PHILIPS BU2708DX

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES
pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
Collector-emitter voltage peak value
VBE = 0 V
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
ts
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Storage time
PINNING - SOT399
PIN
PIN CONFIGURATION
DESCRIPTION
1
base
2
collector
3
emitter
Ths ≤ 25 ˚C
IC = 4 A; IB = 1.33 A
f = 16 kHz
IF = 4.0 A
ICsat = 4 A; f = 16 kHz
case isolated
TYP.
MAX.
UNIT
-
1700
V
4.0
1.6
4.8
825
8
15
45
1.0
5.5
V
A
A
W
V
A
V
µs
SYMBOL
c
case
b
Rbe
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
Collector-emitter voltage peak value
VBE = 0 V
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-
1700
V
-65
-
825
8
15
4
6
5
45
150
150
V
A
A
A
A
A
W
˚C
˚C
MIN.
MAX.
UNIT
-
10
kV
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
TYP.
MAX.
UNIT
-
3.7
K/W
-
2.8
K/W
35
-
K/W
TYP.
MAX.
UNIT
2500
V
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
-
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
13.5
45
0.91
1.6
15
6
-
V
Ω
V
V
V
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
BVEBO
RBE
VCEsat
VBEsat
VF
hFE
hFE
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
IB = 600 mA
VEB = 7.5 V
IC = 4 A; IB = 1.33 A
IC = 4 A; IB = 1.33 A
IF = 4 A
IC = 1 A; VCE = 5 V
IC = 4 A; VCE = 1 V
0.83
3
1.0
1.00
7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ts
tf
PARAMETER
CONDITIONS
Switching times (line deflection
circuit 16 kHz)
ICsat = 4 A; LC = 1 mH; CFB = 12.2 nF;
VCC = 120 V; IB(end) = 0.8 A; LB = 6 µH;
-VBB = 4 V; -IBM = ICM/2
Turn-off storage time
Turn-off fall time
TYP.
MAX.
UNIT
4.8
0.4
5.5
0.52
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU2708DX
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IBend
IB
t
20us
D.U.T.
26us
LB
IBend
Cfb
64us
VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms.
Fig.3. Switching times test circuit.
ICsat
100
90 %
hFE
BU2708DF
VCE = 5 V
Ths = 25 C
Ths = 85 C
IC
10 %
tf
10
t
ts
IB
IBend
t
1
0.01
- IBM
Fig.2. Switching times definitions.
September 1997
0.1
1
10
IC / A
100
Fig.4. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
hFE
100
BU2708DX
BU2708DF
PTOT / W
BU2708AF/DF
10
VCE = 1 V
Ths = 25 C
Ths = 85 C
IC = 3.5 A
f = 16 kHz
Tj = 85 C
10
1
1
0.01
0.1
1
10
IC / A
100
0
1
1.5
2
IB / A
Fig.5. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
VCEsat / V
0.5
Fig.8. Limit Ptot; Tj = 85˚C
Ptot = f (IB(end)); IC = 3.5 A; f = 16 kHz
BU2708DF
PTOT / W
10
BU2708AF/DF
10
IC = 4 A
Tj = 85 C
Tj = 25 C
f = 16 kHz
Tj = 85 C
1
IC/IB = 8
IC/IB = 4
0.1
0.01
0.1
1
10
IC / A
1
100
0
1
1.5
2
IB / A
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBEsat / V
0.5
Fig.9. Limit Ptot; Tj = 85˚C
Ptot = f (IB(end)); IC = 4.0 A; f = 16 kHz
BU2708DF
ts/tf / us
1.2
BU2708AF/DF
10
Tj = 85 C
Tj = 25 C
1.1
8
IC = 4A
1
6
0.9
IC = 4A
4
IC = 3.5A
0.8
3A
2
0.7
0.6
0
0.5
1
1.5
0
2
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
September 1997
0
0.5
1
1.5
IB / A
2
Fig.10. Limit storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
Normalised Power Derating
PD%
120
BU2708DX
VCC
with heatsink compound
110
100
90
80
70
LC
60
50
VCL
IBend
40
LB
30
20
CFB
T.U.T.
-VBB
10
0
0
20
40
60
80
Ths / C
100
120
140
Fig.13. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;
CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
Zth / K/W
BU2708AF/DF
10
16
IC / A
BU2708AF/DF
14
1
0.1
0.5
Area where
Fails occur
12
0.2
0.1
0.05
10
8
0.02
6
PD
0.01
tp
D=
D= 0
0.001
T
1.0E-06
1E-04
1E-02
tp
T
4
t
2
0
100
1E+00
tp / sec
1000
1700
Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
September 1997
VCE / V
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.15. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200