TLP627,TLP627-2,TLP627-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP627,TLP627-2,TLP627-4 Unit in mm PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP627-2 offers two isolated channels in a eight lead plastic DIP, while the TLP627-4 provide four isolated channels per package. Collector-Emitter Voltage Current Transfer Ratio Isolation Voltage UL Recognized z z z z UL Recognized BSI Approved 11−5B2 Weight: 0.26 g : 300V(Min) : 1000%(Min) : 5000Vrms(Min) : UL1577,File No.E67349 MADE IN JAPAN TOSHIBA MADE IN THAILAND E67349 *1 E152349 *1 7426, 7427 *2 7426, 7427 *2 *1 UL1577 *2 BS EN60065: 2002, BS EN60950-1: 2002 TOSHIBA PIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627-2 TLP627 TLP627-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1: ANODE 2: CATHODE 3: EMITTER 4:COLLECTOR 1,3: ANODE 2,4: CATHODE 5,7: EMITTER 6,8:COLLECTOR 11−10C4 1,3,5,7 : ANODE 2,4,6,8 : CATHODE 9,11,13,15 : EMITTER 10,12,14,16 :COLLECTOR 1 TOSHIBA 11−20A3 Weight: 1.1 g 2007-10-01 TLP627,TLP627-2,TLP627-4 Absolute Maximum Ratings (Ta=25°C) RATING CHARACTERISTIC SYMBOL Forward Current Forward Current Derating LED Pulse Forward Current Power Dissipation (1 Circuit) DETECTOR Power Dissipation Derating (Ta≥25°C,1 Circuit) UNIT TLP627 TLP627-2 TLP627-4 IF 60 50 mA ∆IF /°C −0.7(Ta≥39°C) −0.5(Ta≥25°C) mA /°C IFP 1(100μs pulse,100pps) A PD 100 70 mW ∆ PD /°C -1.0 -0.7 mW /°C Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Collector-Emitter Voltage VCEO 300 V Emitter -Collector Voltage VECO 0.3 V IC 150 mA Collector Current Collector Power Dissipation (1 Circuit) Collector Power Dissipation Derating (Ta≥25°C,1 Circuit) PC 150(*300) 100 mW ∆ Pc /°C -1.5(*-3.5) -1.0 mW /°C Junction Temperature Tj 125 °C Operating Temperature Range Topr −55~100 °C Storage Temperature Range Tstg −55~125 °C Lead Soldering Temperature (10s) Tsold 260(10sec) °C Total Package Power Dissipation Total Package Power Dissipation Derating Isolation Voltage (Ta≥25°C,1 Circuit) (AC,1min. , R.H.≤60%) (Note1) PT 250(*320) 150 mW ∆ PT/°C -2.5(*-3.2) -1.5 mW /°C BVS 5000 Vrms *IF=20mA Max Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note1)Device considered a two terminal device : LED side pins Shorted together and DETECTOR side pins shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN. Supply Voltage VCC Forward Current IF Collector Current Operating Temperature TYP. MAX. UNIT — — 200 V — 16 25 mA IC — — 120 mA Topr −25 — 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP627,TLP627-2,TLP627-4 Individual Electrical Characteristics (Ta=25°C) LED CHARACTERISTIC TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V=0, — 30 — pF Collector-Emitter Breakdown Voltage DETECTOR SYMBOL Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Collector to Emitter f=1MHz V(BR)CEO IC = 0.1mA 300 — — V V(BR)ECO IE = 0.1mA 0.3 — — V VCE = 200V — 10 200 nA VCE = 200V , Ta = 85°C — — 20 μA V=0 , f=1MHz — 10 — pF MIN. TYP. MAX. UNIT ICEO CCE Coupled Electrical Characteristics (Ta=25°C) CHARACTERISTIC Current Transfer Ratio Saturated CTR Collector-Emitter Saturation Voltage SYMBOL TEST CONDITION IC/IF IF=1mA , VCE=1V 1000 4000 — % IC/IF(sat) IF=10mA , VCE=1V 500 — — % IC=10mA , IF=1mA — — 1.0 IC=100mA , IF=10mA 0.3 — 1.2 MIN. TYP. MAX. UNIT — 0.8 — pF — Ω VCE(sat) V Isolation Electrical Characteristics (Ta=25°C) CHARACTERISTIC Capacitance Input to Output Isolation Resistance SYMBOL CS RS TEST CONDITION VS=0 , f=1MHz VS=500V , R.H.≤60% AC, 1minute Isolation Voltage BVs 5×10 10 10 14 5000 — — AC, 1second, in oil — 10000 — DC, 1 minute, in oil — 10000 — 3 Vrms Vdc 2007-10-01 TLP627,TLP627-2,TLP627-4 Switching Characteristics (Ta=25°C) CHARACTERISTIC SYMBOL Rise Time tr Fall Time tf Turn-on Time ton Turn-off Time toff Turn-on Time tON Strage Time ts Turn-off Time tOFF TEST CONDITION MIN. TYP. MAX. — 40 — — 15 — — 50 — — 15 — — 5 — — 40 — — 80 — VCC=10V IC=10mA RL=100Ω RL=180Ω (Fig.1) VCC=10V , IF=16mA UNIT μs Fig.1 SWITCHING TIME TEST CIRCUIT VCC IF RL VCE IF VCE 9V ts VCC 1V tON tOFF 4 2007-10-01 TLP627,TLP627-2,TLP627-4 5 2007-10-01 TLP627,TLP627-2,TLP627-4 6 2007-10-01 TLP627,TLP627-2,TLP627-4 7 2007-10-01 TLP627,TLP627-2,TLP627-4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01