TOSHIBA TLP504A

TLP504A,TLP504A−2
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP504A,TLP504A−2
Programmable Controllers
AC / DC−Input Module
Solid State Relay
Unit in mm
The TOSHIBA TLP504A and TLP504A−2 consists of a
photo−transistor optically coupled to a gallium arsenide
infrared emitting diode.
The TLP504A offers two isolated channels in an eight
lead plastic DIP package, while the TLP504A−2 provides
four isolated channels in a sixteen plastic DIP package.
•
Collector−emitter voltage: 55 V (min.)
•
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
•
Isolation voltage: 2500 Vrms (min.)
•
UL recognized: UL1577,
TOSHIBA
File no. E67349
11−10C4
Weight: 0.54 g
Pin Configurations (top view)
TLP504A
TLP504A-2
1
8
1
16
2
7
2
15
3
6
3
14
4
5
4
13
5
12
6
11
7
10
8
9
1, 4 : Anode
2, 3 : Cathode
5, 8 : Emitter
6, 7 : Collector
TOSHIBA
11−20A3
Weight: 1.1 g
1, 4, 5, 8
: Anode
2, 3, 6, 7
: Cathode
9, 12, 13, 16 : Emitter
10, 11, 14, 15 : Collector
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TLP504A,TLP504A−2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
Detector
LED
Forward current derating
Rating
Symbol
Unit
TLP504A
TLP504A−2
IF
60
50
mA
ΔIF / °C
−0.7 (Ta ≥ 39°C)
−0.5 (Ta ≥ 25°C)
mA /°C
Pulse forward current
IFP
1 (100μs pulse, 100pps)
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
VCEO
55
V
Emitter−collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
(1 circuit)
PC
150
100
mW
ΔPC / °C
−1.5
−1.0
mW /°C
Collector power dissipation
derating (1 circuit Ta ≥ 25°C)
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~150
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature
Tsol
260 (10 s)
°C
Total package power dissipation
RT
250
150
mW
Total package power dissipation
derating (Ta ≥ 25°C)
ΔPT / °C
−2.5
−1.5
mW / °C
Isolation voltage
BVS
2500 (AC, 1min., R.H.≤ 60%)
(Note 1)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min.
Supply voltage
VCC
Forward current
IF
Collector current
Operating temperature
Typ.
Max.
Unit
―
5
24
V
―
16
20
mA
IC
―
1
10
mA
Topr
−25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP504A,TLP504A−2
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
—
—
10
μA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Collector−emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
55
—
—
V
Emitter−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
—
—
V
VCE = 24 V
—
10
100
nA
VCE = 24 V, Ta = 85°C
—
2
50
μA
V = 0, f = 1 MHz
—
10
—
pF
Min.
Typ.
Max.
Unit
50
—
600
100
—
600
Collector dark current
ICEO
Capacitance
collector to emitter
CCE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector−emitter
saturation voltage
Symbol
IC / IF
IC / IF (sat)
VCE (sat)
Test Condition
IF = 5 mA, VCE = 5 V
Rank GB
%
IF = 1 mA, VCE = 0.4 V
Rank GB
—
60
—
30
—
—
IC = 2.4 mA, IF = 8 mA
—
—
0.4
IC = 0.2 mA, IF = 1 mA
Rank GB
—
0.2
—
—
—
0.4
Min.
Typ.
Max.
Unit
0.8
—
pF
—
Ω
%
V
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Capacitance input to output
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V
AC, 1 minute
Isolation voltage
BVS
—
10
5×10
10
14
2500
—
—
AC, 1 second, in oil
—
5000
—
DC, 1 minute, in oil
—
5000
—
3
Vrms
Vdc
2007-10-01
TLP504A,TLP504A−2
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
ton
Test Condition
VCC = 10 V, IC = 2 mA
RL = 100Ω
Min.
Typ.
Max.
—
2
—
—
3
—
—
3
—
Turn−off time
toff
—
3
—
Turn−on time
tON
—
2
—
—
15
—
—
25
—
Storage time
ts
Turn−off time
tOFF
RL = 1.9 kΩ
VCC = 5 V, IF = 16 mA
(Fig.1)
Unit
μs
μs
Fig. 1 Switching time test circuit
IF
RL
IF
VCC
tS
VCE
4
VCE
4.5V
0.5V
tON
tOFF
VCC
2007-10-01
TLP504A,TLP504A−2
IF – Ta
PC – Ta
240
200
100
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
120
80
TLP504A
60
TLP504A-2
40
160
TLP504A
120
TLP504A-2
80
40
20
0
-20
0
20
40
60
80
100
0
-20
120
0
Ambient temperature Ta (℃)
100
Pulse width ≤ 100μs
3000
60
80
100
120
IF – VF
Ta = 25℃
50
IF (mA)
Ta = 25℃
1000
500
300
Forward current
Allowable pulse forward
current IFP (mA)
40
Ambient temperature Ta (℃)
IFP – DR
5000
20
100
50
30
30
10
5
3
1
0.5
0.3
10
3
10-3
10-2
3
3
10
-1
100
3
0.1
0.4
Duty cycle ratio DR
0.6
0.8
1.0
Forward
1000
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
0.3
1
Forward
3
current
10
IF
1.4
1.6
1.4
1.6
voltage VF (V)
IFP – VFP
– IF
Pulse forward current IFP (mA)
Forward voltage temperature
coefficient ΔVF /ΔTa (mRV / ℃)
ΔVF/ΔTa
1.2
500 Repetitive frequency=100Hz
300 Ta = 25℃
100
50
30
10
5
3
1
0
30
(mA)
Pulse width ≤ 10μs
0.4
0.8
Pulse forward
5
1.0
voltage
1.2
VFP (V)
2007-10-01
TLP504A,TLP504A−2
IC – VCE
ICEO – Ta
80
VCE = 24V
10
0
10V
Collector dark current ICEO
(μA)
5V
10
-1
60
50mA
30mA
20mA
40
15mA
PC(MAX.)
10mA
20
IF=5mA
0
10
Ta = 25℃
1
Collector current IC (mA)
10
-2
0
2
4
8
6
Collector-emitter voltage
10
VCE (V)
IC – VCE
10
-3
Collector current IC (mA)
10
-4
0
40
20
80
60
Ambient temperature Ta
100
120
(℃)
IC – IF
100 Ta = 25°C
VCE = 5V
VCE = 0.4V
50
(mA)
30
20mA
15
10mA
10
5mA
5
0
0
IF=2mA
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage
5
1.2
1.4
VCE (V)
IC / IF – IF
500
SAMPLE A
300
SAMPLE B
SAMPLE A
1
Current transfer ratio
IC / IF (%)
Collector current IC
40mA
30mA
20
10
3
Ta = 25℃
50mA
25
0.5
0.3
0.1
50 SAMPLE B
30
Ta = 25°C
VCE = 5V
VCE = 0.4V
10
0.05
0.03
0.3
100
1
3
Forward
10
current
30
5
0.3
100
IF (mA)
1
3
Forward
6
10
current
30
100
IF (mA)
2007-10-01
TLP504A,TLP504A−2
IC – Ta
VCE (sat) – Ta
100
IF = 5mA
25mA
IC = 1mA
VCE = 5V
50
0.16
30
10mA
0.12
Collector current IC (mA)
Collector-emitter saturation
voltage VCE(sat) (V)
0.20
0.08
0.04
0
-20
0
20
40
60
80
100
Ambient temperature Ta (℃)
5mA
10
5
3
1mA
1
0.5
IF = 0.5mA
0.3
1000
500
300
RL – Switching Time
Ta = 25°C
0.1
IF = 16mA
-20
0
20
40
Ambient temperature
VCC = 5V
60
80
100
Ta (℃)
Switching time (μs)
tOFF
100
50
ts
30
10
5
3
1
1
tON
3
10
Load
30
100
300
resistance RL (kΩ)
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2007-10-01
TLP504A,TLP504A−2
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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