TLP320,TLP320-2,TLP320-4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP320, TLP320-2, TLP320-4 Telecommunication Office Machine Telephone Use Equipment Unit in mm The TOSHIBA TLP320, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP320−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP320−4 provides four isolated channels in a sixteen plastic DIP package. This is suitable for application of AC input current up to 150mA. TOSHIBA • IF maximum rating: ±150mA • Collector−emitter voltage: 55V (min.) • Current transfer ratio: 25% (min.) (IF = 20mA) 11−5B2 Weight: 0.26g • Isolation voltage: 5000Vrms (min.) • UL recognized: file No. E67349 • BSI approved: BS EN60065:2002, certificate no.7426 BS EN60950-1:2002, certificate no.7427 Pin Configurations (top view) TLP320 TLP320-4 TLP320-2 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 TOSHIBA 11−10C4 Weight: 0.54g 1 : Anode Cathode 2 : Cathode Anode 3 : Emitter 4 : Collector 1,3 : Anode Cathode 2,4 : Cathode Anode 5,7 : Emitter 6,8 : Collector 1,3,5,7 : Anode Cathode 2,4,6,8 : Cathode Anode 9,11,13,15 : Emitter 10,12,14,16 : Collector 1 TOSHIBA 11−20A3 Weight: 1.1g 2007-10-01 TLP320,TLP320-2,TLP320-4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP320−2 TLP320−4 TLP320 Detector LED Forward current Unit IF ±150 mA ΔIF /°C −1.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP ±1 (100μs pulse, 100pps) A Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 80 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC / °C −1.5 −1.0 mW / °C Forward current derating Collector power dissipation derating (1 circuit, Ta ≥ 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 250 200 mW Total package power dissipation derating (Ta≥25°C) ΔPT / °C −2.5 2.0 mW / °C Isolation voltage (Note 1) BVS 5000 (AC, 1min., R.H. ≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device consider a two terminal: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 20 120 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP320,TLP320-2,TLP320-4 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = ±100 mA — 1.4 1.7 V Forward current IF VF = ±0.7 V — 2.5 20 μA Capacitance CT V = 0, f = 1 MHz — 60 — pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA VCE = 24 V, Ta = 85°C — 2 50 μA V = 0, f = 1 MHz — 10 — pF Min. Typ. Max. Unit IF = ±20 mA, VCE = 1 V 25 — — IF = ±100 mA, VCE = 1 V 20 — 80 IC = 2.4 mA, IF = ±20 mA — — 0.4 IC = 2.4 mA, IF = ±100 mA — — 0.4 VF = ± 0.7V, VCE = 24 V — 1 10 μA 0.5 1 2 — Min. Typ. Max. Unit — 0.8 — pF — Ω Collector dark current ICEO Capacitance collector to emitter CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol IC / IF Current transfer ratio IC / IF (high) Collector−emitter saturation voltage VCE (sat) Off−state collector current CTR symmetry IC(off) (Note) IC (ratio) Test Condition IC (IF = −20mA) / IC (IF = +20mA) (Note) % V Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS 5×10 10 10 14 5000 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — Vrms Vdc (Note) IC1 = 1V) I (I = I , V IC(ratio) = C2 F F2 CE IC1(IF = IF1, VCE = 1V) VCE IF1 IC2 IF2 3 2007-10-01 TLP320,TLP320-2,TLP320-4 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω Min. Typ. Max. — 2 — — 3 — — 3 — Turn−off time toff — 3 — Turn−on time tON — 2 — Storage time ts — 15 — Turn−off time tOFF — 25 — Fig. 1 RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = ±16 mA Unit μs μs Switching time test circuit IF RL VCC IF tS VCE VCE 0.5V tON 4 4.5V tOFF 2007-10-01 TLP320,TLP320-2,TLP320-4 PC – Ta 200 160 160 TLP320 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 200 120 80 40 0 −20 0 20 40 60 80 100 120 TLP320−2, −4 80 40 0 −20 120 0 20 Ambient temperature Ta (°C) 40 (mA) 500 Forward current IF (mA) IFP Allowable pulse forward current 120 Ta = 25°C 50 Ta = 25°C 1000 300 100 50 30 30 10 5 3 1 0.5 0.3 10 3 10-3 3 10 -2 3 Duty cycle ratio 10-1 100 3 0.1 0.6 DR 0.8 1.0 1.2 1.4 Forward voltage VF ΔVF / ΔTa – IF 1.6 1.8 (V) IFP – VFP −3.2 1000 −2.8 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 100 IF – V F 100 Pulse width ≦ 100μs 3000 80 Ambient temperature Ta (°C) IFP – DR 5000 60 −2.4 −2.0 −1.6 −1.2 −0.8 500 300 100 50 30 10 Pulse width ≦ 10μs 5 Repetitive 3 frequency = 100Hz Ta = 25°C −0.4 0.1 0.3 1 3 Forward current IF 10 30 1 0.6 50 (mA) 1.0 1.4 1.8 Pulse forward voltage 5 2.2 2.6 VFP (V) 2007-10-01 TLP320,TLP320-2,TLP320-4 IC – IF 200 IC / IF – IF 2000 Ta = 25°C VCE=5V 50 500 1 30 VCE=5V 300 0.4 10 5 3 1 50 30 5 3 1 3 Forward current IF 10 30 1 0.1 100 (mA) 0.4 10 0.3 0.3 1 100 0.5 0.1 0.1 Ta = 25°C 1000 Current transfer ratio IC / IF (%) Collector current IC (mA) 100 0.3 1 3 Forward current IF 10 30 100 (mA) ICEO – Ta 101 Collector dark current ICEO (μA) VCE=24V 10 100 10 10 10 10 5 −1 −2 −3 −4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2007-10-01 TLP320,TLP320-2,TLP320-4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01