DIODES BC858CW

BC856AW - BC858CW
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Ideally Suited for Automated Insertion
Complementary NPN Types Available (BC846W-BC848W)
For Switching and AF Amplifier Applications
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
A
SOT-323
C
B C
B
G
Mechanical Data
•
•
•
•
•
•
•
•
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E
H
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Pin Connections: See Diagram
Marking Code: See Table Below & Diagram on Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Type
BC856AW
BC856BW
BC857AW
BC857BW
Marking Code (Note 2)
Marking
Type
K3A
BC857CW
K3B
BC858AW
K3V, K3A
BC858BW
K3W, K3B
BC858CW
Maximum Ratings
M
J
D
F
L
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
0°
8°
α
All Dimensions in mm
Marking
K3G
K3J, K3A, K3V
K3K, K3B, K3W
K3L, K3G
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
K
Dim
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
VCBO
VCEO
VEBO
IC
ICM
IEM
Pd
RθJA
Tj, TSTG
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
200
625
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30251 Rev. 8 - 2
1 of 3
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BC856AW - BC858CW
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage (Note 6)
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage (Note 6)
DC Current Gain (Note 6)
Current Gain Group
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V(BR)CBO
V(BR)CEO
V(BR)EBO
A
B
C
hFE
Min
-80
-50
-30
-65
-45
-30
-5
125
220
420
Typ
—
—
—
—
—
—
—
180
290
520
-75
-250
Max
—
—
—
—
—
—
—
250
475
800
-300
-650
Unit
V
IC = 10μA, IB = 0
V
IC = 10mA, IB = 0
V
IE = 1μA, IC = 0
—
VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 6)
VCE(SAT)
—
Base-Emitter Saturation Voltage (Note 6)
VBE(SAT)
—
—
-700
-850
—
-950
mV
Base-Emitter Voltage (Note 6)
VBE(ON)
-600
—
-650
—
-750
-820
mV
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
fT
100
200
—
MHz
CCBO
—
3
4.5
pF
NF
—
—
10
dB
Collector-Cutoff Current (Note 6)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
VCE = -5.0V, IC = 200µA,
RS = 2kΩ, f = 1kHz,
Δf = 200Hz
6. Short duration pulse test used to minimize self-heating effect.
250
0.5
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
Test Condition
200
150
100
50
IC
IB = 10
0.4
0.3
T A = 25°C
0.2
TA = 150°C
0.1
T A = -50°C
0
0
25
DS30251 Rev. 8 - 2
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
0
0.1
200
2 of 3
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1,000
10
1
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
BC856AW - BC858CW
© Diodes Incorporated
1,000
TA = 150°C
VCE = 5V
ft, GAIN BANDWIDTH PRODUCT (MHz)
hFE, DC CURRENT GAIN
1,000
100
TA = 25°C
T A = -50°C
10
VCE = 5V
100
10
1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain (Group B) vs. Collector Current
Ordering Information
(Note 5 & 7)
Packaging
SOT-323
Device
BC85xxW-7-F
Notes:
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs. Collector Current
1
Shipping
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
YM
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30251 Rev. 8 - 2
3 of 3
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BC856AW - BC858CW
© Diodes Incorporated