PHILIPS TEA1098AH

INTEGRATED CIRCUITS
DATA SHEET
TEA1098A
Speech and handsfree IC
Preliminary specification
File under Integrated Circuits, IC03
2000 Mar 21
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
• Duplex controller consisting of:
FEATURES
– signal and noise envelope monitors for both channels
(with adjustable sensitivities and timing)
Line interface
• Low DC line voltage
• Voltage regulator with adjustable DC voltage
– decision logic (with adjustable switch-over and Idle
mode timing)
• Symmetrical high impedance inputs (70 kΩ) for
dynamic, magnetic or electret microphones
– voice switch control (with adjustable switching range
and constant sum of gain during switching).
• DTMF input with confidence tone on earphone and/or
loudspeaker
APPLICATIONS
• Earphone amplifier for dynamic, magnetic or
piezo-electric earpieces (with externally adjustable gain)
• Line powered telephone sets.
• Digital volume control on earphone amplifier (4 steps)
GENERAL DESCRIPTION
• Automatic Gain Control (AGC) for true line loss
compensation
The TEA1098A is an analog bipolar circuit dedicated for
telephony applications. It includes a line interface, handset
(HS) microphone and earpiece amplifiers, handsfree (HF)
microphone and loudspeaker amplifiers and a duplex
controller with signal and noise monitors on both channels.
Digital volume control is available both on earphone and
loudspeaker amplifiers.
• Microphone mute
• Key tone mode.
Supplies
• Provides a strong 3.35 V regulated supply for
microcontroller or dialler
This IC provides a 3.35 V strong supply for a
microcontroller and a 2.0 V filtered voltage supply for an
electret microphone.
• Provides filtered power supply, optimized according to
line current
• Filtered 2.0 V power supply output for electret
microphone
• PD logic input for power-down.
Handsfree
• Asymmetrical high input impedance for electret
microphone
• Loudspeaker amplifier with single-ended rail-to-rail
output and externally adjustable gain
• Dynamic limiter on loudspeaker amplifier to prevent
distortion
• Digital volume control on loudspeaker amplifier (8 steps)
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TEA1098ATV
VSO40
plastic very small outline package; 40 leads
SOT158-1
TEA1098AH
QFP44
plastic quad flat package; 44 leads (lead length 1.3 mm);
body 10 × 10× 1.75 mm
SOT307-2
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
QUICK REFERENCE DATA
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
MUTE = HIGH; BPC = HIGH; measured according to test circuits; unless otherwise specified.
SYMBOL
Iline
PARAMETER
line current operating range
CONDITIONS
MIN.
TYP.
MAX.
UNIT
normal operation
11
−
130
mA
with reduced performance
1
−
11
mA
VSLPE
stabilized voltage between
SLPE and GND
Iline = 15 mA
3.4
3.7
4.0
V
Iline = 70 mA
5.7
6.1
6.5
V
VBB
regulated supply voltage for
internal circuitry
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
regulated supply voltage on
pin VDD
VBB > 3.35 V + 0.25 V (typ.)
3.1
3.35
3.6
V
otherwise
−
VBB − 0.25
−
V
in speech mode
−
11
−
mA
in handsfree mode
−
9
−
mA
VDD
IBB
current available on pin VBB
IBB(PD)
current consumption on VBB
during power-down phase
PD = LOW
−
460
−
µA
Gv(MIC-LN)
voltage gain from pin
MIC+/MIC− to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 15 mV (RMS);
HFC = HIGH
28.7
29.7
30.7
dB
∆Gv(RECO-EARO)
gain voltage range between
pins RECO and EARO
−3
−
+15
dB
Gv(TXI-TXO)
voltage gain from pin TXI to
TXO
VTXI = 3 mV (RMS);
RGATX = 30.1 kΩ
12.7
15.2
17.7
dB
Gv(HFTX-LN)
voltage gain from pin HFTX
to LN
VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
Gv(HFRX-LSAO)
voltage gain from pin HFRX
to LSAO
VHFRX = 30 mV (RMS);
RGALS = 255 kΩ;
Iline = 70 mA
25.5
28
30.5
dB
SWR
switching range
−
40
−
dB
∆SWR
switching range adjustment
with RSWR referenced to
365 kΩ
−40
−
+12
dB
∆Gv(trx)
gain control range for
transmit and receive
amplifiers affected by the
AGC; with respect to
Iline = 15 mA
Iline = 70 mA
5.45
6.45
7.45
dB
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
BLOCK DIAGRAM
handbook, full pagewidth
LN 19 (15)
REG
SLPE
20
(16)
18
(14)
STARTER
(10) 14 VBB
R1
(19) 23 VDD
LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR
AGC 22 (18)
GND 17 (13)
SWITCH
AGC
SUPPLY
MANAGEMENT
POWER-DOWN
CURRENT SOURCES
(20) 24 MICS
(38) 1 PD
tail currents for preamps
(37) 40 HFC
HFTX 39 (36)
TEA1098A
DTMF 35 (32)
LOGIC
INPUTS
DECODING
(39) 2 MUTE
(40) 3 BPC
ATTENUATOR
MIC+ 34 (31)
MIC− 33 (30)
(27) 30 GATX
(26) 29 TXO
(29) 32 GNDTX
TXI 31 (28)
(24) 27 SWT
(25) 28 IDT
TSEN 9 (4)
TENV 8 (3)
TNOI 7 (2)
RNOI 10 (5)
RENV 12 (7)
TX AND RX
ENVELOPE AND NOISE
DETECTORS
BUFFERS
AND
COMPARATORS
(21) 25 STAB
DUCO LOGIC
SWT STATUS
VOICE
SWITCH
(22) 26 SWR
RSEN 11 (6)
VOLUME
CONTROL
GALS 15 (11)
(41) 4 EVCI
(42) 5 LVCI
(1) 6 HFRX
LSAO 16 (12)
DLC 13 (8)
DYNAMIC
LIMITER
(17) 21 IR
RECO 38 (35)
ATTENUATOR
GARX 37 (34)
EARO 36 (33)
FCA140
Fig.1 Block diagram.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
PINNING
PIN
SYMBOL
DESCRIPTION
TEA1098ATV
TEA1098AH
PD
1
38
power-down input (active LOW)
MUTE
2
39
logic input (active LOW)
BPC
3
40
logic input (active LOW)
EVCI
4
41
logic input for digital volume control (earpiece and loudspeaker LSB)
LVCI
5
42
logic input for digital volume control (loudspeaker MSB)
n.c.
−
43
not connected
n.c.
−
44
not connected
HFRX
6
1
receive input for loudspeaker amplifier
TNOI
7
2
transmit noise envelope timing adjustment
TENV
8
3
transmit signal envelope timing adjustment
TSEN
9
4
transmit signal envelope sensitivity adjustment
RNOI
10
5
receive noise envelope timing adjustment
RSEN
11
6
receive signal envelope sensitivity adjustment
RENV
12
7
receive signal envelope timing adjustment
DLC
13
8
dynamic limiter capacitor for the loudspeaker amplifier
n.c.
−
9
not connected
VBB
14
10
stabilized supply for internal circuitry
GALS
15
11
loudspeaker amplifier gain adjustment
LSAO
16
12
loudspeaker amplifier output
GND
17
13
ground reference
SLPE
18
14
line current sense
LN
19
15
positive line terminal
REG
20
16
line voltage regulator decoupling
IR
21
17
receive amplifier input
AGC
22
18
automatic gain control/line loss compensation
VDD
23
19
3.35 V regulated voltage supply for microcontrollers
MICS
24
20
microphone supply
STAB
25
21
reference current adjustment
SWR
26
22
switching range adjustment
n.c.
−
23
not connected
SWT
27
24
switch-over timing adjustment
IDT
28
25
Idle mode timing adjustment
TXO
29
26
handsfree microphone amplifier output
GATX
30
27
handsfree microphone amplifier gain adjustment
TXI
31
28
handsfree microphone amplifier input
GNDTX
32
29
ground reference for microphone amplifiers
MIC−
33
30
negative handset microphone amplifier input
MIC+
34
31
positive handset microphone amplifier input
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
PIN
SYMBOL
DESCRIPTION
TEA1098ATV
TEA1098AH
DTMF
35
32
dual tone multi-frequency input
EARO
36
33
earpiece amplifier output
GARX
37
34
earpiece amplifier gain adjustment
RECO
38
35
receive amplifier output
HFTX
39
36
transmit input for line amplifier
HFC
40
37
logic input
handbook, halfpage
40 HFC
PD 1
MUTE 2
39 HFTX
BPC 3
38 RECO
EVCI 4
37 GARX
LVCI 5
36 EARO
HFRX 6
35 DTMF
TNOI 7
34 MIC+
TENV 8
33 MIC−
TSEN 9
32 GNDTX
RNOI 10
31 TXI
TEA1098ATV
RSEN 11
30 GATX
RENV 12
29 TXO
DLC 13
28 IDT
VBB 14
27 SWT
GALS 15
26 SWR
LSAO 16
25 STAB
GND 17
24 MICS
SLPE 18
23 VDD
LN 19
22 AGC
REG 20
21 IR
FCA141
Fig.2 Pin configuration (TEA1098ATV).
2000 Mar 21
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Philips Semiconductors
Preliminary specification
34 GARX
35 RECO
36 HFTX
37 HFC
38 PD
39 MUTE
40 BPC
43 n.c.
44 n.c.
handbook, full pagewidth
41 EVCI
TEA1098A
42 LVCI
Speech and handsfree IC
HFRX 1
33 EARO
TNOI 2
32 DTMF
TENV 3
31 MIC+
TSEN 4
30 MIC−
RNOI 5
29 GNDTX
RSEN 6
28 TXI
TEA1098AH
27 GATX
RENV 7
DLC 8
26 TXO
n.c. 9
25 IDT
VBB 10
24 SWT
23 n.c.
SWR 22
STAB 21
MICS 20
VDD 19
AGC 18
IR 17
REG 16
LN 15
SLPE 14
GND 13
LSAO 12
GALS 11
FCA142
Fig.3 Pin configuration (TEA1098AH).
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except
when otherwise specified.
This capacitor converted into an equivalent inductance
realizes the set impedance conversion from its DC value
(RSLPE) to its AC value (done by an external impedance).
Supplies
The IC regulates the line voltage at pin LN and can be
calculated as follows:
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,
REG AND VBB)
V LN = V ref + R SLPE × I SLPE
The supply for the TEA1098A and its peripherals is
obtained from the line. The IC generates a stabilized
reference voltage (Vref) between pins SLPE and GND.
I SLPE = I line – I
where:
Iline = line current
This reference voltage is equal to 3.7 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 6.1 V for line currents
higher than 45 mA. For line currents below 9 mA, the
internal reference voltage generating Vref is automatically
adjusted to a lower value. This is the so-called low voltage
area and the TEA1098A has limited performances in this
area (see Section “Low voltage behaviour”). This
reference voltage is temperature compensated.
Ix = current consumed on pin LN (approximately a few µA)
ISLPE = current flowing through the RSLPE resistor
The preferred value for RSLPE is 20 Ω. Changing this value
will affect more than the DC characteristics; it also
influences the transmit gains to the line, the gain control
characteristic, the sidetone level and the maximum output
swing on the line.
The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltage and is decoupled by means of a capacitor between
pins LN and REG.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
LN
handbook, full pagewidth
TR2
RSLPE
GND
20 Ω
TR1
SLPE
CREG
4.7 µF
VBB
E2
E1
TP1
D1
J1
R3
D1
REG
R1
TN2
R2
from
preamp
J2
TN1
GND
GND
MGM298
Fig.4 Line interface principle.
As can be seen from Fig.4, the internal circuitry is supplied
by pin VBB, which is a strong supply point combined with
the line interface. The line current is flowing through the
RSLPE resistor and is sunk by the VBB voltage stabilizer,
thus becoming available for a loudspeaker amplifier or any
peripheral IC. Its voltage is equal to 3.0 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 5.3 V for line currents
greater than 45 mA. It is temperature compensated.
The reference voltage Vref can be increased by connecting
an external resistor between pins REG and SLPE. For
large line currents, this increase can slightly affect some
dynamic performances such as maximum signal level on
the line for 2% THD. The voltage on pin VBB is not affected
by this external resistor; see Fig.5 for the main DC
voltages.
The aim of the current switch TR1 and TR2 is to reduce
distortion of large AC line signals. Current ISLPE is supplied
to VBB via TR1 when the voltage on SLPE is greater than
VBB + 0.25 V. When the voltage on SLPE is lower than this
value, the current ISLPE is shunted to GND via TR2.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
MGL439
8
handbook, full pagewidth
LN
Voltages
(V)
SLPE
6
VBB
4
VDD
MICS
2
0
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Line current (A)
Fig.5 Main DC voltages.
VDD SUPPLY FOR MICROCONTROLLER (PIN VDD)
The voltage on the VDD supply point follows the voltage on VBB with a difference typically equal to 250 mV and is internally
limited to 3.35 V. This voltage is temperature compensated. This supply point can provide a current up to 3 mA typically.
Its internal consumption stays low (a few 10 nA) as long as VDD does not exceed 1.5 V.
VDD can also be used as an input; in this case the voltage will be stabilised to 3.35 V up to 75 mA input current.
VBB and VDD can supply external circuits in the limit of currents provided from the line, taking into account the internal
current consumption.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
MGL438
100.0u
handbook, full pagewidth
IDD (A)
10.0u
1.0u
100.0n
10.0n
1.0n
100.0p
10.0p
1.0
1.5
2.0
2.5
VDD (V)
3.0
Fig.6 Current consumption on VDD.
SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX)
When VBB goes below 2.5 V, the TEA1098A is forced into
a low voltage mode whatever the levels on the logic inputs
are. It is a speech mode with reduced performances only
enabling the microphone channel (between the MIC inputs
and LN) and the earpiece amplifier. These two channels
are able to deliver signals for line currents as small as
3 mA. The HFC input is tied to GND sinking a current
typically equal to 300 µA.
The MICS output can be used as a supply for an electret
microphone. Its voltage is equal to 2.0 V; it can source a
current up to 1 mA and has an output impedance equal to
200 Ω.
LOW VOLTAGE BEHAVIOUR
For line currents below 9 mA, the reference voltage is
automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with 250 mV difference. The
excess current available for other purposes than DC
biasing of the IC becomes small. In this low voltage area,
the IC has limited performances.
POWER-DOWN MODE (PIN PD)
To reduce consumption during dialling or register recall
(flash), the TEA1098A is provided with a power-down input
(PD). When the voltage on pin PD is LOW, the current
consumption from VBB and VDD is reduced to 460 µA
typically. Therefore a capacitor of 470 µF on VBB is
sufficient to power the TEA1098A during pulse dialling or
flash. The PD input has a pull-up structure. In this mode,
the capacitor CREG is internally disconnected.
When the VBB voltage becomes lower than 2.7 V, the VBB
detector of the receive dynamic limiter on pin LSAO acts
continuously, discharging the capacitor connected to
pin DLC. In the DC condition, the loudspeaker is then
automatically disabled below this voltage.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
Transmit channels (pins MIC+, MIC−, DTMF, HFTX
and LN)
Receive channels (pins IR, RECO, GARX, EARO
and EVCI)
HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC−
AND LN)
RX AMPLIFIER (PINS IR, RECO AND EVCI)
The receive amplifier has one input IR which is referred to
the line. The input impedance between pins IR and LN is
typically 20 kΩ and the DC biasing between these pins is
equal to one diode voltage.
The TEA1098A has symmetrical microphone inputs. The
input impedance between pins MIC+ and MIC− is typically
70 kΩ. The voltage gain between pins MIC+/MIC− and LN
is set to 44.3 dB. Without limitation from the output, the
microphone input stage can accommodate signals up to
18 mV (RMS) at room temperature for 2% of Total
Harmonic Distortion (THD). The microphone inputs are
biased at one diode voltage.
When HFC = 0, the gain between pins IR (referred to LN)
and RECO is typically 17.0 dB which compensates
typically 15 dB lower than attenuation of the anti-sidetone
network. The receive amplifier gain can be digitally
increased with the 4-level logic input EVCI, providing
4 steps of 4.85 dB which apply in all handset receive
modes. Without limitation from the output, the input stage
can accommodate signals up to 50 mV (RMS) at room
temperature for 2% of THD.
Automatic gain control is provided for line loss
compensation.
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
The TEA1098A has an asymmetrical DTMF input. The
input impedance between pins DTMF and GND is typically
20 kΩ. The voltage gain between pins DTMF and LN is set
to 25.35 dB. Without limitation from the output, the input
stage can accommodate signals up to 180 mV (RMS) at
room temperature for 2% of THD.
When HFC = 1, the gain is set automatically to 29.7 dB
which compensate the anti-sidetone network attenuation
minus 2.3 dB.
This receive amplifier has a rail-to-rail output RECO, which
is designed for use with high ohmic (real) loads (larger
than 5 kΩ). This output is biased at two diodes voltage.
When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker at a low level. This is called
the confidence tone. The voltage attenuation between pins
DTMF and RECO is typically −16.5 dB in handsfree mode
(HFC HIGH), and −28.2 dB in handset mode (HFC LOW).
Automatic gain control is provided for line loss
compensation.
EARPIECE AMPLIFIER (PINS GARX AND EARO)
The earpiece amplifier is an operational amplifier having
its output (EARO) and its inverting input (GARX) available.
Its input signal comes, via a decoupling capacitor, from the
receive output RECO. It is used in combination with two
resistors to get the required gain or attenuation compared
to the receive gain. The typical resistor ratio is 4, which
gives a 12 dB gain. The gain range can be chosen
between 0 dB and 20 dB.
The DC biasing of this input is 0 V.
The automatic gain control has no effect on these
channels.
HANDSFREE TRANSMIT AMPLIFIER (PINS
HFTX AND LN)
The TEA1098A has an asymmetrical HFTX input, which is
mainly intended for use in combination with the TXO
output. The input impedance between pins HFTX and
GND is typically 20 kΩ. The voltage gain between pins
HFTX and LN is set to 34.7 dB. Without limitation from the
output, the input stage can accommodate signals up to
95 mV (RMS) at room temperature for 2% of THD. The
HFTX input is biased at two diodes voltage.
Two external capacitors CGAR (connected between pins
GAR and EARO) and CGARS (connected between pins
GAR and GND) ensure stability. The CGAR capacitor
provides a first-order low-pass filter. The cut-off frequency
corresponds to the time constant CGAR × RE2. The
relationship CGARS > = 10 × CGAR must be fulfilled.
The earpiece amplifier has a rail-to-rail output EARO,
biased at two diodes voltage. It is designed for use with low
ohmic (real) loads (150 Ω) or capacitive loads (100 nF in
series with 100 Ω).
Automatic gain control is provided for line loss
compensation.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
This is achieved by the duplex controller. The duplex
controller of the TEA1098A detects which channel has the
‘largest’ signal and then controls the gains of the
microphone and loudspeaker amplifiers so that the sum of
the gains remains constant.
AGC (pin AGC)
The TEA1098A performs automatic line loss
compensation, which fits well with the true line attenuation.
The automatic gain control varies the gain of some
transmit and receive amplifiers in accordance with the DC
line current. The control range is 6.45 dB for Gv(MIC-LN) and
Gv(IR-RECO) and 6.8 dB for Gv(HFTX-LN), which corresponds
approximately to a line length of 5.5 km for a 0.5 mm
twisted-pair copper cable.
As a result, in handsfree application, the circuit can be in
three stable modes:
1. Transmit mode (TX mode).
The gain of the microphone amplifier is at its maximum
and the gain of the loudspeaker amplifier is at its
minimum.
To enable this gain control, pin AGC must be shorted to
pin LN. The start current for compensation corresponds to
a line current of typically 23 mA and the stop current to
57 mA. The start current can be increased by connecting
an external resistor between pins AGC and LN. It can be
increased up to 40 mA (using a resistor typically 80 kΩ).
The start and stop current will be maintained in a ratio
equal to 2.5. By leaving the AGC pin open-circuit, the gain
control is disabled and no line loss compensation is
performed.
2. Receive mode (RX mode).
The gain of the loudspeaker amplifier is at its
maximum and the gain of the microphone amplifier is
at its minimum.
3. Idle mode.
The gain of the amplifiers is halfway between their
maximum and minimum value.
The difference between the maximum gain and minimum
gain is called the switching range.
Handsfree application
As can be seen from Fig.4, a loop is formed via the
sidetone network in the line interface part and the acoustic
coupling between loudspeaker and microphone of the
handsfree part. When this loop gain is greater than 1,
howling occurs. In a full duplex application this would be
the case. The loop-gain has to be much lower than 1 and
therefore has to be decreased to avoid howling.
handbook, full pagewidth
acoustic
coupling
telephone
line
DUPLEX
CONTROL
HYBRID
sidetone
MGM299
Fig.7 Handsfree telephone set principles.
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
HANDSFREE MICROPHONE CHANNEL (PINS
TEA1098A
TXI, GATX, TXO AND GNDTX; SEE Fig.8)
The TEA1098A has an asymmetrical handsfree microphone input (pin TXI) with an input resistance of 20 kΩ. The DC
biasing of the input is 0 V. The gain of the input stage varies according to the mode of the TEA1098A. In the transmit
mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the Idle mode, it is halfway between
maximum and minimum.
handbook, full pagewidth
VBB
(27) 30 GATX
RGATX
R MIC
CMIC
TXI 31 (28)
V
to
envelope
detector
I
I
(26) 29 TXO
V
(29) 32 GNDTX
from
voice
switch
FCA150
Fig.8 Handsfree microphone channel
Switch-over from one mode to the other is smooth and click-free. The output TXO is biased at two diodes voltage and
has a current capability equal to 20 µA (RMS). In the transmit mode, the overall gain of the microphone amplifier (from
pins TXI to TXO) can be adjusted from 0 dB up to 31 dB to suit specific application requirements. The gain is proportional
to the value of RGATX and equals 15.2 dB with RGATX = 30.1 kΩ. Without limitation from the output, the microphone input
stage can accommodate signals up to 18 mV (RMS) at room temperature for 2% of THD.
LOUDSPEAKER CHANNEL
handbook, full pagewidth
to
logic
RGALS
GALS 15 (11)
CGALS
LSAO 16 (12)
to/from
voice switch
to
envelope
detector
VBB
V
I
I
V
6 (1) HFRX
CLSAO
5 (42) LVCI
DLC 13 (8)
DYNAMIC
LIMITER
VOLUME
CONTROL
CDLC
4 (41) EVCI
FCA151
Fig.9 Loudspeaker channel.
2000 Mar 21
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Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
Loudspeaker amplifier (pins HFRX, GALS and LSAO)
When the supply voltage drops below an internal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.7 V, the gain of the loudspeaker
amplifier is increased again.
The TEA1098A has an asymmetrical input for the
loudspeaker amplifier with an input resistance of 20 kΩ
between pins HFRX and GND. It is biased at two diodes
voltage. Without limitation from the output, the input stage
can accommodate signals up to 580 mV (RMS) at room
temperature for 2% of THD.
By forcing a level lower than 0.2 V on pin DLC, the
loudspeaker amplifier is muted and the TEA1098A is
automatically forced into the transmit mode.
The gain of the input stage varies according to the mode
of the TEA1098A. In the receive mode, the gain is at its
maximum; in the transmit mode, it is at its minimum and in
the Idle mode, it is halfway between maximum and
minimum. Switch-over from one mode to the other is
smooth and click-free. The rail-to-rail output stage is
designed to power a loudspeaker connected as a
single-ended load (between pins LSAO and GND).
DUPLEX CONTROLLER
Signal and noise envelope detectors (pins TSEN, TENV,
TNOI, RSEN, RENV and RNOI)
The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelope detectors are illustrated in
Fig.10.
In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 0 dB up to 35 dB to suit
specific application requirements. The gain from HFRX to
LSAO is proportional to the value of RGALS and equals
28 dB with RGALS = 255 kΩ. A capacitor connected in
parallel with RGALS is recommended and provides a
first-order low-pass filter.
For the transmit channel, the input signal at pin TXI is
40 dB amplified to TSEN. For the receive channel, the
input signal at pin HFRX is 0 dB amplified to RSEN. The
signals from TSEN and RSEN are logarithmically
compressed and buffered to TENV and RENV
respectively.
Digital volume control (pins LVCI and EVCI)
The loudspeaker amplifier gain can be adjusted
(attenuated) with the LVCI logic input (as MSB) and the
4-level input EVCI (as LSBs). This combination provides
8 steps of −4 dB which applies in all handsfree receive
modes.
The sensitivity of the envelope detectors is set with RTSEN
and RRSEN. The capacitors connected in series with the
two resistors block any DC component and form a
first-order high-pass filter. In the basic application
(see Fig.18) it is assumed that VTXI = 1 mV (RMS) and
VHFRX = 100 mV (RMS) nominal and both RTSEN and
RRSEN have a value of 10 kΩ. With the value of CTSEN and
CRSEN at 100 nF, the cut-off frequency is at 160 Hz.
Dynamic limiter (pin DLC)
The dynamic limiter of the TEA1098A prevents clipping of
the loudspeaker output stage and protects the operation of
the circuit when the supply voltage at VBB falls below 2.7 V.
The buffer amplifiers feeding the compressed signals to
pins TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Capacitors
CTENV and CRENV set the timing of the signal envelope
monitors. In the basic application, the value of both
capacitors is 470 nF. Because of the logarithmic
compression, each 6 dB signal increase means 18 mV
increase of the voltage on the envelopes TENV or RENV
at room temperature. Thus, timings can be expressed in
dB/ms. At room temperature, the 120 µA sourced current
corresponds to a maximum rise-slope of the signal
envelope of 85 dB/ms. This is sufficient to track normal
speech signals. The 1 µA current sunk by TENV or RENV
corresponds to a maximum fall-slope of 0.7 dB/ms. This is
sufficient for a smooth envelope and also eliminates the
effect of echoes on switching behaviour.
Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signals no longer cause saturation. The
gain of the loudspeaker amplifier then returns to its normal
value within the clipping release time (typically 250 ms).
Both attack and release times are proportional to the value
of the capacitor CDLC. The total harmonic distortion of the
loudspeaker output stage, in reduced gain mode, stays
below 2% up to 10 dB (minimum) of input voltage
overdrive [providing VHFRX is below 580 mV (RMS)].
2000 Mar 21
14
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
handbook, full pagewidth
DUPLEX CONTROLLER
to logic
to logic
LOG
LOG
from
microphone
amplifier
from
loudspeaker
amplifier
9 (4)
8 (3)
7 (2)
11 (6)
12 (7)
10 (5)
TSEN
TENV
TNOI
RSEN
RENV
RNOI
RTSEN
RRSEN
CTSEN
CTENV
CTNOI
CRSEN
CRENV
CRNOI
FCA152
Fig.10 Signal and noise envelope detectors.
4 mV (RMS)
handbook, full pagewidth
MBG354
1 mV (RMS)
INPUT SIGNAL
SIGNAL ENVELOPE
A
A
B
36 mV
B
A: 85 dB/ms
B: 0.7 dB/ms
NOISE ENVELOPE
C
B: 0.7 dB/ms
C: 0.07 dB/ms
B
36 mV
C
B
time
Fig.11 Signal and noise envelope waveforms.
To determine the noise level, the signals on pins TENV
and RENV are buffered to pins TNOI and RNOI. These
buffers have a maximum source current of 1 µA and a
maximum sink current of 120 µA. Capacitors CTNOI and
CRNOI set the timing. In the basic application, see Fig.18,
the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms.
2000 Mar 21
This is small enough to track background noise and not to
be influenced by speech bursts. The 120 µA current that is
sunk corresponds to a maximum fall-slope of
approximately 8.5 dB/ms. However, during the decrease
of the signal envelope, the noise envelope tracks the
signal envelope so it will never fall faster than
approximately 0.7 dB/ms. The behaviour of the signal
envelope and noise envelope monitors is illustrated in
Fig.11.
15
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
Decision logic (pins IDT and SWT)
handbook, full pagewidth
(25) 28 IDT
DUPLEX CONTROLLER
Vref
LOGIC(1)
TENV 8 (3)
RIDT
TNOI 7 (2)
13 mV
(24) 27 SWT
ATTENUATOR
CSWT
RENV 12 (7)
RNOI 10 (5)
X
X
1
1
−10 µA
X
1
0
X
+10 µA
1
X
0
X
+10 µA
X
X
1
0
0
0
0
0
X
0
13 mV
Vdt
from logic
from dynamic
limiter
FCA153
(1) When DLC < 0.2 V, −10 µA is forced.
Fig.12 Decision logic.
The TEA1098A selects its mode of operation (transmit,
receive or Idle mode) by comparing the signal and the
noise envelopes of both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice-switch.
As a result, the signal envelope on pin TENV is formed
mainly by the loudspeaker signal. To correct this, an
attenuator is connected between pin TENV and the
TENV/RENV comparator. Its attenuation equals that
applied to the microphone amplifier.
To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
VENV − VNOI = 13 mV. This so-called speech/noise
threshold is implemented in both channels.
When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1098A to go into the Idle mode and the user of the set
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
applications, does not consider input signals between
HFRX and GND as noise when they have a level greater
than 25 mV (RMS). This level is proportional to RRSEN.
The signal on pin TXI contains both speech and the signal
from the loudspeaker (acoustic coupling). When receiving,
the contribution from the loudspeaker overrules the
speech.
2000 Mar 21
16
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
In the same way, a transmit detector is integrated which, in
standard applications, does not consider input signals
between pins TXI and GNDTX as noise when they have a
level greater than 0.75 mV (RMS). This level is
proportional to RTSEN.
In the transmit mode, the gain of the microphone amplifier
is at its maximum and the gain of the loudspeaker amplifier
is at its minimum. In the receive mode, the opposite
applies. In the Idle mode, both microphone and
loudspeaker amplifier gains are halfway.
As can be seen from Fig.12, the output of the decision
logic is a current source. The logic table gives the
relationship between the inputs and the value of the
current source. It can charge or discharge the capacitor
CSWT with a current of 10 µA (switch-over). If the current is
zero, the voltage on pin SWT becomes equal to the
voltage on pin IDT via the high-ohmic resistor RIDT (idling).
The resulting voltage difference between pins SWT and
IDT determines the mode of the TEA1098A and can vary
between −400 and +400 mV (see Table 1).
The difference between maximum and minimum is the so
called switching range. This range is determined by the
ratio of RSWR and RSTAB and is adjustable between
0 and 52 dB. RSTAB should be 3.65 kΩ and sets an
internally used reference current. In the basic application
diagram given in Fig.18, RSWR is 365 kΩ which results in a
switching range of 40 dB. The switch-over behaviour is
illustrated in Fig.14.
In the receive mode, the gain of the loudspeaker amplifier
can be reduced using the volume control. Since the
voice-switch keeps the sum of the gains constant, the gain
of the microphone amplifier is increased at the same time
(see dashed curves in Fig.14). In the transmit mode,
however, the volume control has no influence on the gain
of the microphone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.
Table 1 Modes of TEA1098A
VSWT − VIDT (mV)
<−180
MODE
transmit mode
0
Idle mode
>180
receive mode
The switch-over timing can be set with CSWT, the Idle
mode timing with CSWT and RIDT. In the basic application
given in Fig.18, CSWT is 220 nF and RIDT is 2.2 MΩ. This
enables a switch-over time from transmit to receive mode
or vice-versa of approximately 13 ms (580 mV swing on
pin SWT). The switch-over time from Idle mode to transmit
mode or receive mode is approximately 4 ms (180 mV
swing on pin SWT).
DUPLEX CONTROLLER
to
microphone
amplifier
The switch-over time, from receive mode or transmit mode
to Idle mode is equal to 4 × RIDTCSWT and is approximately
2 seconds (Idle mode time).
Gvtx + Gvrx = C(1)
VOICE SWITCH
The input at pin DLC overrules the decision logic. When
the voltage on pin DLC goes lower than 0.2 V, the
capacitor CSWT is discharged with 10 µA thus resulting in
the transmit mode.
from
volume
control
25 (21) STAB
RSTAB
26 (22) SWR
RSWR
to
loudspeaker
amplifier
FCA154
Voice-switch (pins STAB and SWR)
(1) C = constant.
A diagram of the voice-switch is illustrated in Fig.13. With
the voltage on pin SWT, the TEA1098A voice-switch
regulates the gains of the transmit and the receive
channels so that the sum of both is kept constant.
2000 Mar 21
from
SWT
Fig.13 Voice switch.
17
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
Idle
mode
handbook, full pagewidth
Tx mode
G vtx, G vrx
(10 dB/div)
FCA155
Rx mode
G vtx
+24 dB
+16 dB
+8 dB
Gvtx(min)
Gvrx(max)
−8 dB
−16 dB
−24 dB
G vrx
−400
−200
0
+200
+400
VSWT − VIDT (mV)
Fig.14 Switch-over behaviour.
Logic inputs
The actions of the logic inputs BPC and MUTE, combined with the HFC input are detailed in the Table 2.
Table 2
Table of switch management
LOGIC INPUTS
FEATURES
APPLICATION
HFC
MUTE
BPC
0
0
0
DTMF to RECO; RECO to EARO;
MICS is active
handset beep mode
0
0
1
DTMF to LN; DTMF to RECO;
RECO to EARO; MICS is active
handset dialling mode
0
1
0
IR to RECO; RECO to EARO;
MICS is active
handset secret mode
0
1
1
MIC to LN; IR to RECO; RECO to EARO;
MICS is active
handset conversation mode
1
0
0
DTMF to RECO; HFRX to LSAO;
MICS is active
handsfree beep mode
1
0
1
DTMF to LN; DTMF to RECO;
HFRX to LSAO; MICS is active
handsfree dialling mode
1
1
0
IR to RECO; HFRX to LSAO;
MICS is active
handsfree secret mode
1
1
1
TXI to TXO; HFTX to LN;
IR to RECO; HFRX to LSAO;
MICS is active
handsfree conversation mode
2000 Mar 21
18
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
positive continuous line voltage
−0.4
12
V
repetitive line voltage during switch-on or line
interruption
−0.4
13.2
V
Vn(max)
maximum voltage on pins REG, SLPE, IR and AGC
−0.4
VLN + 0.4
V
maximum voltage on all other pins except VDD
−0.4
VBB + 0.4
V
Iline
maximum line current
−
130
mA
Ptot
total power dissipation
TEA1098ATV (see Fig.15)
−
400
mW
TEA1098AH (see Fig.16)
−
720
mW
VLN
Tamb = 75 °C
Tstg
IC storage temperature
−40
+125
°C
Tamb
ambient temperature
−25
+75
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
2000 Mar 21
PARAMETER
CONDITIONS
VALUE
UNIT
TEA1098ATV
117
K/W
TEA1098AH
66
K/W
thermal resistance from junction to ambient
19
in free air
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
FCA177
160
handbook, full pagewidth
Iline
(mA)
120
(1)
(2)
(3)
80
(4)
(5)
(6)
40
0
2
4
6
10
8
20
12
LINE
Tamb (°C)
Ptot (mW)
(1)
25
790
(2)
35
710
(3)
45
630
(4)
55
550
(5)
65
470
(6)
75
390
Fig.15 Safe operating area (TEA1098ATV)
2000 Mar 21
VSLPE (V)
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
FCA178
160
handbook, full pagewidth
Iline
(mA)
(1)
(2)
(3)
120
(4)
(5)
80
(6)
40
0
2
4
6
8
10
21
12
LINE
Tamb (°C)
Ptot (mW)
(1)
25
1290
(2)
35
1250
(3)
45
1110
(4)
55
975
(5)
65
835
(6)
75
695
Fig.16 Safe operating area (TEA1098AH).
2000 Mar 21
VSLPE (V)
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
CHARACTERISTICS
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
MUTE = HIGH; BPC = HIGH; all DC levels are referenced to GND; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB)
VSLPE
stabilized voltage
between SLPE and
GND
Iline = 15 mA
3.4
3.7
4
V
Iline = 70 mA
5.7
6.1
6.5
V
VREF
RVA = 40 kΩ
stabilized voltage with
an external resistor RVA
between REG and
SLPE
−
4.5
−
V
∆VREF(T)
stabilized voltage
Tamb = −25 to +75 °C
variation with
temperature referenced
to 25 °C
−
±60
−
mV
VLN
line voltage
Iline = 1 mA
−
1.55
−
V
Iline = 4 mA
−
2.35
−
V
VBB
Iline
regulated supply
voltage for internal
circuitry
line current for voltage
increase
Iline = 15 mA
3.7
4.0
4.3
V
Iline = 130 mA
−
8.7
9.3
V
Iline = 15 mA; IVBB = 0
2.75
3.0
3.25
V
Iline = 70 mA; IVBB = 0
4.9
5.3
5.7
V
start current
−
18
−
mA
stop current
−
45
−
mA
∆VBB(T)
regulated voltage
Tamb = −25 to +75 °C
variation with
temperature referenced
to 25 °C
−
±30
−
mV
IBB
current available on pin
VBB
in speech mode
−
11
−
mA
in handsfree mode
−
9
−
mA
VBB > 3.35 V + 0.25 V (typ.)
3.1
3.35
3.6
V
otherwise
−
VBB − 0.25 −
V
SUPPLY FOR PERIPHERALS (PIN VDD)
VDD
supply output voltage
∆VDD(T)
regulated voltage
Tamb = −25 to +75 °C;
variation with
VBB > 3.35 V + 0.25 V (typ.)
temperature referenced
to 25 °C
−
±30
−
mV
IDD
current consumption on in trickle mode; Iline = 0 mA;
VDD
VDD = 1.5 V;
VBB discharging
−
15
150
nA
IVDD
current sunk from
external source
−
−
75
mA
2000 Mar 21
in ringer mode; Iline = 0;
VDD = 3.35 V
22
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
IDD(O)
PARAMETER
current available for
peripherals
TEA1098A
CONDITIONS
VDD = 3.3 V
MIN.
TYP.
MAX.
UNIT
−
−3
−
mA
−
2.0
−
V
SUPPLY FOR MICROPHONE (PIN MICS)
VMICS
supply voltage for a
microphone
POWER-DOWN INPUT (PIN PD)
VIL
LOW-level input voltage
−0.4
−
0.3
V
Ii(PD)(l)
input current at low
voltage
−
−3
−6
µA
VIH
HIGH-level input
voltage
1.4
−
VBB + 0.3
V
IBB(PD)
current consumption on PD = LOW
VBB during power-down
phase
−
460
−
µA
differential between
pins MIC+ and MIC−
−
70
−
kΩ
single-ended
between pins
MIC+/MIC− and
GNDTX
−
35
−
kΩ
Zi(IR)
input impedance
between pins IR and
LN
−
20
−
kΩ
Zi(DTMF)
input impedance
between pins DTMF
and GND
−
20
−
kΩ
Zi(TXI)
input impedance
between pins TXI and
GNDTX
−
20
−
kΩ
Zi(HFTX)
input impedance
between pins HFTX
and GND
−
20
−
kΩ
Zi(HFRX)
input impedance
between pins HFRX
and GND
−
20
−
kΩ
43.3
44.3
45.3
dB
−
±0.25
−
dB
Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXI, HFTX and HFRX)
Zi(MIC)
input impedance
TX amplifiers
TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN)
Gv(MIC-LN)
voltage gain from pin
MIC+/MIC− to LN
∆Gv(f)
gain variation with
f = 300 to 3400 Hz
frequency referenced to
1 kHz
2000 Mar 21
VMIC = 5 mV (RMS)
23
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
TEA1098A
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
∆Gv(T)
gain variation with
Tamb = −25 to +75 °C
temperature referenced
to 25 °C
−
±0.25
−
dB
CMRR
common mode
rejection ratio
−
80
−
dB
THD
total harmonic
distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
Iline = 4 mA;
VLN = 0.12 V (RMS)
−
−
10
%
Vno(LN)
noise output voltage at
pin LN; pins
MIC+/MIC− shorted
through 200 Ω
psophometrically weighted
(p53 curve)
−
−77
−
dBmp
∆Gv(mute)
gain reduction when
muted
MUTE = 0; see Table 2
60
80
−
dB
∆Gv(MIC)(mute)
gain reduction in
VMIC = 10 mV (RMS);
microphone mute mode MUTE = 1; BPC = 0;
see Table 2
60
−
−
dB
24.35
25.35
26.35
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
Gv(DTMF-LN)
voltage gain from pin
DTMF to LN
∆Gv(f)
gain variation with
f = 300 to 3400 Hz
frequency referenced to
1 kHz
−
±0.25
−
dB
∆Gv(T)
gain variation with
Tamb = −25 to +75 °C
temperature referenced
to 25 °C
−
±0.25
−
dB
∆Gv(mute)
gain reduction if not
active
MUTE = 1; see Table 2
60
80
−
dB
Gv(DTMF-RECO)
voltage gain from pin
DTMF to RECO in
handsfree mode
VDTMF = 50 mV (RMS);
MUTE = 0; HFC = 1
−
−17
−
dB
Gv(DTMF-RECO)
voltage gain from pin
DTMF to RECO in
handset mode
VDTMF = 50 mV (RMS);
MUTE = 0; HFC = 0;
EVCI = 0
−
−28.2
−
dB
∆Gv(DTMF-RECO)
digital volume control
adjustment range in
handset mode
VDTMF = 50 mV (RMS);
MUTE = 0; HFC = 0
−
−12.75
−
dB
∆Gv(DTMF-RECO)
digital volume control
adjustment step in
handset mode
MUTE = 0; HFC = 0; per
step
−
+4.25
−
dB
2000 Mar 21
VDTMF = 50 mV (RMS)
24
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
TEA1098A
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
TX AMPLIFIER USING HFTX (PINS HFTX AND LN)
Gv(HFTX-LN)
voltage gain from pin
HFTX to LN
∆Gv(f)
VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
gain variation with
f = 300 to 3400 Hz
frequency referenced to
1 kHz
−
±0.25
−
dB
∆Gv(T)
gain variation with
Tamb = −25 to +75°C
temperature referenced
to 25 °C
−
±0.35
−
dB
THD
total harmonic
distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
VHFTX(rms)
maximum input voltage
at HFTX (RMS value)
Iline = 70 mA; THD = 2%
−
85
−
mV
Vno(LN)
noise output voltage at psophometrically weighted
pin LN; pin HFTX
(p53 curve)
shorted to GND
through 200 Ω in series
with 10 µF
−
−77
−
dBmp
∆Gv(m)
gain reduction when
muted
60
80
−
dB
∆Gv(MIC)(mute)
gain reduction in
MUTE = 1; BPC = 0;
microphone mute mode see Table 2
60
−
−
dB
MUTE = 0; see Table 2
RX amplifiers
RX AMPLIFIERS USING IR (PINS IR AND RECO)
Gv(IR-RECO)(HF)
voltage gain from IR to
RECO (handsfree
mode)
VIR = 4 mV (RMS); HFC = 1
28.4
29.4
30.4
dB
Gv(IR-RECO)(HS)
voltage gain from IR to
RECO (handset mode)
VIR = 4 mV (RMS); HFC = 0; 16.2
EVCI = 0
17.2
18.2
dB
∆Gv(IR-RECO)
digital volume control
adjustment range in
handset mode
VIR = 4 mV (RMS); HFC = 0; 13
EVCI = VDD
14.5
16
dB
∆Gv(IR-RECO)
digital volume control
adjustment step in
handset mode
HFC = 0; per step
−
+4.85
−
dB
∆Gv(f)
gain variation with
frequency referred to
1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with
Tamb = −25 to +75 °C
temperature referenced
to 25 °C
−
±0.3
−
dB
VIR(rms)(max)
maximum input voltage
on IR (referenced to
LN) (RMS value)
−
50
−
mV
2000 Mar 21
Iline = 70 mA; THD = 2%
25
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
TEA1098A
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VRECO(rms)(max)
maximum output
voltage on RECO
(RMS value)
THD = 2%;
Gv(RECO-EARO) = 12 dB
0.75
0.9
−
V
Vno(RECO)(rms)
noise output voltage at
pin RECO; pin IR is an
open-circuit
(RMS value)
psophometrically weighted
(p53 curve)
−
−84
−
dBVp
∆Gv(mute)
gain reduction if not
active
MUTE = 0; see Table 2
60
80
−
dB
0
−
+20
dB
0.9
−
V
RX EARPIECE AMPLIFIER (PINS GARX AND EARO)
∆Gv(RECO-EARO)
gain voltage range
between pins RECO
and EARO
VEARO(rms)(max)
maximum output
voltage on EARO
(RMS value)
sine wave drive; RL = 150 Ω; 0.75
THD < 2%
Vno(EARO)(rms)
noise output voltage at
pin EARO; pin IR is an
open-circuit
(RMS value)
Gv(EARO) = 12 dB; EVCI = 0;
psophometrically weighted
(p53 curve)
−
−84
−
dBVp
Iline = 70 mA; Gv(MIC−LN);
Gv(IR-RECO); RAGC = 0;
5.45
6.45
7.45
dB
Iline = 70 mA for Gv(HFTX−LN);
RAGC = 0
5.8
6.8
7.8
dB
Automatic Gain Control (pin AGC)
∆Gv(trx)
gain control range for
transmit and receive
signals affected by the
AGC; with respect to
Iline = 15 mA
Istart
highest line current for
maximum gain
−
23
−
mA
Istop
lowest line current for
maximum gain
−
57
−
mA
∆Istart
Istart adjustment range
with RAGC
−
−
40
mA
Logic inputs (pins HFC, MUTE, and BPC)
VIL
LOW-level input voltage
−0.4
−
0.3
V
VIH
HIGH-level input
voltage
1.4
−
VBB + 0.3
V
Ii(l)
input current at low
voltage
for pin HFC
−
0
−
µA
for pin MUTE
−
−5
−
µA
for pin BPC
−
−2.5
−
µA
2000 Mar 21
VBB = 3.0 V
26
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
Ii(h)
PARAMETER
input current at high
voltage
TEA1098A
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VBB = 3.0 V
for pin HFC
−
2.5
−
µA
for pin MUTE
−
0
−
µA
for pin BPC
−
0
−
µA
12.7
15.2
17.7
dB
Handsfree mode (HFC = HIGH)
HF MICROPHONE AMPLIFIER (PINS TXI, TXO AND GATX)
Gv(TXI-TXO)
voltage gain from pin
TXI to TXO
VTXI = 3 mV (RMS);
RGATX = 30.1 kΩ
∆Gv
voltage gain adjustment
with RGATX
−15
−
+16
dB
∆Gv(f)
gain variation with
f = 300 to 3400 Hz
frequency referenced to
1 kHz
−
±0.1
−
dB
∆Gv(T)
gain variation with
Tamb = −25 to +75 °C
temperature referenced
to 25 °C
−
±0.15
−
dB
Vno(TXO)(rms)
noise output voltage at
pin TXO; pin TXI is
shorted through 200 Ω
and 10 µF to GNDTX
psophometrically weighted
(p53 curve); Gv(TXI) = 15 dB;
RMS value
−
−101
−
dBVp
∆Gv(mute)
gain reduction when
muted
MUTE = 0; see Table 2
60
80
−
dB
∆Gv(SEC)
gain reduction in
SECRET mode
Vtxi = 10 mV (RMS);
MUTE = 1; BPC = 0;
see Table 2
60
−
−
dB
HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND DLC)
Gv(HFRX-LSAO)
nominal voltage gain
from pin HFRX to
LSAO
VHFRX = 30 mV (RMS);
RGALS = 255 kΩ;
LVCI = VDD; EVCI = VDD
24.5
27
29.5
dB
∆Gv(HFRX-LSAO)
digital volume control
adjustment range
VHFRX = 30 mV (RMS);
RGALS = 255 kΩ
25.5
27
28.5
dB
∆Gv(step)
digital volume
adjustment step
per step
−
3.85
−
dB
∆Gv
voltage gain adjustment
with RGALS
−28
−
+7
dB
∆Gv(f)
gain variation with
f = 300 to 3400 Hz
frequency referenced to
1 kHz
−
±0.3
−
dB
∆Gv(T)
gain variation with
Tamb = −25 to +75 °C
temperature referenced
to 25 °C
−
±0.3
−
dB
VHFRX(rms)(max)
maximum input voltage
at pin HFRX
(RMS value)
−
580
−
mV
2000 Mar 21
Iline = 70 mA;
RGALS = 33 kΩ; for 2% THD
in the input stage
27
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
PARAMETER
TEA1098A
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vno(LSAO)(rms)
noise output voltage at
pin LSAO; pin HFRX is
open-circuit
(RMS value)
psophometrically weighted
(p53 curve); LVCI = VDD;
EVCI = VDD
−
−79
−
dBVp
∆Gv(mute)
gain reduction if not
active
see Table 2
60
−
−
dB
VLSAO(rms)
output voltage
capability at pin LSAO
with sine wave signal
and loaded with
50 Ω + 220 µF;
GvLSAO = 28 dB
IBB = 1 mA; IDD = 1 mA
−
−
−
Iline = 18 mA
−
0.9
−
V
Iline = 30 mA
−
1.3
−
V
Iline > 50 mA
−
1.6
−
V
150
300
−
mA
when VHFRX jumps up from
20 mV to 20 mV +10 dB
−
−
5
ms
when VBB drops below
VBB(th)
−
1
−
ms
ILSAO(max)
maximum output
current at pin LSAO
(peak value)
DYNAMIC LIMITER (PINS LSAO AND DLC)
tatt
attack time
trel
release time
when VHFRX jumps down
from 20 mV +10 dB
to 20 mV
−
100
−
ms
THD
total harmonic
distortion
VHFRX = 20 mV + 10 dB;
Gv(LSAO) = 28 dB; t > tatt
−
1
2
%
VBB(th)
VBB limiter threshold
−
2.7
−
V
−
−
0.2
V
MUTE RECEIVE (PIN DLC)
VDLC(th)
threshold voltage
required on pin DLC to
obtain mute receive
condition
IDLC(th)
Start-up current
sourced by pin DLC
VDLC = 0.2 V
−
100
−
µA
∆Gvrx(m)
voltage gain reduction
in mute receive
condition
VDLC = 0.2 V
60
80
−
dB
TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)
Preamplifiers
Gv(TSEN)
voltage gain from pin
TXI to TSEN
−
40
−
dB
Gv(RSEN)
voltage gain from pin
HFRX to RSEN
−
0
−
dB
2000 Mar 21
28
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
TEA1098A
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Logarithmic compressor and sensitivity adjustment
∆Vdet(TSEN)
sensitivity detection on
pin TSEN; voltage
change on pin TENV
when doubling the
current from TSEN
ITSEN = 0.8 to 160 µA
−
18
−
mV
∆Vdet(RSEN)
sensitivity detection on
pin RSEN; voltage
change on pin RENV
when doubling the
current from RSEN
IRSEN = 0.8 to 160 µA
−
18
−
mV
Signal envelope detectors
Isource(ENV)
maximum current
sourced from pin TENV
or RENV
−
120
−
µA
Isink(ENV)
maximum current sunk
by pin TENV or RENV
−1.25
−1
−0.75
µA
∆VENV
voltage difference
between RENV and
TENV
−
±3
−
mV
10 µA sourced from both
RSEN and TSEN; signal
detectors tracking; note 1
Noise envelope detectors
Isource(NOI)
maximum current
sourced from pin TNOI
or RNOI
0.75
1
1.25
µA
Isink(NOI)
maximum current sunk
by pin TNOI or RNOI
−
−120
−
µA
∆VNOI
voltage difference
between pins RNOI
and TNOI
when 5 µA is sourced from
−
both RSEN and TSEN; noise
detectors tracking; note 1
±3
−
mV
DIAL TONE DETECTOR
VHFRX(th)(rms)
threshold level at pin
HFRX (RMS value)
RRSEN = 10 kΩ;
CRSEN = 100 nF
−
25
−
mV
threshold level at pin
TXI (RMS value)
RTSEN = 10 kΩ
−
0.75
−
mV
−
13
−
mV
TX LEVEL LIMITER
VTXI(th)(rms)
DECISION LOGIC (PINS IDT AND SWT)
Signal recognition
∆VStrx(th)
2000 Mar 21
threshold voltage
VHFRX < VHFRX(th);
between RENV/RNOI
VTXI < VTXI(th); note 2
or between TENV/TNOI
to switch-over from Idle
mode to RX/TX mode
29
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
SYMBOL
PARAMETER
TEA1098A
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switch-over
Isource(SWT)
current sourced from
pin SWT when
switching to receive
mode
7.5
10
12.5
µA
Isink(SWT)
current sunk by pin
SWT when switching to
transmit mode
−12.5
−10
−7.5
µA
Iidle(SWT)
current sourced from
pin SWT in Idle mode
−
0
−
µA
VOICE SWITCH (PINS STAB AND SWR)
SWR
switching range
−
40
−
dB
∆SWR
switching range
adjustment
with RSWR referenced to
365 kΩ
−40
−
+12
dB
|∆Gv|
voltage gain variation
from active modes to
Idle mode
SWRA = 40 dB
−
±20
−
dB
Gtr
gain tracking
(Gvtx + Gvrx) during
switching, referred to
Idle mode
−
±0.5
−
dB
Notes
1. Corresponds to ±1 dB tracking.
2. Corresponds to 4.3 dB noise/speech recognition level.
2000 Mar 21
30
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18 (14)
CIR
100 µF
IR
REG
20 (16)
CVDD
CVBB
470 µF
AGC
22 (18)
47 µF
VBB
LN
19 (15)
VDD
14 (10)
23 (19)
21 (17)
(38) 1
100 nF
(37) 40
CMICS
MICS
(39) 2
PD
HFC
MUTE
24 (20)
4.7 µF
MIC+
VMIC
RMIC
200 Ω
MIC−
CHFTX
34 (31)
(33) 36
(34) 37
33 (30)
EARO
HFTX
TXO
(35) 38
31
TEA1098A
29 (26)
RGATX
(1) 6
30.1 kΩ
GATX
CTXIN
TXI
RECO
VTXI
CQR
4.7 µF
VHFRX
(11) 15
GALS
31 (28)
RGALS
255 kΩ
DTMF
150 Ω
30 (27)
100 nF
CDTMF
RQR
Crxe
100 nF
CHFRX
100 nF
HFRX
100 kΩ
1 nF
100 kΩ
39 (36)
Re2
CGARS
Re1
100 nF
VHFTX
CGAR
100 pF
GARX
Philips Semiconductors
SLPE
10 nF
4.7 µF
Speech and handsfree IC
Cemc
Cimp
CREG
RSLPE
20 Ω
v = sin
TEST AND APPLICATION INFORMATION
Dz
Vd = 10 V
Eir
Zimp
620 Ω
andbook, full pagewidth
2000 Mar 21
i = 15 mA
J Iline
(12) 16
35 (32)
CGALS
150 pF
LSAO
100 nF
TSEN
VDTMF
(6) 11
9 (4)
(7) 12
TENV
TNOI
(5) 10
7 (2)
(25) 28
17(13)
GND
CTNOI
4.7 µF
GNDTX
25 (21)
STAB
RSTAB
3.65 kΩ
26 (22)
SWR
RSWR
365 kΩ
13 (8)
RNOI
27 (24)
DLC
CDLC
470 nF
CLSAO
220 µF
IDT
SWT
CSWT
220 nF
RRSEN
RIDT
2.2 MΩ
10 kΩ
CRNOI
4.7 µF
CRENV
470 nF
RLSAO
50 Ω
CRSEN
100 nF
FCA145
Fig.17 Test configuration.
TEA1098A
CTENV
470 nF
32 (29)
RENV
Preliminary specification
RTSEN
10 kΩ
CTSEN
100 nF
8 (3)
RSEN
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Vd =
10 V
Cimp
22 µF
Rast2
3.92 kΩ
RSLPE
20 Ω
392 Ω
handset
micro
15 kΩ
Rtx1
Rtx3
8.2 kΩ
VBB
LN
19 (15)
VDD
14 (10)
23 (19)
(38) 1
21 (17)
(39) 2
24 (20)
(33) 36
34 (31)
MIC−
32
CHFTX
HFTX
100 nF
TXO
CTXIN
100 nF
DTMF
TNOI
(35) 38
39 (36)
Re2
100 kΩ
TEA1098A
30 (27)
(11) 15
31 (28)
(12) 16
35 (32)
9 (4)
(7) 12
8 (3)
(5) 10
7 (2)
17 (13)
CTNOI
4.7 µF
32 (29)
GNDTX
25 (21)
26 (22)
STAB
RSTAB
3.65 kΩ
SWR
RSWR
365 kΩ
13 (8)
DLC
CDLC
470 nF
(25) 28
27 (24)
HFRX
CGARS
1 nF
Crxe
100 nF
CHFRX
100 nF
GALS
RGALS
255 kΩ
LSAO
CGALS
150 pF
CLSAO
220 µF
RSEN
RENV
RNOI
IDT
SWT
CSWT
220 nF
RIDT
2.2 MΩ
RRSEN
10 kΩ
CRNOI
4.7 µF
CRENV
470 nF
Fig.18 Basic application diagram.
TEA1098A
FCA146
CRSEN
100 nF
Preliminary specification
CTENV
470 nF
RECO
29 (26)
GND
CTSEN
100 nF
CGAR
100 pF
CQR
10 µF
Re1
100 kΩ
(6) 11
TENV
RTSEN
10 kΩ
MUTE
EARO
33 (30)
(1) 6
GATX
TXI
CDTMF
from
microcontroller
HFC
MUTE
(34) 37
TSEN
D4
PD
HFC
GARX
100 nF
D1
PD
15 kΩ
RGATX
30.1 kΩ
CMICB
33 nF
AGC
22 (18)
CVDD
47 µF
(37) 40
MIC+
Ctx1
from
MICS
RBMICS
2 kΩ
REG
20 (16)
CMICS
4.7 µF
Rtx2
22 nF
22 nF
RMICM
1 kΩ
handsfree
micro
IR
18 (14)
100 nF
MICS
CMICH
33 nF
B
SLPE
CIR
MICS
A
CVBB
470 µF
Rast3
Rast1
130 kΩ
RMICP
1 kΩ Ctx2
CREG
4.7 µF
Philips Semiconductors
D3
Cemc
10 nF
Rbal1
130 Ω
Speech and handsfree IC
D2
Dz
Zimp
620 Ω
dbook, full pagewidth
2000 Mar 21
Cbal
220 nF
Rbal2
820 Ω
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
PACKAGE OUTLINES
VSO40: plastic very small outline package; 40 leads
SOT158-1
D
E
A
X
c
y
HE
v M A
Z
40
21
Q
A2
A
(A 3)
A1
θ
pin 1 index
Lp
L
1
detail X
20
w M
bp
e
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
2.70
0.3
0.1
2.45
2.25
0.25
0.42
0.30
0.22
0.14
15.6
15.2
7.6
7.5
0.762
12.3
11.8
2.25
1.7
1.5
1.15
1.05
0.2
0.1
0.1
0.6
0.3
0.012 0.096
0.017 0.0087 0.61
0.010
0.004 0.089
0.012 0.0055 0.60
0.30
0.29
0.03
0.48
0.46
0.067
0.089
0.059
inches
0.11
0.045
0.024
0.008 0.004 0.004
0.041
0.012
θ
Notes
1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
92-11-17
95-01-24
SOT158-1
2000 Mar 21
EUROPEAN
PROJECTION
33
o
7
0o
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y
X
A
33
23
34
22
ZE
e
E HE
A A2
wM
(A 3)
A1
θ
bp
Lp
pin 1 index
L
12
44
1
detail X
11
wM
bp
e
ZD
v M A
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
2.10
0.25
0.05
1.85
1.65
0.25
0.40
0.20
0.25
0.14
10.1
9.9
10.1
9.9
0.8
12.9
12.3
12.9
12.3
1.3
0.95
0.55
0.15
0.15
0.1
Z D (1) Z E (1)
1.2
0.8
1.2
0.8
θ
o
10
0o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-02-04
97-08-01
SOT307-2
2000 Mar 21
EUROPEAN
PROJECTION
34
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
SOLDERING
Wave soldering
Introduction
Wave soldering techniques can be used for all VSO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all VSO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
2000 Mar 21
35
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 21
36
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
NOTES
2000 Mar 21
37
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
NOTES
2000 Mar 21
38
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
NOTES
2000 Mar 21
39
Philips Semiconductors – a worldwide company
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Vietnam: see Singapore
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Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403502/01/pp40
Date of release: 2000
Mar 21
Document order number:
9397 750 06808