INTEGRATED CIRCUITS DATA SHEET TDA8542TS 2 × 0.7 W BTL audio amplifier Product specification Supersedes data of 1997 Nov 17 File under Integrated Circuits, IC01 1998 Mar 25 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS FEATURES GENERAL DESCRIPTION • Flexibility in use The TDA8542TS is a two channel audio power amplifier for an output power of 2 × 0.7 W with a 16 Ω load at a 5 V supply. At a low supply voltage of 3.3 V an output power of 0.6 W with an 8 Ω load can be obtained. The circuit contains two Bridge-Tied Load (BTL) amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The TDA8542TS is available in a SSOP20 package. • Few external components • Low saturation voltage of output stage • Gain can be fixed with external resistors • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops APPLICATIONS • High supply voltage ripple rejection • Protected against electrostatic discharge • Portable consumer products • Outputs short-circuit safe to ground, VCC and across the load • Motor-driver (servo). • Personal computers • Thermally protected. QUICK REFERENCE DATA SYMBOL PARAMETER VCC supply voltage Iq quiescent current Istb standby current Po output power THD total harmonic distortion SVRR supply voltage ripple rejection CONDITIONS VCC = 5 V MIN. TYP. MAX. UNIT 2.2 5 18 V − 15 22 mA − − 10 µA 0.55 − W THD = 10%; RL = 8 Ω; VCC = 3.3 V 0.45 THD = 10%; RL = 16 Ω; VCC = 5 V 0.6 0.7 − W Po = 0.4 W − 0.15 − % 50 − − dB ORDERING INFORMATION TYPE NUMBER TDA8542TS 1998 Mar 25 PACKAGE NAME DESCRIPTION SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm 2 VERSION SOT266-1 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS BLOCK DIAGRAM VCCL VCCR handbook, full pagewidth 11 20 − INL− INL+ 17 16 18 − + OUTL− R n.c. n.c. n.c. n.c. n.c. 2 VCCL R 7 9 − − 12 19 20 kΩ 3 OUTL+ + 20 kΩ STANDBY/MUTE LOGIC TDA8542TS − INR− INR+ 14 15 13 − + OUTR− R VCCR R − − 20 kΩ SVR 8 OUTR+ + 5 20 kΩ MODE BTL/SE 4 6 STANDBY/MUTE LOGIC 1 10 MBK445 LGND Fig.1 Block diagram. 1998 Mar 25 3 RGND Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS PINNING SYMBOL PIN DESCRIPTION LGND 1 ground, left channel n.c. 2 not connected OUTL+ 3 positive loudspeaker terminal, left channel MODE 4 operating mode select (standby, mute, operating) SVR 5 half supply voltage, decoupling ripple rejection BTL/SE 6 BTL loudspeaker or SE headphone operation n.c. 7 not connected OUTR+ 8 positive loudspeaker terminal, right channel n.c. 9 not connected RGND 10 ground, right channel VCCR 11 supply voltage, right channel n.c. 12 not connected OUTR− 13 negative loudspeaker terminal, right channel INR− 14 negative input, right channel INR+ 15 positive input, right channel INL+ 16 positive input, left channel INL− 17 negative input, left channel OUTL− 18 negative loudspeaker terminal, left channel handbook, halfpage n.c. 19 not connected VCCL 20 supply voltage, left channel 1 20 VCCL n.c. 2 19 n.c. OUTL+ 3 18 OUTL− MODE 4 17 INL− SVR 5 16 INL+ TDA8542TS BTL/SE 6 15 INR+ n.c. 7 14 INR− OUTR+ 8 13 OUTR− n.c. 9 12 n.c. RGND 10 11 VCCR MBK453 Fig.2 Pin configuration. negative side the saturation voltage of a NPN power transistor. The total voltage loss is <1 V and with a 5 V supply voltage and with a 16 Ω loudspeaker an output power of 0.7 W can be delivered. FUNCTIONAL DESCRIPTION The TDA8542TS is a 2 × 0.7 W BTL audio power amplifier capable of delivering 2 × 0.7 W output power to a 16 Ω load at THD = 10% using a 5 V power supply. Using the MODE pin the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range from 6 to 30 dB by external feedback resistors. Mode select pin The device is in the standby mode (with a very low current consumption) if the voltage at the MODE pin is >(VCC − 0.5 V), or if this pin is floating. At a MODE voltage level of less than 0.5 V the amplifier is fully operational. In the range between 1.5 V and VCC − 1.5 V the amplifier is in mute condition. The mute condition is useful to suppress plop noise at the output caused by charging of the input capacitor. Power amplifier The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the 1998 Mar 25 LGND 4 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS not to ground, but to a voltage level of 1⁄2VCC. See Fig.4 for the application diagram. In this case the BTL/SE pin must be either at a logic LOW level or connected to ground. If the BTL/SE pin is at a LOW level, the power amplifier for the positive loudspeaker terminal is always in mute condition. Headphone connection A headphone can be connected to the amplifier using two coupling capacitors for each channel. The common GND pin of the headphone is connected to the ground of the amplifier (see Fig.13). In this case the BTL/SE pin must be either at a logic HIGH level or not connected at all. The two coupling capacitors can be omitted if it is allowed to connect the common GND pin of the headphone jack LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.3 +18 VI input voltage −0.3 VCC + 0.3 V IORM repetitive peak output current − 1 A Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Vsc AC and DC short-circuit safe voltage − 10 V Ptot total power dissipation − 1.12 W operating non-operating V QUALITY SPECIFICATION In accordance with “SNW-FQ-611-E”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient in free air VALUE UNIT 110(1) K/W Note 1. See Section “Thermal design considerations”. Table 1 Maximum ambient temperature at different conditions CONTINUOUS SINE WAVE DRIVEN VCC (V) RL (Ω) Po (W) 3.3 4 3.3 Pmax (W) Tamb(max) (°C) 2 × 0.65 1.12 27(1) 8 2 × 0.55 0.60 84 5 8 2 × 1.2 1.33 −(1) 5 16 2 × 0.70 0.80 62 Note 1. See Section “Thermal design considerations”. 1998 Mar 25 5 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS DC CHARACTERISTICS VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. VCC supply voltage operating 2.2 5 MAX. 18 UNIT V Iq quiescent current RL = ∞; note 1 − 15 22 mA Istb standby current VMODE = VCC − − 10 µA VO DC output voltage note 2 − 2.2 − V VOUT+ − VOUT− differential output voltage offset − − 50 mV IIN+, IIN− input bias current − − 500 nA VMODE input voltage mode select 0 − 0.5 V − operating VCC − 1.5 V mute 1.5 standby VCC − 0.5 − VCC V − − 20 µA IMODE input current mode select 0 < VMODE < VCC VBTL/SE input voltage BTL/SE pin single-ended 0 − 0.6 V BTL 2 − VCC V VBTL/SE = 0 − − 100 µA IBTL/SE input current BTL/SE pin Notes 1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. 2. The DC output voltage with respect to ground is approximately 1⁄2VCC. 1998 Mar 25 6 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS AC CHARACTERISTICS VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS MIN. TYP. MAX. UNIT at VCC = 5 V THD = 10%; RL = 8 Ω − 1.2 − W THD = 10%; RL = 16 Ω − 0.70 − W THD = 0.5%; RL = 8 Ω − 0.9 − W THD = 0.5%; RL = 16 Ω − 0.5 − W THD = 10%; RL = 4 Ω − 0.65 − W THD = 10%; RL = 8 Ω − 0.55 − W THD = 0.5%; RL = 4 Ω − 0.45 − W THD = 0.5%; RL = 8 Ω − 0.38 − W at VCC = 3.3 V THD total harmonic distortion Po = 0.4 W − 0.15 0.3 % Gv(cl) closed-loop voltage gain note 1 6 − 30 dB Zi(dif) differential input impedance − 100 − kΩ Vn(o) noise output voltage − − 100 µV SVRR supply voltage ripple rejection Vo(mute) output voltage in mute condition αcs channel separation note 2 note 3 50 − − dB note 4 40 − − dB note 5 − − 200 µV 40 − − dB Notes R2 1. Gain of the amplifier is 2 × ------- in test circuit of Fig.3. R1 2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of RS = 0 Ω at the input. 3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including noise. 1998 Mar 25 7 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS The thermal resistance = 110 K/W for the SSOP20; the maximum sine wave power dissipation for Tamb = 25 °C is: function of frequency was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR. The figure of the mode select voltage (Vms) as a function of the supply voltage shows three areas; operating, mute and standby. It shows, that the DC-switching levels of the mute and standby respectively depends on the supply voltage level. 150 – 25 ---------------------- = 1.14 W 110 SE application TEST AND APPLICATION INFORMATION Test conditions Because the application can be either Bridge-Tied Load (BTL) or Single-Ended (SE), the curves of each application are shown separately. For Tamb = 60 °C the maximum total power dissipation is: Tamb = 25°C if not specially mentioned, VCC = 7.5 V, f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. 150 – 60 ---------------------- = 0.82 W 110 The SE application diagram is illustrated in Fig.14. Thermal design considerations If the BTL/SE pin (pin 6) is connected to ground, the positive outputs (pins 3 and 8) will be in mute condition with a DC level of 1⁄2VCC. When a headphone is used (RL ≥ 25 Ω) the SE headphone application can be used without output coupling capacitors; load between negative output and one of the positive outputs (e.g. pin 3) as common pin. The channel separation will be less in comparison with the application using a coupling capacitor connected to ground. The ‘measured’ thermal resistance of the IC package is highly dependent on the configuration and size of the application board. Data may not be comparable between different semiconductor manufacturers because the application boards and test methods are not (yet) standardized. Also, the thermal performance of packages for a specific application may be different than presented here, because the configuration of the application boards (copper area) may be different. Philips Semiconductors uses FR-4 type application boards with 1 oz copper traces with solder coating. 150 – 60 dissipation for this PCB layout is: ---------------------- = 1.12 W 80 Increasing the value of electrolytic capacitor C3 will result in a better channel separation. Because the positive output is not designed for high output current (2 × Io) at low load impedance (≤16 Ω), the SE application with output capacitors connected to ground is advised. The capacitor value of C4/C5 in combination with the load impedance determines the low frequency behaviour. The THD as a function of frequency was measured using a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR. BTL application General remark Tamb = 25°C if not specially mentioned, VCC = 5 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. The frequency characteristic can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this creates a low-pass filter. The SSOP package has improved thermal conductivity which reduces the thermal resistance. Using a practical PCB layout (see Fig.22) with wider copper tracks to the corner pins and just under the IC, the thermal resistance from junction to ambient can be reduced to approximately 80 K/W. For Tamb = 60 °C the maximum total power The BTL application diagram is illustrated in Fig.3. The quiescent current has been measured without any load impedance. The total harmonic distortion as a 1998 Mar 25 8 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS BTL APPLICATION handbook, full pagewidth VCC 1 µF R2 R1 50 kΩ INL− 10 kΩ ViL INL+ 20 100 µF 100 nF 11 17 18 OUTL− 16 C3 47 µF RL 3 OUTL+ OUTR− 1 µF 50 kΩ R4 R3 INR− INR+ 10 kΩ ViR SVR MODE R2 Gain left = 2 × -------R1 BTL/SE TDA8542TS 14 13 15 OUTR− RL 5 8 4 6 1 OUTR+ 10 R4 Gain right = 2 × -------R3 GND MBK443 Pins 2, 7, 9, 12 and 19 are not connected. Fig.3 BTL application. MGD890 30 handbook, halfpage Iq (mA) THD (%) 20 1 10 10−1 10−2 10−2 0 0 4 8 12 20 16 VCC (V) RL = ∞. 10−1 1 Po (W) f = 1 kHz; Gv = 20 dB; VCC = 5 V; RL = 8 Ω. Fig.4 Iq as a function of VCC. 1998 Mar 25 MBK446 10 handbook, halfpage Fig.5 THD as a function of Po. 9 10 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS MBK447 10 MGD893 −60 handbook, halfpage handbook, halfpage αcs (dB) THD (%) (1) −70 1 (2) −80 (3) 10−1 −90 10−2 10 102 103 104 f (Hz) −100 10 105 102 103 104 f (Hz) 105 VCC = 5 V, Vo = 2 V, RL = 8 Ω. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. Po = 0.5 W; Gv = 20 dB; VCC = 5 V; RL = 8 Ω. Fig.7 Channel separation as a function of frequency. Fig.6 THD as a function of frequency. MGD894 −20 MBK448 2.5 handbook, halfpage handbook, halfpage SVRR (dB) Po (W) 2 −40 1.5 (1) (1) (2) (2) 1 −60 (3) 0.5 −80 10 102 103 104 f (Hz) 0 105 0 VCC = 5 V, Rs = 0 Ω, Vr = 100 mV. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. 8 VCC (V) THD = 10%. (1) RL = 8 Ω. (2) RL = 16 Ω. Fig.8 SVRR as a function of frequency. 1998 Mar 25 4 Fig.9 Po as a function of VCC. 10 12 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS MBK449 3 MBK450 3 handbook, halfpage handbook, halfpage P (W) P (W) 2 2 (2) (1) 1 1 0 0 4 0 8 VCC (V) 0 12 0.5 1 1.5 2 2.5 Po (W) (1) RL = 8 Ω. (2) RL = 16 Ω. Sine wave of 1 kHz; VCC = 5 V; RL = 8 Ω. Fig.10 Worst case power dissipation as a function of VCC. Fig.11 P as a function of Po. MGD898 10 o (V) 1 MGL210 16 handbook, halfpage handbook, V halfpage VMODE (V) 12 10−1 standby 10−2 10−3 (1) (2) 8 (3) mute 10−4 4 10−5 10−6 10−1 operating 1 10 Vms (V) 0 102 0 4 8 12 VP (V) Band-pass = 22 Hz to 22 kHz. (1) VCC = 3 V. (2) VCC = 5 V. (3) VCC = 12 V. Fig.12 Vo as a function of Vms. 1998 Mar 25 Fig.13 VMODE as a function of VP. 11 16 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS SE APPLICATION handbook, full pagewidth VCC 1 µF R2 R1 100 kΩ 10 kΩ ViL 20 INL− 11 17 INL+ 18 16 470 µF OUTR− 1 µF 3 100 kΩ OUTL+ 14 INR+ 10 kΩ RL = 8 Ω TDA8542TS INR− ViR C4 OUTL− C3 47 µF R4 R3 100 µF 100 nF 15 13 SVR 5 MODE 8 4 BTL/SE 6 R2 Gain left = -------R1 R4 Gain right = -------R3 1 C5 OUTR− OUTR+ 470 µF RL = 8 Ω 10 GND MBK444 Pins 2, 7, 9, 12 and 19 are not connected. Fig.14 Single-ended application. MGD899 10 MGD900 10 handbook, halfpage handbook, halfpage THD (%) THD (%) 1 1 (1) (2) 10−1 10−1 (3) (1) (2) (3) 10−2 10−2 10−1 1 Po (W) 10−2 10 10 f = 1 kHz, Gv = 20 dB. (1) VCC = 7.5 V, RL = 4 Ω. (2) VCC = 9 V, RL = 8 Ω. (3) VCC = 12 V, RL = 16 Ω. 103 104 f (Hz) 105 Po = 0.5 W, Gv = 20 dB. (1) VCC = 7.5 V, RL = 4 Ω. (2) VCC = 9 V, RL = 8 Ω. (3) VCC = 12 V, RL = 16 Ω. Fig.15 THD as a function of Po. 1998 Mar 25 102 Fig.16 THD as a function of frequency. 12 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS MGD901 −20 handbook, halfpage αcs (dB) MGD902 −20 handbook, halfpage −40 SVRR (dB) (1) −40 −60 (2) (1) (3) (2) −80 (4) (5) −60 (3) −100 10 102 103 104 f (Hz) 105 −80 10 Vo = 1 V, Gv = 20 dB. (1) VCC = 5 V, RL = 32 Ω, to buffer. (2) VCC = 7.5 V, RL = 4 Ω. (3) VCC = 9 V, RL = 8 Ω. (4) VCC = 12 V, RL = 16 Ω. (5) VCC = 5 V, RL = 32 Ω. 102 103 104 f (Hz) 105 RS = 0 Ω, Vripple = 100 mV. (1) Gv = 24 dB. (2) Gv = 20 dB. (3) Gv = 0 dB. Fig.17 Channel separation as a function of frequency. Fig.18 SVRR as a function of frequency. MBK451 2 MBK452 3 handbook, halfpage handbook, halfpage Po (W) P (W) 1.6 (1) 2 (2) (1) 1.2 (3) (2) (3) 0.8 1 0.4 0 0 0 4 8 12 VCC (V) 16 0 8 12 VCC (V) 16 THD = 10%. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. THD = 10%. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig.20 Worst case power dissipation as a function of VCC. Fig.19 Po as a function of VCC. 1998 Mar 25 4 13 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS MGD905 2.4 handbook, halfpage P (W) (1) 1.6 (2) (3) 0.8 0 0 0.4 0.8 1.2 Po (W) 1.6 f = 1 kHz. (1) VCC = 12 V, RL = 16 Ω. (2) VCC = 7.5 V, RL = 4 Ω. (3) VCC = 9 V, RL = 8 Ω. Fig.21 P as a function of Po. 1998 Mar 25 14 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS handbook, full pagewidth a. Top view copper layout. +VCC −OUT1 TDA 8542TS 8547TS GND +OUT1 100 µF 10 kΩ 100 nF 56 kΩ IN1 10 kΩ 1 µF 20 MODE 1 11 kΩ 11 kΩ IN2 11 TDA 10 8542/47TS 47 µF SELECT 56 kΩ CIC Nijmegen 1 µF −OUT2 +OUT2 MGK997 b. Top view components layout. Fig.22 Printed-circuit board layout (BTL). 1998 Mar 25 15 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1998 Mar 25 EUROPEAN PROJECTION 16 o Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1998 Mar 25 17 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.8 1998 Mar 25 18 Philips Semiconductors Product specification 2 × 0.7 W BTL audio amplifier TDA8542TS NOTES 1998 Mar 25 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA56 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545102/25/02/pp20 Date of release: 1998 Mar 25 Document order number: 9397 750 03351