SPICE MODEL: BC847AT BC857BT BC857CT Pb BC857AT, BT, CT Lead-free PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · Epitaxial Die Construction · · · Ultra-Small Surface Mount Package Complementary NPN Types Available (BC847AT, BT, CT) SOT-523 A Lead Free/RoHS Compliant (Note 2) C Qualified to AEC-Q101 Standards for High Reliability B C TOP VIEW Mechanical Data E B · · Case: SOT-523 G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 H · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · K M Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). J D L Terminal Connections: See Diagram Marking Codes (See Table Below & Diagrams on Page 2) Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approximate) Type Marking BC857AT 3V BC857BT 3W BC857CT 3G Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Pd Collector Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30275 Rev. 8 - 2 1 of 3 www.diodes.com BC857AT, BT, CT ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 3) Characteristic V(BR)CBO -50 — — V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1mA, IC = 0 hFE 125 220 420 — 290 520 250 475 800 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — — — -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — — -700 -900 — — mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 — — — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA ICBO — — — — -15 -4.0 NA µA VCB = -30V VCB = -30V, TA = 150°C fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Output Capacitance COB — — 4.5 pF VCB = -10V, f = 1.0MHz Noise Figure NF — — 10 dB IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KW, f = 1.0KHz, BW = 200Hz DC Current Gain (Note 3) Current Gain A B C Collector-Cutoff Current (Note 3) Gain Bandwidth Product Notes: 3. Short duration pulse test used to minimize self-heating effect. Ordering Information Notes: Test Condition (Note 4) Device Packaging Shipping BC857AT-7-F SOT-523 3000/Tape & Reel BC857BT-7-F SOT-523 3000/Tape & Reel BC857CT-7-F SOT-523 3000/Tape & Reel 4. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) XXYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30275 Rev. 8 - 2 2 of 3 www.diodes.com BC857AT, BT, CT 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 200 150 100 50 IC IB = 10 0.4 0.3 TA = 25°C TA = 150°C 0.2 0.1 TA = -50°C 0 0 0 25 50 75 100 125 150 200 175 0.1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 100 1000 TA = 150°C 100 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current VCE = 5V TA = 25°C TA = -50°C 10 ft, GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN 1000 1 VCE = 5V 100 10 1 10 1 100 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30275 Rev. 8 - 2 3 of 3 www.diodes.com BC857AT, BT, CT