2N4856JAN/JANTX/JANTXV Series Vishay Siliconix N-Channel JFETs 2N4856JAN 2N4856JANTX 2N4856JANTXV 2N4857JAN 2N4857JANTX 2N4857JANTXV 2N4858JAN 2N4858JANTX 2N4858JANTXV 2N4859JAN 2N4859JANTX 2N4859JANTXV 2N4860JAN 2N4860JANTX 2N4860JANTXV 2N4861JAN 2N4861JANTX 2N4861JANTXV PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) rDS(on) Max (W) ID(off) Max (pA) tON Typ (ns) 2N4856 –4 to –10 –40 25 250 9 2N4857 –2 to –6 –40 40 250 10 2N4858 –0.8 to –4 –40 60 250 20 2N4859 –4 to –10 –30 25 250 9 2N4860 –2 to –6 –30 40 250 10 2N4861 –0.8 to –4 –30 60 250 20 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D Low On-Resistance: 2N4856 <25 W Fast Switching—tON: 4 ns High Off-Isolation—I D(off): 5 pA Low Capacitance: 3 pF Low Insertion Loss N-Channel Majority Carrier FET Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering High Radiation Tolerance Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters DESCRIPTION The 2N4856JAN/JANTX/JANTXV all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet. TO-206AA (TO-18) S 1 2 3 D G and Case Top View Document Number: 70244 S-04028—Rev. C, 04-Jun-01 www.vishay.com 7-1 2N4856JAN/JANTX/JANTXV Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (2N4856-58) . . . . . . . . . . . . . . . . . . . . . . . –40 V (2N4859-61) . . . . . . . . . . . . . . . . . . . . . . . –30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800 mW Notes a. Derate 10.3 mW/_C to TC > 25_C SPECIFICATIONS FOR 2N4856, 2N4857 AND 2N4858 (TA = 25_C UNLESS NOTED) Limits 2N4856 2N4857 2N4858 Symbol Test Conditions Typa Min V(BR)GSS IG = –1 mA , VDS = 0 V –55 –40 VGS(off) VDS = 15 V, ID = 0.5 nA –4 –10 –2 –6 –0.8 –4 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 50 175 20 100 8 80 mA Gate Reverse Current IGSS Parameter Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain Cutoff Current Drain-Source On-Voltage –40 V VGS = –20 V, VDS = 0 V Gate Operating Currentc –40 IG TA = 150_C –250 –250 –250 pA –13 –500 –500 –500 nA VDG = 15 V, ID = 10 mA –5 VDS = 15 V, VGS = –10 V 5 250 250 250 TA = 150_C 13 500 500 500 ID = 5 mA 0.25 ID = 10 mA 0.35 ID = 20 mA 0.5 ID(off) VDS(on) –5 VGS = 0 V Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 1 mA Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V pA nA 0.5 0.5 V 0.75 25 40 60 W 0.7 V 6 mS 25 mS Dynamic Common-Source Forward Transconductancec gfs Common-Source Output Conductancec gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDG = 20 V, ID = 1 mA f = 1 kHz VDS = 0 V, VGS = –10 V f = 1 MHz VDG = 10 V, ID = 10 mA f = 1 kHz 7 18 18 18 3 8 8 8 pF nV⁄ √Hz 3 Switching td(on) Turn-On Time Turn-Off Time www.vishay.com 7-2 tr tOFF VDD = 10 V, VGS(H) = 0 V See Switching Circuit 2 6 6 10 2 3 4 10 13 25 50 100 ns Document Number: 70244 S-04028—Rev. C, 04-Jun-01 2N4856JAN/JANTX/JANTXV Series Vishay Siliconix SPECIFICATIONS FOR 2N4859, 2N4860 AND 2N4861 (TA = 25_C UNLESS NOTED) Limits 2N4859 Parameter Symbol Test Conditions V(BR)GSS IG = –1 mA , VDS = 0 V VGS(off) VDS = 15 V, ID = 0.5 nA Typa Min Max 2N4860 Min Max 2N4861 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb –55 Gate Operating Currentc Drain Cutoff Current Drain-Source On-Voltage –30 –30 V IDSS –4 VDS = 15 V, VGS = 0 V 50 IGSS IG TA = 150_C –2 175 20 –6 –0.8 100 8 –4 80 mA –250 –250 –250 pA –13 –500 –500 –500 nA VDG = 15 V, ID = 10 mA –5 VDS = 15 V, VGS = –10 V 5 250 250 250 TA = 150_C 13 500 500 500 ID = 5 mA 0.25 ID = 10 mA 0.35 ID = 20 mA 0.5 ID(off) VDS(on) –10 –5 VGS = –15 V, VDS = 0 V Gate Reverse Current –30 VGS = 0 V Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V pA nA 0.5 0.5 V 0.75 25 40 60 W 0.7 V 6 mS 25 mS Dynamic Common-Source Forward Transconductancec gfs Common-Source Output Conductancec gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDG = 20 V, ID = 1 mA f = 1 kHz VDS = 0 V, VGS = –10 V f = 1 MHz VDG = 10 V, ID = 10 mA f = 1 kHz 7 18 18 18 3 8 8 8 pF nV⁄ √Hz 3 Switching td(on) Turn-On Time Turn-Off Time tr 2 VDD = 10 V, VGS(H) = 0 V See Switching Circuit tOFF Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v100 ms duty cycle v10%. c. This parameter not registered with JEDEC. Document Number: 70244 S-04028—Rev. C, 04-Jun-01 6 6 10 2 3 4 10 19 25 50 100 ns NCB www.vishay.com 7-3 2N4856JAN/JANTX/JANTXV Series Vishay Siliconix SWITCHING TIME TEST CIRCUIT 4856/4859 4857/4860 4858/4861 VGS(L) –10 V –6 V –4 V RL* 464 W 953 W 1910 W ID(on) 20 mA 10 mA 5 mA *Non-inductive INPUT PULSE SAMPLING SCOPE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF INPUT tr <20 ns tf <20 ns VIN tOFF 10% 90% OUTPUT td(on) tr VDD RL OUT VGS(H) VGS(L) 1 kΩ 51 Ω VIN Scope 51 Ω www.vishay.com 7-4 Document Number: 70244 S-04028—Rev. C, 04-Jun-01