ONSEMI MCR718T4

MCR716, MCR718
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
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SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
Features
•
•
•
•
•
•
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Surface Mount Lead Form − Case 369C
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
G
A
K
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage
(Note 1) (TJ = −40 to 110°C, Sine
Wave, 50 to 60 Hz, Gate Open)
MCR716
MCR718
VDRM,
VRRM
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS)
4.0
Average On−State Current
(180° Conduction Angles; TC = 90°C)
IT(AV)
2.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 110°C)
ITSM
25
A
2.6
A2sec
Circuit Fusing Consideration
(t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 90°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
4
V
1 2
3
400
600
I2t
YWW
MC
R71x
DPAK
CASE 369C
STYLE 4
A
PGM
0.5
W
PG(AV)
0.1
W
Y
WW
x
= Year
= Work Week
= 6 or 8
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 90°C)
IGM
0.2
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Operating Junction Temperature Range
TJ
−40 to +110
°C
Preferred devices are recommended choices for future use
and best overall value.
Storage Temperature Range
Tstg
−40 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
MCR716/D
MCR716, MCR718
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RJC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RJA
80
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Peak Repetitive Forward or Reverse Blocking Current; RGK = 1 k (Note 3)
(VAK = Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
IDRM
IRRM
Min
Typ
Max
−
−
−
−
10
200
Unit
OFF CHARACTERISTICS
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage
(IGR = 10 A)
VRGM
10
12.5
18
V
Peak Reverse Gate Blocking Current
(VGR = 10 V)
IRGM
−
−
1.2
A
Peak Forward On−State Voltage (Note 4)
(ITM = 5.0 A Peak)
(ITM = 8.2 A Peak)
VTM
−
−
1.3
1.5
1.5
2.2
1.0
−
25
−
75
300
0.3
−
0.2
0.55
−
−
0.8
1.0
−
0.4
−
1.0
−
5.0
10
−
−
−
−
5.0
10
Gate Trigger Current (Continuous dc) (Note 5)
(VD = 12 Vdc, RL = 30 Ohms)
V
A
IGT
TC = 25°C
TC = −40°C
Gate Trigger Voltage (Continuous dc) (Note 5)
(VD = 12 Vdc, RL = 30 Ohms)
VGT
TC = 25°C
TC = −40°C
TC = 110°C
Holding Current (Note 3)
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
V
IH
TC = 25°C
TC = −40°C
mA
Latching Current (Note 3)
(VD = 12 Vdc, IG = 2.0 mA, TC = 25°C)
(VD = 12 Vdc, IG = 2.0 mA, TC = −40°C)
IL
mA
Total Turn-On Time
(Source Voltage = 12 V, RS = 6 k, IT = 8 A(pk), RGK = 1 k)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
tgt
−
2.0
5.0
s
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, RGK = 1 k, Exponential Waveform,
TJ = 110°C)
dv/dt
5.0
10
−
V/s
Repetitive Critical Rate of Rise of On−State Current
(f = 60 Hz, IPK = 30 A, PW = 100 s, dIG/dt = 1 A/s)
di/dt
−
−
100
A/s
DYNAMIC CHARACTERISTICS
2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or RGK = 1 k. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%.
5. RGK current not included in measurements.
ORDERING INFORMATION
Package
Shipping†
MCR716T4
DPAK
16 mm Tape & Reel (2.5 k / Reel)
MCR718T4
DPAK
16 mm Tape & Reel (2.5 k / Reel)
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR716, MCR718
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off−State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off−State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On−State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
110
30°C
P(AV), AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
Anode −
60°C
90°C
120°C
180°C
105
DC
95
100
0
1.0
2.0
3.0
5.0
4.0
180°C
DC
2.0
1.0
0
0
1.0
2.0
3.0
4.0
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
Typical @ TJ = 25°C
10
Maximum @ TJ = 25°C
1.0
0.5
90°C
120°C
3.0
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Maximum @ TJ = 110°C
0.1
30°C
60°C
4.0
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
IT, INSTANTANEOUS ON−STATE CURRENT (AMPS)
100
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.0
ZJC(t) = RJC(t)•r(t)
0.1
0.01
0.1
1.0
10
100
1000
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
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3
5.0
10,000
MCR716, MCR718
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT ( A)
35
30
0.5
25
20
15
−40
−20
0
20
40
60
80
0
100 110
−20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
2.0
IL , LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
−40
1.5
1.0
0.5
0
−40
−20
0
20
40
60
80
1.5
1.0
0.5
0
−40
100 110
−20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
MCR716, MCR718
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
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5
mm inches
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MCR716, MCR718
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
MCR716/D