sheet - BUK7L3R3-34BRC_1 Modifications: BUK7L3R3-34BRC_1 • • Table 5: updated maximum value of drain leakage current Table 5: added Table note 1 20070515 Product data sheet - BUK7L3R3-34BRC_2 Product data sheet - © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 12 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BUK7L3R3-34BRC_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 26 September 2007 13 of 14 BUK7L3R3-34BRC NXP Semiconductors N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 September 2007 Document identifier: BUK7L3R3-34BRC_2