V40120C, VB40120C & VI40120C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.423 V at IF = 5 A FEATURES TO-262AA TO-220AB • Trench MOS Schottky Technology K • Low forward voltage drop, low power losses • High efficiency operation 2 3 1 1 V40120C 2 • Low thermal resistance 3 • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) VI40120C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 PIN 2 K • Solder Dip 260 °C, 40 seconds (for TO-220 & TO-262 package) TO-263AB • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC K TYPICAL APPLICATIONS 2 For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. 1 VB40120C PIN 1 PIN 2 K MECHANICAL DATA HEATSINK Case: TO-220AB, TO-262AA & TO263AB Epoxy meets UL 94V-0 flammability rating MAJOR RATINGS AND CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM 250 A VF at IF = 20 A 0.630 V Polarity: As marked Tj max. 150 °C Mounting Torque: 10 in-lbs maximum Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40120C VB40120C VI40120C UNIT VRRM 120 V Maximum average forward rectified current (see Fig. 1) per device per diode IF(AV) 40 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A Maximum repetitive peak reverse voltage Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Voltage rate of change (rated VR) dv/dt 10000 V/µs TJ, TSTG - 20 to + 150 °C Operating junction and storage temperature range Document Number 88937 22-Aug-06 www.vishay.com 1 V40120C, VB40120C & VI40120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage per diode (1) TEST CONDITIONS SYMBOL TYP. MAX. UNIT at IR = 1.0 mA Tj = 25 °C V(BR) 120 (minimum) - V 0.494 0.584 0.768 0.84 0.68 at IF = 5 A IF = 10 A IF = 20 A Tj = 25 °C V VF at IF = 5 A IF = 10 A IF = 20 A Tj = 125 °C 0.423 0.518 0.630 at VR = 90 V Tj = 25 °C Tj = 125 °C 11 10 - µA mA at VR = 120 V Tj = 25 °C Tj = 125 °C 31 22 500 40 µA mA Reverse current at rated VR per diode (1) IR Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode V40120C VB40120C RθJC VI40120C UNIT 2.0 °C/W ORDERING INFORMATION PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40120C-E3/45 PREFERRED P/N 2.248 45 50/Tube Tube TO-263AB VB40120C-E3/4W 1.39 4W 50/Tube Tube TO-263AB VB40120C-E3/8W 1.39 8W 800/Reel Tape & Reel TO-262AA VI40120C-E3/4W 1.458 4W 50/Tube Tube 50 18 Resistive or Inductive Load D = 0.5 16 40 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) V(B,I)40120C 30 20 10 D = 0.8 D = 0.3 14 D = 0.2 12 D = 1.0 D = 0.1 10 8 T 6 4 D = tp/T 2 tp 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 Document Number 88937 22-Aug-06 V40120C, VB40120C & VI40120C Vishay General Semiconductor 10000 Tj = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Tj = Tj max. 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) 300 200 150 100 1000 50 100 0 0 10 0.1 100 1 Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 Figure 6. Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 10 Reverse Voltage (V) Number of Cycles at 60 Hz Tj = 150 °C Tj = 125 °C 10 Tj = 25 °C 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 Instantaneous Forward Voltage (V) Junction to Case 1 0.1 0.01 0.001 0.01 0.1 1 10 100 t - Pulse Duration (s) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (mA) 1000 100 Tj = 150 °C 10 Tj = 125 °C 1 0.1 Tj = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Document Number 88937 22-Aug-06 www.vishay.com 3 V40120C, VB40120C & VI40120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) T O-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.185 (4.70) 0.175 (4.44) 0.113 (2.87) 0.103 (2.62) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) Max. 0.250 (6.35) Min. 30° (Typ) (REF) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.350 (8.89) 0.330 (8.38) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.401 (10.19) 0.381 (9.68) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) PIN 1 PIN 2 PIN 3 HEATSINK 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.045 (1.14) 0-0.01 (0-0.254) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.205 (5.20) 0.195 (4.95) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Document Number 88937 22-Aug-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1