400U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 400 A FEATURES • Wide current range RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types • RoHS compliant DO-205AB (DO-9) • Designed and qualified for industrial level TYPICAL APPLICATIONS • Converters PRODUCT SUMMARY IF(AV) • Power supplies 400 A • Machine tool controls • High power drives MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC IF(RMS) VALUES UNITS 400 A 120 °C 630 A 50 Hz 8250 60 Hz 8640 50 Hz 340 60 Hz 311 Range 800 to 1600 V - 40 to 200 °C A IFSM I2 t VRRM TJ kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 80 800 900 120 1200 1300 160 1600 1700 400U(R) Document Number: 93510 Revision: 23-Jun-08 For technical questions, contact: [email protected] IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 www.vishay.com 1 400U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 400 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current TEST CONDITIONS IF(AV) 180° conduction, half sine wave IF(RMS) DC at 110 °C case temperature t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied UNITS 400 A 120 °C 630 A 8250 No voltage reapplied 100 % VRRM reapplied VALUES 8640 6940 Sinusoidal half wave, initial TJ = TJ maximum 7270 340 311 241 100 % VRRM reapplied A kA2s 220 t = 0.1 to 10 ms, no voltage reapplied 3400 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.77 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.85 kA2√s V Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.49 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.49 Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.62 V VALUES UNITS - 40 to 200 °C mΩ Maximum forward voltage drop VFM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.15 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 K/W Maximum allowed mounting torque ± 10 % Not lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet 27 N·m 250 g DO-205AB (DO-9) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.020 0.013 120° 0.023 0.023 90° 0.029 0.031 60° 0.042 0.044 30° 0.073 0.074 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 93510 Revision: 23-Jun-08 400U(R) Series Maximum Allowable Case Temperature (°C) 200 190 180 170 160 150 140 130 120 110 100 90 80 400U/R Conduction Angle 180° 120° 0 90° 60° 30° 50 100 150 200 250 300 350 400 450 200 400U/R 190 180 Conduction Period 170 160 150 140 DC 130 180° 120 30° 60° 90° 120° 110 0 100 200 300 400 500 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 550 RMS Limit R elta -D 350 300 K/ W 0.3 K/ W 0.4 K/W /W 4K 0.0 400 0. 2 = SA Rth 450 W K/ 180° 120° 90° 60° 30° 500 1 0. Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) Standard Recovery Diodes Vishay High Power Products (Stud Version), 400 A 0.6 K/W 250 200 150 Conduction Angle 1 K/ W 1.8 K/W 100 50 400U/R 0 50 100 150 200 250 300 350 400 450 10 30 50 70 90 110 130 150 170 190 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) 800 0.2 K/ W 400 300 RMS Limit Conduction Period 200 100 0 50 400U/R 150 250 350 450 0.3 K/W 0.4 K/W 0.6 K/W 1 K/W aR elt -D 500 0.1 K/ W /W 4K 0.0 600 = DC 180° 120° 90° 60° 30° 700 A hS Rt Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics 1.8 K/W 550 Average Forward Current (A) 650 10 30 50 70 90 110 130 150 170 190 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Document Number: 93510 Revision: 23-Jun-08 For technical questions, contact: [email protected] www.vishay.com 3 400U(R) Series Vishay High Power Products Standard Recovery Diodes 8000 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) (Stud Version), 400 A At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 190°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6000 5000 4000 3000 400U/R 2000 1 10 9000 8000 7000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = 190°C No Voltage Reapplied Rated Vrrm Reapplied 6000 5000 4000 3000 2000 400U/R 1000 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10000 400U/R 1000 Tj = 25°C Tj = 190°C 100 0.5 1 1.5 2 2.5 Instantaneous Forward Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value: RthJC = 0.15 K/W (DC Operation) 0.01 0.001 0.001 400U/R 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93510 Revision: 23-Jun-08 400U(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 400 A ORDERING INFORMATION TABLE Device code 40 0 U R 160 D 1 2 3 4 5 6 1 - 40 = Essential part number 2 - 0 = Standard recovery device 3 - U = Stud normal polarity (cathode to stud) 4 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - Diffused diode Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93510 Revision: 23-Jun-08 http://www.vishay.com/doc?95339 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-205AB (DO-9) for 400U(R) Series DIMENSIONS in millimeters (inches) 19 (0.75) MAX. Glass-metal seal 4 (0. 16) M AX. 39 (1.53) MAX. 9.5 (0.37) MIN. Ø 8.5 (0.33) NOM. C.S. 35 mm² (0.054 s.i.) 200 ± 10 (7.87 ± 0.39) Ø 28.5 (1.08) MAX. 75 (2.95) MIN. SW 32 16 (0.63) MAX. 21 (0.82) MAX. 3/4"-16UNF-2A (1) Note • For metric device: M16 x 1.5 contact factory Document Number: 95339 Revision: 24-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000