SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT751 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 td IB1 =IB2=IC/10 tr tf ts ns ns 140 0.4 IC /I B =10 Switching time - (Volts) 0.5 0.3 V 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 120 600 100 500 80 400 60 300 COMPLEMENTARY TYPE ts PARTMARKING DETAIL tf 40 200 20 100 0 0 tr 1 I - Collector Current (Amps) VCE(sat) v IC Switching Speeds C C 1.4 225 - (Volts) IC /I B=10 0.8 V h - Gain 1.0 125 0.6 0 0.1 1 10 0.0001 0.01 0.001 0.1 1 I - Collector Current (Amps) I - Collector Current (Amps) hFE v IC VBE(sat) v IC C 10 C Single Pulse Test at Tamb=25°C 10 1.2 - (Volts) 1 1.0 VC E=2V DC 1s 100ms 10ms 1ms 100µs 0.8 V 0.1 0.6 0.01 0.4 0.0001 0.001 0.01 0.1 1 10 I - Collector Current (Amps) 0.1 1 10 VCE - Collector Emitter Voltage (V) C Safe Operating Area VBE(on) v IC FZT751 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO -80 TYP. MAX. W °C UNIT V CONDITIONS. IC=-100µA V(BR)CEO -60 V IC=-10mA* V(BR)EBO -5 V IE=100µA µA µA µA VBE(sat) -0.15 -0.45 -0.9 -0.1 -10 -0.1 0.3 0.6 -1.25 V V V VCB=-60V VCB=-60V,T =100°C VEB=-4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* ICBO amb Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) hFE 70 100 80 40 200 200 170 150 Transition Frequency fT 100 140 MHz IC=-100mA, VCE =-5V f=100MHz Switching Times ton 40 ns toff 450 ns IC=-500mA, VCC =-10V IB1=IB2=-50mA pF VCB=-10V, f=1MHz IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* 300 100 Output Capacitance 30 Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 235 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 0.01 C B ABSOLUTE MAXIMUM RATINGS. I - Collector Current (Amps) 75 E FZT651 td 0.1 VCE =2V C 700 10 175 FZT751 3 234 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT751 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 td IB1 =IB2=IC/10 tr tf ts ns ns 140 0.4 IC /I B =10 Switching time - (Volts) 0.5 0.3 V 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 120 600 100 500 80 400 60 300 COMPLEMENTARY TYPE ts PARTMARKING DETAIL tf 40 200 20 100 0 0 tr 1 I - Collector Current (Amps) VCE(sat) v IC Switching Speeds C C 1.4 225 - (Volts) IC /I B=10 0.8 V h - Gain 1.0 125 0.6 0 0.1 1 10 0.0001 0.01 0.001 0.1 1 I - Collector Current (Amps) I - Collector Current (Amps) hFE v IC VBE(sat) v IC C 10 C Single Pulse Test at Tamb=25°C 10 1.2 - (Volts) 1 1.0 VC E=2V DC 1s 100ms 10ms 1ms 100µs 0.8 V 0.1 0.6 0.01 0.4 0.0001 0.001 0.01 0.1 1 10 I - Collector Current (Amps) 0.1 1 10 VCE - Collector Emitter Voltage (V) C Safe Operating Area VBE(on) v IC FZT751 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO -80 TYP. MAX. W °C UNIT V CONDITIONS. IC=-100µA V(BR)CEO -60 V IC=-10mA* V(BR)EBO -5 V IE=100µA µA µA µA VBE(sat) -0.15 -0.45 -0.9 -0.1 -10 -0.1 0.3 0.6 -1.25 V V V VCB=-60V VCB=-60V,T =100°C VEB=-4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* ICBO amb Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) hFE 70 100 80 40 200 200 170 150 Transition Frequency fT 100 140 MHz IC=-100mA, VCE =-5V f=100MHz Switching Times ton 40 ns toff 450 ns IC=-500mA, VCC =-10V IB1=IB2=-50mA pF VCB=-10V, f=1MHz IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* 300 100 Output Capacitance 30 Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 235 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 0.01 C B ABSOLUTE MAXIMUM RATINGS. I - Collector Current (Amps) 75 E FZT651 td 0.1 VCE =2V C 700 10 175 FZT751 3 234