ONSEMI MBT3904DW1T1G

MBT3904DW1T1G,
MBT3904DW2T1G
Dual General Purpose
Transistors
The MBT3904DW1T1G and MBT3904DW2T1G devices are a
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−363 six−leaded surface mount package. By putting two
discrete devices in one package, this device is ideal for low−power
surface mount applications where board space is at a premium.
Features
•
•
•
•
•
•
•
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MARKING
DIAGRAM
6
SOT−363/SC−88/
SC70−6
CASE 419B
6
hFE, 100−300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Electrostatic Discharge
1
XX = MA for MBT3904DW1T1G
MJ for MBT3904DW2T1G
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
(3)
ESD
(5)
(3)
Max
Unit
PD
150
mW
Thermal Resistance,
Junction−to−Ambient
RqJA
833
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
(2)
(1)
Q2
Q1
(4)
Symbol
(6)
MBT3904DW1T1
STYLE 1
THERMAL CHARACTERISTICS
Total Package Dissipation (Note 1)
TA = 25°C
(1)
Q2
(4)
HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Characteristic
(2)
Q1
Collector −Emitter Voltage
Collector Current − Continuous
1
XX MG
G
(5)
(6)
MBT3904DW2T1
STYLE 27
ORDERING INFORMATION
Device
Package
Shipping†
MBT3904DW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
MBT3904DW2T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 7
1
Publication Order Number:
MBT3904DW1T1/D
MBT3904DW1T1G, MBT3904DW2T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−
60
−
6.0
−
−
50
−
50
40
70
100
60
30
−
−
300
−
−
−
−
0.2
0.3
0.65
−
0.85
0.95
300
−
−
4.0
−
8.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
−
−
5.0
4.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
http://onsemi.com
2
MHz
pF
pF
kW
X 10− 4
−
mmhos
dB
MBT3904DW1T1G, MBT3904DW2T1G
SWITCHING CHARACTERISTICS
Symbol
Min
Max
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
Characteristic
td
−
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
−
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
ts
−
200
Fall Time
(IB1 = IB2 = 1.0 mAdc)
tf
−
50
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
DUTY CYCLE = 2%
t1
Unit
ns
ns
+3 V
+10.9 V
275
10 k
10 k
0
-0.5 V
Cs < 4 pF*
< 1 ns
1N916
-9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
3
Cs < 4 pF*
MBT3904DW1T1G, MBT3904DW2T1G
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
100
70
50
20 30 40
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
500
200
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
300
200
TIME (ns)
1.0
REVERSE BIAS VOLTAGE (VOLTS)
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Rise Time
IC/IB = 10
200
500
t′s = ts - 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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4
200
MBT3904DW1T1G, MBT3904DW2T1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
SOURCE RESISTANCE = 500 W
IC = 100 mA
2
0
0.1
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
0
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure
Figure 10. Noise Figure
40
100
5.0
10
5.0
10
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
Figure 12. Output Admittance
20
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
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5
MBT3904DW1T1G, MBT3904DW2T1G
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.1
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
+25°C TO +125°C
qVB FOR VBE(sat)
-1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
-2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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6
180 200
MBT3904DW1T1G, MBT3904DW2T1G
TYPICAL STATIC CHARACTERISTICS
1
VCE = 1 V
TA = 25°C
IC, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
1000
100
10
0.1
1
10
100
1000
10 mSec
100 mSec
0.1
1.0 Sec
Thermal
Limit
0.01
0.001
1.0 mSec
1
10
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 19. Current Gain Bandwidth Product
Figure 20. Safe Operating Area
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7
100
MBT3904DW1T1G, MBT3904DW2T1G
PACKAGE DIMENSIONS
SOT−363/SC−88/SC70−6
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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8
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For additional information, please contact your local
Sales Representative
MBT3904DW1T1/D