◆CMOS Low Power Consumption ◆Oscillation Frequency : 4MHz~ 125MHz : 4MHz ~ 30MHz (Fundamental Oscillation) : 20MHz ~ 125MHz (3rd Overtone Oscillation) ◆3-State Output ◆Built-in Capacitors Cg, Cd ◆Built-in Feedback Resistor ◆Chip form ◆Mini Mold SOT-26 Package ■APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XC2164 series are high frequency, low current Oscillation Frequency consumption CMOS ICs with built-in crystal oscillator and divider circuits. For fundamental oscillation, output is selectable from any one of the following values for f0: f0/1, f0/2, f0/4, f0/8. With oscillation capacitors and a feedback resistor built-in, it is possible to configure a stable fundamental oscillator or 3rd overtone oscillator using only an external crystal. Also the series has stand-by function built-in and the type, which suspends the oscillation completely (C/E type) or the type ●Crystal oscillation modules ●Micro computer, DSP clocks ●Communication equipment ●Various system clocks : 4MHz ~ 30MHz (Fundamental) 20MHz ~ 125MHz(3rd Overtone) Divider Ratio : Selectable from f0/1, f0/2, f0/4, f0/8 (f0/2, f0/4, f0/8 are fundamental only) Output :3-State Operating Voltage Range :3.3V±10%, 5.0V±10% Low Power Consumption :Stand -by function included Selectable from C/E type and O/E type Chip Form :Chip Size 1.3×0.8 mm Ultra Small Package :SOT-26 mini mold suspends only an output (O/E type) are available. The XC2164 series are integrated into SOT-26 packages. The series is also available in chip form. ■PIN CONFIGURATION ■PIN ASSIGNMENT PIN NUMBER 1 2 PIN NAME Q0 VSS 3 /XT 4 XT Crystal Oscillator Connection (Input) 5 6 VDD /INH Power Supply Stand-by Control* FUNCTION Clock Output Ground Crystal Oscillator Connection (Output) *Stand-by control pin has a pull-up resistor built-in. unit [μm] ■/INH, Q0 PIN FUNCTION XC2164 ETR1404_001.doc /INH Q0 “H” or OPEN Clock Output “L” High impedance 1683 XC2164 Series ■PAD LAYOUT FOR CHIP FORM ■PAD DIMENSIONS PIN NUMBER PIN NANE 1 2 3 4 5 6 Q0 VSS / XT XT VDD / INH PAD DIMENSIONS X Y 514 222 - 450 - 450 514 47 - 264 - 264 - 264 264 27 264 ■ PRODUCT CLASSIFICATION ●Ordering Information XC2164 ①②③④⑤⑥ DESIGNATOR DESCRIPTION ① ② ③ ④ Divider Ratio & Stand-by Mode Fixed Number Duty Level Frequency Range & Rf, Cg, Cd Values ⑤ Package ⑥ Device Orientation SYMBOL A B C D K L M N 5 1 (Table 1) (Table 2) C M R L T F W DESCRIPTION : Chip Enable: f0/1 : Chip Enable: f0/2 (Fundamental only) : Chip Enable: f0/4 (Fundamental only) : Chip Enable: f0/8 (Fundamental only) : Output Enable: f0/1 : Output Enable: f0/2 (Fundamental only) : Output Enable: f0/4 (Fundamental only) : Output Enable: f0/8 (Fundamental only) :: CMOS (VDD/2) *TTL: Fundamental 4MHz to 30MHz : 3rd Overtone, built-in type : Fundamental, built-in type : Chip form : SOT-26 : Embossed tape, standard feed : Embossed tape, reverse feed : Chip tray (Wafer thickness : 280±20μm) : Chip tray (Wafer thickness : 200±20μm) : Wafer Table 1: 3rd Overtone, Built-In Type SYMBOL A B C D E F H K L FREQUENCY RANGE 3.3V ±10% 5.0V ±10% － 20MHz to 30MHz 20MHz to 30MHz 30MHz to 40MHz 30MHz to 40MHz 40MHz to 50MHz 40MHz to 50MHz 50MHz to 65MHz 50MHz to 65MHz 65MHz to 80MHz 65MHz to 80MHz 80MHz to 95MHz 80MHz to 95MHz 95MHz to 110MHz 95MHz to 110MHz 110MHz to 125MHz 110MHz to 125MHz － Rf （kΩ） 9.0 6.5 5.0 3.5 2.8 2.5 2.2 2.0 2.3 Cg （pF） 21.5 20.0 16.0 14.0 12.5 10.0 8.0 7.0 5.5 Cd （pF） 21.5 20.0 16.0 14.0 12.5 10.0 8.0 7.0 5.5 Rf （kΩ） 3.5/7.0 3.5/7.0 Cg （pF） 20.0 35.0 Cd （pF） 20.0 35.0 Table 2: Fundamental, Built-In Type SYMBOL M, V T FREQUENCY RANGE 3.3V ±10% 5.0V ±10% 4MHz to 30MHz 4MHz to 30MHz 4MHz to 30MHz 4MHz to 30MHz (＊)Rf = 3.5MΩ@VDD = 5.0V Operation Rf = 7.0 MΩ@VDD =3.3V Operation 1684 XC2164 Series ■ PACKAGING INFORMATION ●SOT-26 ■ MARKING RULE ●SOT-26 6 5 4 ① ② ③ ④ 1 2 3 SOT-26 (TOP VIEW) ①Represents product series MARK 4 ②Represents divider ratio <Chip Enable> MARK RATIO A f0/1 B f0/2 *B, C, D: fundamental only <Output Enable> MARK RATIO K f0/1 L f0/2 *L, M, N: fundamental only MARK C D RATIO f0/4 f0/8 MARK M N RATIO f0/4 f0/8 ③Represents recommended frequency & Rf, Cg &Cd values *) Please refer to the ordering information, SYMBOL ① to ④ ④Represents assembly lot number (Based on internal standards) 1685 XC2164 Series ■BLOCK DIAGRAM ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL CONDITIONS UNITS Supply Voltage VDD VSS - 0.3 ~ VSS + 7.0 V Input Voltage VIN Power Dissipation Pd Operating Temperature Range Topr Storage Temperature Range Tstg VSS - 0.3 ~ VDD + 0.3 250* - 40 ~ + 85 V mW ℃ - 65 ~ + 150 (Chip Form) ℃ - 55 ~ + 125 (SOT-26) ℃ ** When implemented on a glass epoxy PCB. (SOT-26 package) 1686 XC2164 Series ■ELECTRICAL CHARACTERISTICS ●DC Electrical Characteristics XC2164A51M, T, V / XC2164K51M, T, V (Fundamental) 5.0V operation (unless otherwise stated, VDD=5.0V, No Load, Ta=-30~+80℃) PARAMETER Operating Voltage "H" Level Input Voltage "L" Level Input Voltage "H" Level Output Voltage "L" Level Output Voltage SYMBOL VDD VIH VIL VOH VOL Supply Current 1 IDD1 Supply Current 2 IDD2 Input Pull-Up Resistance 1 Input Pull-Up Resistance 2 Internal Oscillation Feedback Resistance Output Disable Leak Current CONDITIONS CMOS: VDD=4.5V, IOH=-16mA CMOS: VDD=4.5V, IOH=16mA XC2164A51M, V XC2164A51T XC2164K51M, V XC2164K51T XC2164A51M, V /INH="L", XC2164A51T Q0=Open XC2164K51M, V f=30MHz XC2164K51T /INH="L" /INH=0.7 VDD /INH=Open, Q0=Open f=30MHz Rup1 Rup2 Rf IOZ /INH="L" MIN. 4.5 2.4 3.9 0.5 25 TYP. 5.0 4.2 0.3 11 11 11 11 5 5 MAX. 5.5 0.4 0.4 (15) (15) (15) (15) (8) (8) (T.B.D.*) (T.B.D.*) 9 (14) 1.0 2.0 50 100 UNITS V V V V V mA μA mA MΩ kΩ - 3.5 - MΩ - - 10 μA * T.B.D.: To be determined XC2164A51M, XC2164K51M (Fundamental) 3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃) PARAMETER Operating Voltage "H" Level Input Voltage "L" Level Input Voltage "H" Level Output Voltage "L" Level Output Voltage SYMBOL VDD VIH VIL VOH VOL Supply Current 1 IDD1 Supply Current 2 IDD2 Input Pull-Up Resistance 1 Input Pull-Up Resistance 2 Internal Oscillation Feedback Resistance Output Disable Leak Current Rup1 Rup2 CONDITIONS CMOS: VDD=2.97V, IOH=-8mA CMOS: VDD=2.97V, IOH=8mA /INH=Open, XC2164A51M Q0=Open, f=30MHz XC2164K51M /INH="L", XC2164A51M Q0=Open, f=30MHz XC2164K51M /INH="L" /INH=0.7 VDD Rf Id /INH="L" MIN. 2.97 2.4 2.5 1.0 35 TYP. 3.30 5 MAX. 3.63 0.4 0.4 (8) (T.B.D.*) (T.B.D.*) 2 (4) (T.B.D.*) (T.B.D.*) 2.0 4.0 70 140 UNITS V V V V V mA μA mA MΩ kΩ - 7.0 - MΩ - - 10 μA * T.B.D.: To be determined 1687 XC2164 Series ■ELECTRICAL CHARACTERISTICS (Continued) XC2164A51T, V / XC2164K51T, V (Fundamental) 3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃) PARAMETER Operating Voltage "H" Level Input Voltage "L" Level Input Voltage "H" Level Output Voltage "L" Level Output Voltage Supply Current 1 Supply Current 2 Input Pull-Up Resistance 1 Input Pull-Up Resistance 2 Internal Oscillation Feedback Resistance Output Disable Leakage Current SYMBOL VDD VIH VIL VOH VOL IDD1 IDD2 Rup1 Rup2 CONDITIONS CMOS: 2.97V, IOH=-8mA CMOS: 2.97V, IOH=8mA XC2164A51T XC2164A51V XC2164K51T XC2164K51V XC2164A51T /INH="L", XC2164A51V Q0=Open, XC2164K51T f=30MHz XC2164K51V /INH="L" /INH=0.7 VDD /INH=Open, Q0=Open, f=30MHz Rf IOZ /INH="L" MIN. 2.50 2.4 2.5 1.0 35 TYP. 3.30 4 5 4 5 2 2 MAX. 3.63 0.4 0.4 (6.5) (8) (6.5) (8) (4) (4) UNITS V V V V V (T.B.D.*) (T.B.D.*) (T.B.D.*) (T.B.D.*) 2.0 4.0 70 140 mA μA mA MΩ kΩ - 7.0 - MΩ - - 10 μA * T.B.D.: To be determined Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value SYMBOL M V T OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE VDD=3.3V±10% VDD=5.0V±10% ±4.3ppm ±4.5ppm ±1.2ppm ±2.1ppm ±9.4ppm ±7.0ppm NEGATIVE RESISTANCE VALUE VDD=3.3V VDD=5.0V -130Ω -220Ω -150Ω -250Ω -660Ω -760Ω (The designed value when 30MHz crystal is used.) 1688 XC2164 Series ■ELECTRICAL CHARACTERISTICS (Continued) XC2164A51A ~ XC2164A51K (3rd Overtone) 5.0V Operation (Unless otherwise stated, VDD=5.0V, No Load, Ta=-30~+80℃) PARAMETER Operating Voltage "H" Level Input Voltage "L" Level Input Voltage "H" Level Output Voltage "L" Level Output Voltage SYMBOL Supply Current 1 IDD1 Supply Current 2 Input Pull-Up Resistance 1 Input Pull-Up Resistance 2 IDD2 Rup1 Rup2 Internal Oscillation Feedback Resistance Rf Output Disable Leak Current IOZ VDD VIH VIL VOH VOL CONDITIONS MIN. 4.5 2.4 CMOS: 4.5V, IOH=-16mA 3.9 CMOS: 4.5V, IOH=16mA XC2164A51A, f0=30MHz XC2164A51B, f0=40MHz XC2164A51C, f0=55MHz XC2164A51D, f0=70MHz /INH=Open, Q0=Open XC2164A51E, f0=85MHz XC2164A51F, f0=100MHz XC2164A51H, f0=110MHz XC2164A51K, f0=125MHz /INH="L", Q0=Open /INH="L" 0.5 /INH=0.7 VDD 25 XC2164A51A XC2164A51B XC2164A51C XC2164A51D XC2164A51E XC2164A51F XC2164A51H XC2164A51K /INH="L" - TYP. 5.0 4.2 0.3 17.0 17.0 19.0 23.0 24.0 30.0 30.0 30.0 5.0 1.0 50 9.0 6.5 5.0 3.5 2.8 2.5 2.2 2.0 MAX. 5.5 0.4 0.4 (23) (23) (26) (32) (32) (40) (40) (40) (8) 2.0 100 - UNITS V V V V V - 10 μA mA μA MΩ kΩ kΩ 1689 XC2164 Series ■ELECTRICAL CHARACTERISTICS (Continued) XC2164A51B, C, E, F, H, K, L (3rd Overtone) 3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃) PARAMETER Operating Voltage "H" Level Input Voltage "L" Level Input Voltage "H" Level Output Voltage "L" Level Output Voltage SYMBOL Supply Current 1 IDD1 Supply Current 2 Input Pull-Up Resistance 1 Input Pull-Up Resistance 2 IDD2 Rup1 Rup2 Internal Oscillation Feedback Resistance Rf Output Disable Leak Current IOZ VDD VIH VIL VOH VOL CONDITIONS CMOS: 2.97V, IOH=-8mA CMOS: 2.97V, IOH=8mA XC2164A51B, f0=30MHz XC2164A51C, f0=40MHz XC2164A51E, f0=70MHz /INH=Open, XC2164A51F, f0=85MHz Q0=Open XC2164A51H, f0=100MHz XC2164A51K, f0=110MHz XC2164A51L, f0=125MHz /INH="L", Q0=Open /INH="L" /INH=0.7 VDD XC2164A51B XC2164A51C XC2164A51E XC2164A51F XC2164A51H XC2164A51K XC2164A51L /INH="L" MIN. 2.97 2.4 2.5 1.0 35 - TYP. 3.30 4.5 5.0 8.0 8.5 9.5 10.0 10.5 2.0 2.0 70 6.5 5.0 2.8 2.5 2.2 2.0 2.3 MAX. 3.63 0.4 0.4 (7) (8) (13) (13) (15) (15) (15) 4.0 140 - UNITS V V V V V - - 10 μA mA μA MΩ kΩ kΩ XC2164A51D (3rd Overtone) 3.3V Operation (Unless otherwise stated, VDD=3.3V, Oscillation Frequency f0=48MHz, Ta=30~+80℃) PARAMETER Operating Voltage 'H' Level Input Voltage 'L' Level Input Voltage 'H' Level Output Voltage 'L' Level Output Voltage SYMBOL VDD VIH VIL VOH VOL Supply Current 1 IDD1 Supply Current 2 Input Pull-Up Resistance 1 Input Pull-Up Resistance 2 Internal Oscillation Feedback Resistance Output Disable Leak Current IDD2 Rup1 Rup2 CMOS: 2.97V, IOH=-8mA CMOS: 2.97V, IOH=8mA XC2164A51D, /INH=Open, Q0=Open F0=55MHz /INH = 'L', Q0=Open /INH = 'L' /INH = 0.7VDD Rf IOZ 1690 CONDITIONS MIN. 2.70 2.4 2.5 - TYP. 3.30 - MAX. 3.63 0.4 0.4 UNITS V V V V V - 6.5 (10) mA 1.0 35 2.0 2.0 70 4.0 140 μA MΩ kΩ XC2164A51D - 3.5 - kΩ /INH = 'L' - - 10 μA XC2164 Series ■SWITCHING CHARACTERISTICS XC2164A51M, T, V (Fundamental) <Chip Enable> PARAMETER SYMBOL Output Rise Time (*1) tr Output Fall Time (*1) tf Output Duty Cycle DUTY Output Disable Delay Time (*1) (unless otherwise stated, VDD=3.3V or 5.0V, Ta=-30~+80℃) CONDITIONS MIN. TYP. MAX. UNITS CMOS: CL=15pF, 0.1VDD→0.9VDD - 1.5 - ns TTL: Load=10TTL, 0.4V →2.4V - 1.5 - ns CMOS: CL=15pF, 0.9VDD→0.1VDD - 1.5 - ns TTL: Load=10TTL, 2.4V →0.4V - 1.5 - ns CMOS: CL=15pF @ 0.5VDD 45 - 55 % TTL: Load=10TTL, 1.4V 45 - 55 % tplz f0=4MHz, CL=15pF - - 100 ns Output Enable Delay Time (*1) tplz f0=4MHz, CL=15pF - - 6 ms Oscillation Start Time (*1) tosc_on f0=4MHz, CL=15pF - - 6 ms *1: the values are the designed values. XC2164A51A～L (3rd Overtone) <Chip Enable> PARAMETER SYMBOL Output Rise Time (*1) tr Output Fall Time (*1) tf Output Duty Cycle DUTY Output Disable Delay Time (*1) (unless otherwise stated, VDD=3.3V or 5.0V, Ta=-30~+80℃) CONDITIONS MIN. TYP. MAX. UNITS CMOS: CL=15pF, 0.1VDD→0.9VDD - 1.5 - ns TTL: Load=10TTL, 0.4V →2.4V - 1.5 - ns CMOS: CL=15pF, 0.9VDD→0.1VDD - 1.5 - ns TTL: Load=10TTL, 2.4V →0.4V - 1.5 - ns CMOS: CL=15pF @ 0.5VDD 45 - 55 % TTL: Load=10TTL, 1.4V 45 - 55 % tplz f0=20MHz, CL=15pF - - 100 ns Output Enable Delay Time (*1) tplz f0=20MHz, CL=15pF - - 6 ms Oscillation Start Time (*1) tosc_on f0=20MHz, CL=15pF - - 6 ms *1: the values are the designed values. XC2164K51M, T, V (Fundamental) <Output Enable> (unless otherwise stated, VDD=3.3V or 5.0V, Ta=-30~+80℃) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Output Rise Time (*1) tr CMOS: CL=15pF, 0.1VDD→0.9VDD - 1.5 - ns TTL: Load=10TTL, 0.4V →2.4V - 1.5 - ns Output Fall Time (*1) tf CMOS: CL=15pF, 0.9VDD→0.1VDD - 1.5 - ns TTL: Load=10TTL, 2.4V →0.4V - 1.5 - ns Output Duty Cycle DUTY CMOS: CL=15pF @ 0.5VDD 45 - 55 % TTL: Load=10TTL, 1.4V 45 - 55 % Output Disable Delay Time (*1) tplz f0=4MHz, CL=15pF - - 100 ns Output Enable Delay Time (*1) tplz f0=4MHz, CL=15pF - - 10 μs Oscillation Start Time (*1) tosc_on f0=4MHz, CL=15pF - - 6 ms *1: the values are the designed values. * The values shown are preliminary so that the values may be changed without a prior announcement. 1691 XC2164 Series ■SWITCHING WAVEFORMS ● Switching Time (1) CMOS Output (2) TTL Output ● Duty Cycle (1) CMOS Output (2) TTL Output 1692 XC2164 Series ■SWITCHING WAVEFORMS(Continued) (3) Output Disable Delay Time, Output Enable Delay Time *) / INH pin input waveform: less than tr=tf=10ns, VDD Input (4) Oscillation Start Time: tosc_on *) VDD pin input waveform : less than tr=tf=10ns,/INH=Open 1693