VISHAY SD600N

SD600N/R Series
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 600 A
FEATURES
•
•
•
•
•
•
•
•
•
B-8
Wide current range
High voltage ratings up to 3200 V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
Compression bonded encapsulations
RoHS complaint
Lead (Pb)-free
Designed and qualified for industrial level
RoHS
COMPLIANT
TYPICAL APPLICATIONS
•
•
•
•
•
PRODUCT SUMMARY
IF(AV)
600 A
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SD600N/R
04 to 20
22 to 32
600
IF(AV)
TC
A
92
IF(RMS)
UNITS
54
°C
A
940
IFSM
I2 t
VRRM
50 Hz
13 000
10 500
60 Hz
13 600
11 000
50 Hz
845
551
60 Hz
772
503
Range
400 to 2000
2200 to 3200
V
- 40 to 180
- 40 to 150
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
22
2200
2300
28
2800
2900
32
3200
3300
SD600N/R
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: [email protected]
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
35
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1
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD600N/R
04 to 20
22 to 32
600
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
A
92
54
°C
570
375
A
100
Maximum RMS forward current
IF(RMS)
DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
Maximum
for fusing
I2t
13 000
10 500
13 600
11 000
100 % VRRM
reapplied
10 900
8830
11 450
9250
Sinusoidal half wave,
initial TJ = TJ maximum
845
551
772
503
100 % VRRM
reapplied
598
390
546
356
t = 0.1 to 10 ms, no voltage reapplied
8450
5510
t = 10 ms
t = 8.3 ms
I2t
°C
940
No voltage
reapplied
No voltage
reapplied
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)),
TJ = TJ maximum
0.78
0.84
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
0.87
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)),
TJ = TJ maximum
0.35
0.40
High level value of forward
slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
0.31
0.38
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.31
1.44
Maximum forward voltage drop
UNITS
A
kA2s
kA2s
V
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
SYMBOL
TEST CONDITIONS
SD600N/R
04 to 20
22 to 32
TJ
- 40 to 180 - 40 to 150
Maximum storage temperature range
TStg
- 55 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.1
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Maximum allowed
mounting torque ± 10 %
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2
°C
K/W
Not-lubricated threads
Approximate weight
Case style
UNITS
See dimensions (link at the end of datasheet)
For technical questions, contact: [email protected]shay.com
50
Nm
454
g
B-8
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.012
0.008
120°
0.014
0.014
90°
0.017
0.019
60°
0.025
0.026
30°
0.042
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
180
SD600N/ R Series (400V to 2000V)
RthJC (DC) = 0.1 K/ W
170
160
150
140
Conduction Angle
130
120
110
100
30°
60°
90°
90
120°
180°
80
0
100
200
300 400
500
600
700
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
150
SD600N/ R Series (2500V to 3200V)
RthJC (DC) = 0.1 K/ W
140
130
120
110
Conduction Angle
100
90
30°
80
90°
120°
180°
60
50
0
SD600N/ R Series (400V to 2000V)
170
RthJC (DC) = 0.1 K/ W
160
150
140
Conduction Period
130
120
110
30°
100
90
60°
90°
120°
80
180°
70
0
200
400
600
DC
800
1000
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Document Number: 93551
Revision: 17-Apr-08
100
200
300 400
500
600
700
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
180
60°
70
150
SD600N/ R Series (2500V to 3200V)
RthJC (DC) = 0.1 K/ W
140
130
120
110
100
Conduction Period
90
80
70
30°
60
60°
90°
50
120°
40
180°
30
0
200
400
600
DC
800
1000
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
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SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
800
W
K/
K/
W
ta
el
-D
R
0.2
02
0.
RMS Limit
K/
W
=
500
0.
1
W
K/
600
A
hS
0.
08
180°
120°
90°
60°
30°
04
0.
700
Rt
Maximum Average Forward Power Loss (W)
Vishay Semiconductors
K/
W
400
0.4
K/ W
300
Conduc tion Angle
200
SD600N/ R Series
(400V to 2000V)
TJ = 180°C
100
0.6
K/ W
1 K/ W
1.8 K/W
0
0
100
200
300
400
500
20 40
600
60
80 100 120 140 160 180
1100
DC
180°
120°
90°
60°
30°
1000
800
700
SA
900
R
th
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
0.
04
0.
08
=
K/
W
0.
02
K/
W
K/
W
-D
el
ta
R
0.1
K/
W
600
500 RMS Limit
0.2
K/
W
Conduction Period
400
300
SD600N/ R Series
(400V to 2000V)
TJ = 180°C
200
100
0.4
K/ W
0.6 K
/W
1 K/ W
1.8 K/ W
0
0
200
400
600
800
20 40
1000
60
80 100 120 140 160 180
900
180°
120°
90°
60°
30°
800
R
SA
th
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
500
=
0.
0.
04
02
K/
K/
W
0.
W
06
-D
K/
el
W
ta
R
0.1
K/
W
400
0.2
700
600
RMS Limit
300
Conduction Angle
200
SD600N/ R Series
(2500V to 3200V)
TJ = 150°C
K/ W
0.4 K
/W
100
1 K/ W
0
0
100
200
300
400
500
25
600
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Maximum Average Forward Power Loss (W)
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
1100
1000
900
800
700
DC
180°
120°
90°
60°
30°
R
600
500
RMS Limit
Conduction Period
400
300
SD600N/ R Series
(2500V to 3200V)
TJ = 150°C
200
100
th
S
A =
0.0
0.0
2K
4K
/W
0.0 / W
6K
-D
/W
elt
a
0.1
R
K/ W
0.2
K/ W
0.4 K
/
W
1 K/ W
0
25
0 100 200 300 400 500 600 700 800 900
50
75
100
125
150
12000
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
10000
8000
6000
4000
SD600N/ R Series
(400V to 2000V)
2000
1
10
10000
100
10000
8000
6000
4000
SD600N/ R Series
(400V to 2000V)
2000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Document Number: 93551
Revision: 17-Apr-08
4000
SD600N/ R Series
(2500V to 3200V)
2000
10
100
Fig. 11 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
12000
6000
1
Fig. 9 - Maximum Non-Repetitive Surge Current
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 180 °C
No Voltage Reapplied
Rated VRRM Reapplied
8000
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
14000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
12000
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ= 150 °C
No Voltage Reapplied
Rated VRRMReapplied
8000
6000
4000
SD600N/ R Series
(2500V to 3200V)
2000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
For technical questions, contact: [email protected]
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SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
10000
TJ = 25°C
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
10000
TJ= 180°C
1000
SD600N/ R Series
(400V to 2000V)
100
TJ = 25°C
TJ= 150°C
1000
SD600N/ R Series
(2500V to 3200V)
100
0
1
2
3
4
0
Transient Thermal Impedanc e Z thJC (K/ W)
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value:
RthJC = 0.1 K/ W
(DC Operation)
0.01
SD600N/ R Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 15 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: [email protected]
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
SD
60
0
N
32
P
C
1
2
3
4
5
6
7
1
-
Diode
2
-
Essential part number
3
-
0 = Standard recovery
4
-
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
P = Stud base B-8 3/4" 16UNF-2A
7
-
C = Ceramic cap
For metric device M24 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93551
Revision: 17-Apr-08
http://www.vishay.com/doc?95303
For technical questions, contact: [email protected]
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Outline Dimensions
Vishay Semiconductors
B-8
DIMENSIONS in millimeters (inches)
Ceramic housing
26 (1.023) MAX.
5 (0.20) ± 0.3 (0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
C.S. 70 mm2
245 (9.645)
255 (10.04)
38 (1.5)
DIA. MAX.
80 (3.15)
MAX.
115 (4.52) MIN.
47 (1.85)
MAX.
21 (0.83) MAX.
27.5 (1.08)
MAX.
SW 45
3/4"-16UNF-2A *
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
Document Number: 95303
Revision: 11-Apr-08
For technical questions, contact: [email protected]
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000