Transistors 2SB0792 (2SB792), 2SB0792A (2SB792A) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Unit: mm ■ Features 0.40+0.10 –0.05 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Rating Unit VCBO −150 V −185 VCEO Emitter-base voltage (Collector open) VEBO −150 V 0 to 0.1 2SB0792A 0.4±0.2 10˚ 1.1+0.2 –0.1 Symbol Collector-emitter voltage 2SB0792 (Base open) 2SB0792A 5˚ 2.90+0.20 –0.05 −185 −5 V Collector current IC −50 mA Peak collector current ICP −100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.3 –0.1 2SB0792 1.9±0.1 (0.65) 2 1 (0.95) (0.95) Parameter 2.8+0.2 –0.3 1.50+0.25 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) 0.16+0.10 –0.06 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: • 2SB0792: I • 2SB0792A: 2F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB0792 VCEO Conditions IC = −100 µA, IB = 0 VEBO IE = −10 µA, IC = 0 ICBO VCB = −100 V, IE = 0 2SB0792 Unit V −5 hFE VCE = −5 V, IC = −10 mA 2SB0792A Transition frequency Max −185 Collector-base cutoff current (Emitter open) Collector-emitter saturation voltage Typ −150 2SB0792A Emitter-base voltage (Collector open) Forward current transfer ratio * Min VCE(sat) fT V −1 µA 130 450 130 330 IC = −30 mA, IB = −3 mA VCB = −10 V, IE = 10 mA, f = 200 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT −1 V 200 MHz 4 pF 150 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 130 to 220 185 to 330 260 to 450 Marking symbol 2SB0792 2SB0792A IR IS IT 2FR 2FS Note) The part numbers in the parenthesis show conventional part number. Publication date: March 2003 SJC00058BED 1 2SB0792, 2SB0792A IC VCE −100 Collector current IC (mA) 160 120 80 −80 −60 0 40 80 120 −3 mA −40 −2 mA 0 160 −1 mA −2 0 VCE(sat) IC 25°C −25°C −1 −10 −100 Collector current IC (mA) Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) Ta = 75°C − 0.01 − 0.1 400 300 200 25°C −25°C 100 0 − 0.1 −1 −10 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 6 4 2 −100 Collector-base voltage VCB (V) 2 0 − 0.4 − 0.8 SJC00058BED −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) fT I E Ta = 75°C IE = 0 f = 1 MHz Ta = 25°C −10 −40 0 −12 500 8 0 −1 −60 −20 250 VCE = −5 V Cob VCB 10 −10 −25°C −80 hFE IC −10 − 0.1 −8 600 IC / IB = 10 −1 −6 Ta = 75°C Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −4 VCE = −5 V 25°C −100 −4 mA −20 40 0 Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA Transition frequency fT (MHz) Collector power dissipation PC (mW) 200 IC VBE −120 Collector current IC (mA) PC Ta 240 −100 VCB = −10 V Ta = 25°C 200 150 100 50 0 0.1 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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