VISHAY VS-15ETL06FPPbF

VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
www.vishay.com
Vishay Semiconductors
Ultralow VF Hyperfast Rectifier
for Discontinuous Mode PFC, 15 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
TO-220AC
• Low leakage current
TO-220 FULL-PAK
• Fully isolated package (VINS = 2500 VRMS)
Base
cathode
2
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
1
Cathode
1
Cathode
3
Anode
VS-15ETL06PbF
VS-15ETL06-N3
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
3
Anode
DESCRIPTION
VS-15ETL06FPPbF
VS-15ETL06FP-N3
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRODUCT SUMMARY
Package
TO-220AC, TO-220FP
IF(AV)
15 A
VR
600 V
VF at IF
1.05 V
trr typ.
60 ns
TJ max.
175 °C
Diode variation
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VRRM
TC = 154 °C
VALUES
UNITS
600
V
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Peak repetitive forward current
IFM
30
TJ, TStg
- 65 to 175
Operating junction and storage temperatures
15
TC = 120 °C (FULL-PAK)
TJ = 25 °C
A
250
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
0.99
1.05
0.92
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
0.85
VR = VR rated
-
0.1
10
TJ = 150 °C, VR = VR rated
-
15
120
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Revision: 02-Jan-12
μA
Document Number: 94004
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
Reverse recovery time
trr
IRRM
Reverse recovery charge
Qrr
TYP.
MAX.
-
60
120
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
-
190
270
TJ = 25 °C
-
220
-
TJ = 125 °C
Peak recovery current
MIN.
UNITS
ns
-
320
-
-
19
-
-
26
-
TJ = 25 °C
-
2.2
-
TJ = 125 °C
-
4.3
-
MIN.
TYP.
MAX.
UNITS
- 65
-
175
°C
-
1.0
1.3
-
3.0
3.5
IF = 15 A
TJ = 25 °C
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 390 V
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
TEST CONDITIONS
TJ, TStg
RthJC
(FULL-PAK)
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
-
0.5
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Weight
6.0
(5.0)
Mounting torque
Case style TO-220AC
Marking device
°C/W
g
15ETL06
Case style TO-220AC FULL-PAK
15ETL06FP
100
100
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
10
1
0.4
IR - Reverse Current (µA)
IF - Instantaneous Forward
Current (A)
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-12
Document Number: 94004
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
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Vishay Semiconductors
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
10
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
Revision: 02-Jan-12
Document Number: 94004
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
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Vishay Semiconductors
25
RMS limit
Average Power Loss (W)
Allowable Case Temperature (°C)
180
170
DC
160
Square wave (D = 0.50)
Rated VR applied
150
140
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
10
5
DC
See note (1)
130
0
0
5
10
15
20
0
25
5
10
15
20
25
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Forward Power Loss Characteristics
180
500
160
400
IF = 30 A
IF = 15 A
DC
140
trr (ns)
Allowable Case Temperature (°C)
20
120
Square wave (D = 0.50)
80 % rated VR applied
300
200
100
100
See note (1)
0
100
80
0
5
10
15
25
20
VR = 390 V
TJ = 125 °C
TJ = 25 °C
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
9000
Qrr (nC)
8000
7000
IF = 30 A
6000
IF = 15 A
5000
4000
3000
2000
VR = 390 V
TJ = 125 °C
TJ = 25 °C
1000
0
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 02-Jan-12
Document Number: 94004
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 02-Jan-12
Document Number: 94004
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
L
06
FP
PbF
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (15 = 15 A)
3
-
E = Single diode
4
-
T = TO-220, D2PAK
5
-
L = Ultralow VF hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
None = TO-220AC
FP = TO-220 FULL-PAK
-
8
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-15ETL06PbF
50
1000
Antistatic plastic tube
VS-15ETL06-N3
50
1000
Antistatic plastic tube
VS-15ETL06FPPbF
50
1000
Antistatic plastic tube
VS-15ETL06FP-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 02-Jan-12
TO-220AC
www.vishay.com/doc?95221
TO-220FP
www.vishay.com/doc?95005
TO-220ACPbF
www.vishay.com/doc?95224
TO-220AC-N3
www.vishay.com/doc?95068
TO-220FPPbF
www.vishay.com/doc?95009
TO-220FP-N3
www.vishay.com/doc?95440
Document Number: 94004
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters
10.6
10.4
Hole Ø
3.4
3.1
2.8
2.6
3.7
3.2
7.31
6.91
16.0
15.8
16.4
15.4
10°
3.3
3.1
13.56
13.05
2.54 TYP.
0.9
0.7
0.61
0.38
2.54 TYP.
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
Revision: 20-Jul-11
5° ± 0.5°
1.4
1.3
2.85
2.65
1.15
TYP.
1.05
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 95005
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.

90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
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1
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000