VISHAY S860T

S860T
Vishay Telefunken
BIPMIC – Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose for narrow and broad band IF and RF
amplifiers in commercial and industrial applications
with low power consumption. This allows to build am-
plifiers with minimal external circuitry, thus providing a
simple, cost effective way to achieve low level amplification, for example in cordless phones.
Features
D High gain (8.5 dB @900 MHz and 50 W)
D Low cost surface mount plastic package
D Few external components
D Broadband amplification
D Low operating voltage (3 V)
D Low operating current
2
1
13 579
94 9279
3
4
S860T Marking: 860
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Device current
RF input power
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 146 °C
Symbol
Ibias
Pin
Ptot
Tj
Tstg
Value
4
0
8
150
–65 to +150
Unit
mA
dBm
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Document Number 85055
Rev. 3, 20-Jan-99
Symbol
RthJA
Value
450
Unit
K/W
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S860T
Vishay Telefunken
Electrical AC Characteristics
Ibias = 3 mA , Z0 = 50 W, Tamb = 25_C, unless otherwise specified
Parameter
Power g
gain
3 dB bandwidth
Noise figure
g
Intermodulation distortion
Test Conditions
f = 900 MHz
f = 1.9 GHz
f = 900 MHz
f = 1.9 GHz
7 mV input voltage, f = 900 MHz
7 mV input voltage, f = 1.9 GHz
Device voltage
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Symbol
Gp
Gp
f3dB
F
F
IM3
IM3
Vd
Min
6
5
Typ
8.5
7.5
2.5
5.5
6.5
40
45
1.8
Max
Unit
dB
dB
GHz
dB
dB
dB
dB
V
Document Number 85055
Rev. 3, 20-Jan-99
S860T
Vishay Telefunken
Common Emitter S–Parameters
VCC = 2.4 V , Rbias = 200 W , Z0 = 50 W, Tamb = 25_C, unless otherwise specified
f/MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2400
2600
2700
2800
2900
3000
S11
LOG
ANG
MAG
dB
deg
–2.28
–2.7
–2.34
–5.4
–2.40
–8.1
–2.46
–10.3
–2.57
–13.0
–2.66
–15.5
–2.71
–17.7
–2.75
–20.2
–2.85
–22.5
–2.93
–24.9
–3.05
–27.1
–3.18
–29.7
–3.28
–32.6
–3.37
–35.0
–3.54
–37.4
–3.63
–40.4
–3.75
–43.1
–3.90
–46.1
–4.10
–49.0
–4.24
–52.2
–4.35
–55.7
–4.54
–59.1
–4.81
–62.2
–4.75
–65.7
–5.02
–72.4
–5.61
–75.7
–6.05
–80.4
–6.50
–84.4
–7.02
–89.6
–7.45
–94.6
Document Number 85055
Rev. 3, 20-Jan-99
S21
LOG
ANG
MAG
dB
deg
7.78
174.9
7.72
170.2
7.69
165.6
7.64
160.4
7.63
155.7
7.59
150.7
7.49
146.6
7.41
141.9
7.38
137.2
7.33
132.9
7.24
128.6
7.10
124.4
7.08
120.1
7.03
116.4
6.87
112.1
6.91
108.2
6.82
104.5
6.76
100.8
6.78
96.5
6.73
93.0
6.65
89.1
6.64
85.4
6.46
81.8
6.61
78.5
6.74
74.4
6.61
69.5
6.54
65.3
6.56
61.8
6.33
57.3
6.31
53.0
S12
LOG
ANG
MAG
dB
deg
–20.37
19.2
–20.00
15.3
–19.49
16.1
–19.28
18.9
–18.93
22.0
–18.39
25.4
–17.63
27.0
–16.93
27.1
–17.21
26.0
–16.42
27.6
–15.89
29.2
–15.36
29.2
–14.63
30.4
–14.18
27.5
–13.88
26.0
–13.64
24.4
–13.36
23.4
–13.03
23.0
–12.66
22.3
–12.35
20.6
–12.14
19.0
–11.98
17.7
–11.79
17.1
–11.35
16.6
–10.86
13.3
–10.64
10.7
–10.54
8.6
–10.48
6.3
–10.42
3.9
–10.38
1.8
S22
LOG
ANG
MAG
dB
deg
–2.06
–11.3
–2.54
–10.6
–2.86
–12.4
–2.88
–14.5
–2.84
–17.6
–2.84
–21.4
–3.01
–25.7
–3.40
–29.7
–3.45
–26.4
–3.62
–32.3
–3.55
–36.3
–3.67
–39.9
–3.53
–45.5
–4.22
–49.1
–4.62
–51.5
–5.03
–53.6
–5.24
–55.4
–5.26
–58.0
–5.40
–61.9
–5.75
–65.3
–6.09
–67.7
–6.34
–69.9
–6.40
–72.0
–6.31
–76.7
–6.69
–82.9
–7.13
–87.0
–7.60
–89.9
–8.10
–92.8
–8.60
–96.0
–9.11
–99.0
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S860T
Vishay Telefunken
Dimensions of S860T in mm
96 12240
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Document Number 85055
Rev. 3, 20-Jan-99
S860T
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85055
Rev. 3, 20-Jan-99
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