VP2020L, BSS92 Vishay Siliconix P-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches High-Side Switching Secondary Breakdown Free: –220 V Low On-Resistance: 11.5 W Low-Power/Voltage Driven Excellent Thermal Stability Ease in Driving Switches Full-Voltage Operation Low Offset Voltage Easily Driven Without Buffer No High-Temperature “Run-Away” TO-226AA (TO-92) Device Marking Front View S 1 2 “S” VP 2020L xxyy D 2 3 “S” = Siliconix Logo xxyy = Date Code G S 1 G D TO-92-18CD (TO-18 Lead Form) Device Marking Front View “S” BS S92 xxyy “S” = Siliconix Logo xxyy = Date Code 3 Top View Top View VP2020L BSS92 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VP2020L BSS92 Drain-Source Voltage VDS –200 –200 Gate-Source Voltage VGS "20 "20 –0.12 –0.15 –0.08 –0.09 –0.48 –0.6 0.8 1.0 0.32 0.4 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 100_C PD RthJA TJ, Tstg 156 125 –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70210 S-04279—Rev. E, 16-Jun-01 www.vishay.com 11-1 VP2020L, BSS92 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP2020L Parameter Symbol Test Conditions Typa Min Max BSS92 Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –10 mA –220 VGS = 0 V, ID = –250 mA –220 VDS = VGS, ID = –1 mA –1.9 –200 –0.8 VDS = 0 V, VGS = "20 V "100 –1 VDS = –200 V, VGS = 0 V –60 Drain-Source On-Resistanceb –250 VGS = –10 V, ID = –0.1 A 11.5 VGS = –4.5 V, ID = –0.1 A 15 20 28 40 TJ = 125_C VGS = –4.5 V, ID = –0.05 A TJ = 125_C Forward Transconductanceb Diode Forward Voltage gfs VSD –0.2 VDS = –10 V, VGS = –4.5 V rDS(on) mA m –200 VDS = –60 V, VGS = 0 V ID(on) nA –100 TJ = 125_C On-State Drain Currentb V –2.8 "50 TJ = 125_C IDSS –0.8 "10 TJ = 125_C VDS = 0.8 x V(BR)DSS, VGS = 0 V Zero Gate Voltage Drain Current –2.5 –100 mA 20 W 15 28 VDS = –10 V, ID = –0.1 A 170 VDS = –25 V, ID = –0.1 A 170 IS = –0.3 A, VGS = 0 V –0.9 100 mS 60 –1.2 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –25 V, VGS = 0 V f = 1 MHz 30 70 130 10 20 30 3 10 15 6 10 8 15 18 30 17 25 pF Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) VDD = –25 V, RL = 250 W ID ^ –0.1 A, VGEN = –10 V RG = 25 W tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VPDQ20 Document Number: 70210 S-04279—Rev. E, 16-Jun-01 VP2020L, BSS92 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive –100 –500 –80 VGS = –10 V –6 V –300 –5 V –4.5 V –200 –4 V –100 –3 V ID – Drain Current (mA) ID – Drain Current (mA) –400 VGS = –4 V –3.6 V –60 –40 –3 V –20 –2 V 0 0 0 –1 –2 –3 –4 0 –5 –0.4 VDS – Drain-to-Source Voltage (V) –0.8 –1.2 –1.6 –2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage –100 20 VDS = –15 V 25_C 18 rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA) –80 –60 –40 TJ = 125_C –20 16 14 ID = –0.1 A 12 –0.05 A 10 –0.02 A –55_C 0 8 0 –1 –2 –3 –4 0 –5 –8 –12 –16 VGS – Gate-Source Voltage (V) On-Resistance Normalized On-Resistance vs. Junction Temperature 25 –20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) –4 VGS – Gate-Source Voltage (V) 20 VGS = –4.5 V 15 –10 V 10 5 0 2.00 VGS = –4.5 V ID = –0.1 A 1.75 1.50 1.25 1.00 0.75 0.50 0 –50 –100 –150 –200 VGS – Gate-Source Voltage (V) Document Number: 70210 S-04279—Rev. E, 16-Jun-01 –250 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VP2020L, BSS92 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance –10.0 120 VGS = 0 V f = 1 MHz VDS = –5 V C – Capacitance (pF) ID – Drain Current (mA) 100 –1.0 TJ = 150_C –0.1 25_C 125_C 80 60 40 Ciss 20 –55_C –0.01 Coss Crss 0 0 –1.0 –2.0 –3.0 –3.5 0 –10 VGS – Gate-to-Source Voltage (V) –20 –30 Gate Charge –50 Load Condition Effects on Switching –12 100 VDD = –25 V RG = 25 W VGS = 0 to –10 V tf ID = –0.1 A –10 td(off) t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) –40 VDS – Drain-to-Source Voltage (V) –8 VDS = –100 V –6 –160 V –4 10 tr td(on) –2 1 0 0 0.5 1.0 1.5 2.0 2.5 –10 –100 –1000 ID – Drain Current (A) Qg – Total Gate Charge (nC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1.0 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70210 S-04279—Rev. E, 16-Jun-01