IRF IRF7526D1TRPBF

PD -95437
IRF7526D1PbF
l
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Co-packaged HEXFET® Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
Micro8TM Footprint
Lead-Free
Description
FETKY TM MOSFET & Schottky Diode
A
A
S
G
1
8
K
2
7
K
3
6
4
5
D
VDSS = -30V
RDS(on) = 0.20Ω
D
Schottky Vf = 0.39V
Top View
TM
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
TM
The new Micro8 package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8
TM
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Maximum
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
Units
100
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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02/22/05
IRF7526D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-30
–––
–––
-1.0
0.94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.17
0.30
–––
–––
–––
–––
–––
–––
7.5
1.3
2.5
9.7
12
19
9.3
180
87
42
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.20
VGS = -10V, ID = -1.2A ƒ
Ω
0.40
VGS = -4.5V, ID = -0.60A ƒ
–––
V
VDS = VGS, I D = -250µA
–––
S
VDS = -10V, I D = -0.60A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
11
ID = -1.2A
1.9
nC VDS = -24V
3.7
VGS = -10V, See Fig. 6 ƒ
–––
VDD = -15V
–––
ID = -1.2A
ns
–––
RG = 6.2Ω
–––
RD = 12Ω, ƒ
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
30
37
Max. Units
Conditions
-1.25
A
-9.6
-1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
45
ns
TJ = 25°C, I F = -1.2A
55
nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
1.9
A
1.3
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7526D1PbF
Power Mosfet Characteristics
10
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
1
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
0.1
10
0.1
1
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
10
TJ = 25°C
TJ = 150°C
1
VDS = -10V
20µs PULSE WIDTH
0.1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
-VDS , Drain-to-Source Voltage (V)
A
I D = -1.2A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7526D1PbF
Power Mosfet Characteristics
20
400
-V GS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
C, Capacitance (pF)
300
Ciss
Coss
200
Crss
100
0
10
VDS = -24V
VDS = -15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
1
I D = -1.2A
0
100
2
4
6
8
10
A
12
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R DS(on)
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.4
10
100µs
1
1ms
10ms
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
A
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7526D1PbF
Power Mosfet Characteristics
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.5
1.0
VGS = -4.5V
0.5
VGS = -10V
0.0
A
0
1
2
3
4
-ID , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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0.60
0.50
0.40
I
= -2.0A
0.30
0.20
0.10
3
6
9
12
15
-VGS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
A
IRF7526D1PbF
Schottky Diode Characteristics
10
100
TJ = 150°C
Reverse Current - IR (mA)
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
5
10
15
20
25
30
Reverse Voltage - V R (V)
1
TJ = 150°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 125°C
TJ = 25°C
0.1
0.0
0.2
0.4
0.6
0.8
Forward
VFM
Forward Voltage
Voltage Drop
Drop -- V
(V)(V)
F
1.0
Allowable Ambient Temperature - (°C)
Instantaneous Forward Current - I F (A)
10
160
V r = 80% Rated
R thJA = 100°C/W
Square wave
140
120
100
80
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
60
40
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current - I F(AV) (A)
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7526D1PbF
Current Regulator
Same Type as D.U.T.
QG
50KΩ
.2µF
12V
.3µF
QGS
QGD
D.U.T.
VG
+VDS
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
Fig 15a. Basic Gate Charge Waveform
+
Fig 16a. Switching Time Test Circuit
td(on)
tr
t d(off)
tf
VGS
10%
90%
VDS
Fig 16b. Switching Time Waveforms
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7
IRF7526D1PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17 For P Channel HEXFETS
8
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IRF7526D1PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
DIM
D
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
SINGLE
DUAL
8 7 6 5
3
H
E
0.25 (.010)
-A-
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G1 S2 G2
1 2 3 4
e
6X
MILLIMETERS
MIN
MAX
MIN
A
.036
.044
0.91
MAX
1.11
A1
.004
.008
0.10
0.20
B
.010
.014
0.25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 BASIC
0.65 BASIC
e1
.0128 BASIC
0.33 BASIC
E
.116
.120
2.95
3.05
H
.188
.198
4.78
5.03
L
.016
.026
0.41
0.66
θ
0°
6°
0°
6°
e1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
-C-
0.10 (.004)
B
A1
8X
0.08 (.003)
M
C A S
L
8X
0.38 8X
( .015 )
C
8X
B S
4.24
5.28
( .167 ) ( .208 )
3.20
( .126 )
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
0.65 6X
( .0256 )
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WEEK
P = DES IGNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
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YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
WW = (27-52) IF PRECEDED BY A LET TER
W
YEAR
Y
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
9
IRF7526D1PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/05
10
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