MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA13 /MMBTA14) Ideal for Low Power Amplification and Switching High Current Gain Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) A C B • • • • • • • C E D E G Mechanical Data • • B TOP VIEW Dim A B C D E G H J K L M H Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram MMBTA63 Marking K2E, K3E See Page 3 MMBTA64 Marking K3E See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings K J D M L C SOT-23 Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 0° 8° α All Dimensions in mm E B @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Collector Current - Continuous (Note 1) IC -500 mA Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W TJ, TSTG -55 to +150 °C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Symbol Min Max Unit Test Condition Collector-Emitter Breakdown Voltage V(BR)CEO -30 ⎯ V IC = -100μA VBE = 0V Collector Cutoff Current ICBO ⎯ -100 nA VCB = -30V, IE = 0 Emitter Cutoff Current IEBO ⎯ -100 nA VEB = -10V, IC = 0 hFE 5,000 10,000 10,000 20,000 ⎯ ⎯ IC = -10mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -1.5 V IC = -100mA, IB = -100μA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -2.0 V IC = -100mA, VCE = -5.0V fT 125 ⎯ MHz VCE = -5.0V, IC = -10mA, f = 100MHz ON CHARACTERISTICS (Note 2) DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30055 Rev. 8 - 2 1 of 3 www.diodes.com MMBTA63 / MMBTA64 © Diodes Incorporated 400 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 0 25 50 75 100 125 150 175 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature VBE(ON), BASE EMITTER VOLTAGE (V) 10,000,000 hFE, DC CURRENT GAIN 1,000,000 100,000 10,000 1,000 100 1 10 100 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current DS30055 Rev. 8 - 2 2 of 3 www.diodes.com MMBTA63 / MMBTA64 © Diodes Incorporated Ordering Information (Note 5) Device MMBTA63-7-F MMBTA64-7-F Notes: Packaging Shipping SOT-23 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information KxE Date Code Key Year KxE = Product Type Marking Code, ex: K2E = MMBTA63 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30055 Rev. 8 - 2 3 of 3 www.diodes.com MMBTA63 / MMBTA64 © Diodes Incorporated