DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PIN DESCRIPTION Code: X1p 1 base 2 emitter 3 collector 3 fpage 1 2 Top view MSB003 Fig.1 SOT23. NPN complements are BFR93 and BFR93A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − −15 V VCEO collector-emitter voltage open base − −12 V Ic DC collector current − −35 mA Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW fT transition frequency IC = −30 mA; VCE = −5 V; f = 500 MHz; Tj = 25 °C 5 − GHz Cre feedback capacitance IC = −2 mA; VCE = −5 V; f = 1 MHz 1 − pF GUM maximum unilateral power gain IC = −30 mA; VCE = −5 V; f = 500 MHz; Tamb = 25 °C 16.5 − dB F noise figure IC = −10 mA; VCE = −5 V; f = 500 MHz; Tamb = 25 °C 2.4 − dB Vo output voltage dim = −60 dB; IC = −30 mA; VCE = −5 V; RL = 75 Ω; f(p+q−r) = 493.25 MHz 300 − mV Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −15 V VCEO collector-emitter voltage open base − −12 V VEBO emitter-base voltage open collector − −2 V IC DC collector current − −35 mA ICM peak collector current f > 1 MHz − −50 mA Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 °C; (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 3 THERMAL RESISTANCE 260 K/W Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. IE = 0; VCB = −5 V − − DC current gain IC = −30 mA; VCE = −5 V 20 50 − transition frequency IC = −30 mA; VCE = −5 V; f = 500 MHz − 5 − GHz Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 0.95 − pF Ce emitter capacitance Ic = ic = 0; VEB = −0.5 V; f = 1 MHz − 1.8 − pF Cre feedback capacitance IC = −2 mA; VCE = −5 V; f = 1 MHz − 1 − pF GUM maximum unilateral power gain IC = −30 mA; VCE = −5 V; (note 1) f = 500 MHz; Tamb = 25 °C − 16.5 − dB F noise figure IC = −10 mA; VCE = −5 V; f = 500 MHz; Tamb = 25 °C − 2.4 − dB Vo output voltage see Fig.2 and note 2 − 300 − mV ICBO collector cut-off current hFE fT Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM S 21 - dB. = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. dim = −60 dB (DIN 45004B); IC = −30 mA; VCE = −5 V; RL = 75 Ω; Vp = Vo at dim = −60 dB; fp = 495.25 MHz; Vq = Vo −6 dB; fq = 503.25 MHz; Vr = Vo −6 dB; fr = 505.25 MHz; measured at f(p+q−r) = 493.25 MHz. November 1992 4 −50 UNIT nA Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 MEA382 60 handbook, halfpage 24 V handbook, halfpage h FE 560 Ω L3 390 Ω 1.2 kΩ 40 240 Ω L2 680 pF 680 pF output 75 Ω L1 680 pF 20 input 75 Ω DUT 16 Ω MEA383 10 0 10 20 30 40 –I C (mA) L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. VCE = −5 V; Tj = 25 °C. Fig.2 Intermodulation distortion test circuit. Fig.3 DC current gain as a function of collector current. MEA925 MEA381 2.0 Cc (pF) 6 handbook, halfpage handbook, halfpage fT (GHz) 1.6 4 1.2 0.8 2 0.4 0 0 0 4 8 12 16 20 0 10 20 V CB (V) IE = ie = 0; f = 1 MHz; Tj = 25 °C. VCE = −5 V; f = 500 MHz; Tj = 25 °C. Fig.4 Fig.5 Collector capacitance as a function of collector-base voltage. November 1992 5 30 –I C (mA) Transition frequency as a function of collector current. 40 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 MEA924 MEA923 8 5 handbook, halfpage handbook, halfpage F (dB) F (dB) 4 6 3 4 2 2 1 0 10 0 20 30 40 0 10 –1 50 I C (mA) 1 f (GHz) VCE = −5 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C. IC = −2 mA; VCE = −5 V; Zs = opt.; Tamb = 25 °C. Fig.6 Fig.7 Minimum noise figure as a function of collector current. November 1992 6 10 Minimum noise figure as a function of frequency. Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 November 1992 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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