ONSEMI NIF62514

NIF62514
Preferred Device
Self−protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.
6.0 AMPERES*
40 VOLTS CLAMPED
RDS(on) = 90 m
Drain
Gate
Input
Features
•
•
•
•
•
•
•
•
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Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low RDS(on)
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
RG
Overvoltage
Protection
MPWR
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain-to-Source Voltage Internally Clamped
VDSS
40
Vdc
SOT-223
CASE 318E
STYLE 3
Drain-to-Gate Voltage Internally Clamped
(RGS = 1.0 M)
VDGR
40
Vdc
MARKING DIAGRAM
VGS
16
Vdc
Rating
Gate-to-Source Voltage
- Continuous @ TA = 25°C
- Continuous @ TA = 100°C
- Pulsed (tp ≤ 10 s)
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TA = 25°C (Note 3)
ID
ID
Internally Limited
IDM
PD
W
3
DRAIN
(Top View)
RJT
RJA
RJA
14
114
72.3
°C/W
Single Pulse Drain- to- Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH,
RG = 25 )
EAS
300
mJ
TJ, Tstg
DRAIN
SOURCE
1.1
1.73
8.93
Thermal Resistance
- Junction-to-Tab
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Operating and Storage Temperature Range
4
2
62514
LWW
Drain Current
1
GATE
-55 to
150
1. Mounted onto min pad board.
2. Mounted onto 1″ pad board.
3. Mounted onto large heatsink.
°C
62514
L
WW
= Specific Device Code
= Location Code
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NIF62514T1
SOT-223
1000/Tape & Reel
NIF62514T3
SOT-223
4000/Tape & Reel
*Limited by the current limit circuit.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 3
1
Publication Order Number:
NIF62514/D
NIF62514
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-to-Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
(VGS = 0 Vdc, ID = 250 Adc, TJ = 150°C)
V(BR)DSS
42
42
46
45
50
50
Vdc
-
0.5
2.0
2.0
10
-
50
550
100
1000
1.0
-
1.7
4.0
2.0
6.0
-
90
165
100
190
-
105
185
120
210
VSD
-
1.05
-
V
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
(VGS = -5.0 Vdc, VDS = 0 Vdc)
IGSS
Adc
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C)
RDS(on)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C)
RDS(on)
Source-Drain Forward On Voltage
(IS = 7 A, VGS = 0 V)
Vdc
mV/°C
m
m
SWITCHING CHARACTERISTICS
Turn-on Delay Time
10% Vin to 10% ID
RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V
td(on)
-
4.0
8.0
s
Turn-on Rise Time
10% ID to 90% ID
RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V
trise
-
11
20
s
Turn-of f Delay Time
90% Vin to 90% ID
RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V
td(off)
-
32
50
s
Turn-of f Fall Time
90% ID to 10% ID
RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V
tfall
-
27
50
s
Slew-Rate On
RL = 4.7 ,
Vin = 0 to 10 V, VDD = 12 V
-dV DS/dton
-
1.5
2.5
s
Slew-Rate Off
RL = 4.7 ,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
-
0.6
1.0
s
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
(VGS = 5.0 Vdc)
(VGS = 5.0 Vdc, TJ = 150°C)
ILIM
6.0
3.0
9.0
5.0
11
8.0
Adc
Current Limit
(VGS = 10 Vdc)
(VGS = 10 Vdc, TJ = 150°C)
ILIM
7.0
4.0
10.5
7.5
13
10
Adc
Temperature Limit (Turn-of f)
VGS = 5.0 Vdc
TLIM(off)
150
175
200
°C
Temperature Limit (Circuit Reset)
VGS = 5.0 Vdc
TLIM(on)
135
160
185
°C
Temperature Limit (Turn-of f)
VGS = 10 Vdc
TLIM(off)
150
155
185
°C
Temperature Limit (Circuit Reset)
VGS = 10 Vdc
TLIM(on)
130
140
170
°C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro-Static Discharge Capability
Human Body Model (HBM)
ESD
4000
-
-
V
Electro-Static Discharge Capability
Machine Model (MM)
ESD
400
-
-
V
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
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2
NIF62514
TYPICAL ELECTRICAL CHARACTERISTICS
8
12
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ = 150°C
VGS = 10 V
10
7V
6V
8
5V
4V
6
4
3V
2
7
VGS = 10 V
6
0
2
1
4
3
4
4V
3
3V
2
1
0
6
5
1
0
5
4
6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
12
VGS = 10 V
ID, DRAIN CURRENT (AMPS)
12
7V
6V
10
5V
8
4V
6
TJ = -40°C
4
2
3V
VDS = 5 V
TJ = -40°C
10
8
6
TJ = 25°C
4
TJ = 150°C
2
0
0
0
2
1
4
3
0
6
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (m)
VGS = 10 V
ID = 1.4 A
200
175
150
Maximum
125
100
75
Typical
50
25
0
-50
-25
0
25
50
75
100
1
1.5
2
2.5
3
3.5
4
4.5
5
Figure 4. Transfer Characteristics
250
225
0.5
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 3. Output Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (m)
3
2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
14
ID, DRAIN CURRENT (AMPS)
6V
5V
TJ = 25°C
0
7V
5
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Drain-to-Source Resistance versus
Junction Temperature
250
225
VGS = 5 V
ID = 1.4 A
200
175
Maximum
150
125
100
Typical
75
50
25
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Resistance versus
Junction Temperature
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3
2.50
4
GATE THRESHOLD VOLTAGE (V)
IDSS, DRAIN-TO-SOURCE LEAKAGE
CURRENT (A)
NIF62514
VDS = 32 V
3
2
1
Typical
0
-50
-25
0
25
50
75
100
125
ID = 150 A
2.25
2.00
VTH + 4 Sigma
VTH
1.75
1.50
VTH - 4 Sigma
1.25
1.00
0.75
0.50
0.25
0
-50 -30
150
-10
30
10
50
70
90
110 130 150
TJ, JUNCTION TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 7. Drain-to-Source Resistance versus
Junction Temperature
Figure 8. Gate Threshold Voltage versus
Temperature
12
DRAIN CURRENT (AMPS)
Current Limit
10
VGS = 10 V
Temperature Limit
8
6
VGS = 5 V
4
2
0
0
1
2
3
4
5
TIME (ms)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 9. Short-circuit Response
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
P(pk)
0.02
1
0.01
t1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.1
0.00001
0.0001
0.001
0.01
t,TIME (S)
0.1
D CURVES APPLY
FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) - TA = P(pk) RJA(t)
RJC R(t) for t ≤ 0.02
s
1
10
Figure 10. Transient Thermal Resistance
(Non-normalized Junction-to-Ambient mounted on minimum pad area)
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4
NIF62514
PACKAGE DIMENSIONS
SOT-223
CASE 318E-04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
H
M
K
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5
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
NIF62514
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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NIF62514/D