SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 1 0 -0.01 0 -1 400 100 200 tr IC - Collector Current (Amps) 80 -1.2 VCE=-10V VBE(sat) - (Volts) hFE - Normalised Gain (%) -1.4 40 20 -0.0001 -0.001 -0.01 -0.1 VCEO -150 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb = 25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C -0.8 PARAMETER SYMBOL MIN. UNIT CONDITIONS. V(BR)CBO -160 V IC=-100 A -0.6 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CEO -150 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100 A Collector Cut-Off Current ICBO -0.1 -10 Emitter Cut-Off Current IEBO -0.1 Collector-Emitter Saturation Voltage VCE(sat) -0.3 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo -0.0001 1 10 IC-Collector Current (A) -1.4 -0.001 -0.01 -0.1 VCE=-10V -1.0 -0.8 -0.6 -0.1 -1 -1 Single Pulse Test at Tamb=25°C 1 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100s 1V 10V 100V 1000V VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area 50 50 MAX VCB =-140V VCB =-140V, Tamb =100°C A A VEB=-4V A V IC=-100mA, IB=-10mA* -1 V IC=-100mA, IB=-10mA* -1 V IC=-100mA, VCE =-10V* IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* 300 100 10 MHz IC=-50mA, VCE =-10V f=100MHz pF VCB =-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for this device VBE - (Volts) V Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VBE(sat) v IC -0.01 UNIT -160 -1.0 hFE v IC -0.001 VALUE VCBO IC/IB=10 IC - Collector Current (Amps) -0.0001 SYMBOL Collector-Base Voltage -1 IC - Collector Current (Amps) -1.2 PARAMETER 0 Switching Speeds 100 0 -0.1 50 IC - Collector Current (Amps) VCE(sat) v IC 60 0 SOT23 ABSOLUTE MAXIMUM RATINGS. 3 - 132 3 - 131 -0.0001 600 td ns td 100 0 555 B 800 tf PARTMARKING DETAIL – VCE(sat) - (Volts) 4 3 FMMT455 -0.2 400 300 COMPLEMENTARY TYPE – -0.4 tf ns 1000 ts 5 -0.6 ts µs 500 E C IB1=IB2=IC/10 -0.8 IC/IB=10 FMMT555 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 3 – JANUARY 1996 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 1 0 -0.01 0 -1 400 100 200 tr IC - Collector Current (Amps) 80 -1.2 VCE=-10V VBE(sat) - (Volts) hFE - Normalised Gain (%) -1.4 40 20 -0.0001 -0.001 -0.01 -0.1 VCEO -150 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb = 25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C -0.8 PARAMETER SYMBOL MIN. UNIT CONDITIONS. V(BR)CBO -160 V IC=-100 A -0.6 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CEO -150 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100 A Collector Cut-Off Current ICBO -0.1 -10 Emitter Cut-Off Current IEBO -0.1 Collector-Emitter Saturation Voltage VCE(sat) -0.3 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo -0.0001 1 10 IC-Collector Current (A) -1.4 -0.001 -0.01 -0.1 VCE=-10V -1.0 -0.8 -0.6 -0.1 -1 -1 Single Pulse Test at Tamb=25°C 1 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100s 1V 10V 100V 1000V VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area 50 50 MAX VCB =-140V VCB =-140V, Tamb =100°C A A VEB=-4V A V IC=-100mA, IB=-10mA* -1 V IC=-100mA, IB=-10mA* -1 V IC=-100mA, VCE =-10V* IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* 300 100 10 MHz IC=-50mA, VCE =-10V f=100MHz pF VCB =-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for this device VBE - (Volts) V Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VBE(sat) v IC -0.01 UNIT -160 -1.0 hFE v IC -0.001 VALUE VCBO IC/IB=10 IC - Collector Current (Amps) -0.0001 SYMBOL Collector-Base Voltage -1 IC - Collector Current (Amps) -1.2 PARAMETER 0 Switching Speeds 100 0 -0.1 50 IC - Collector Current (Amps) VCE(sat) v IC 60 0 SOT23 ABSOLUTE MAXIMUM RATINGS. 3 - 132 3 - 131 -0.0001 600 td ns td 100 0 555 B 800 tf PARTMARKING DETAIL – VCE(sat) - (Volts) 4 3 FMMT455 -0.2 400 300 COMPLEMENTARY TYPE – -0.4 tf ns 1000 ts 5 -0.6 ts µs 500 E C IB1=IB2=IC/10 -0.8 IC/IB=10 FMMT555