NTB25P06 Power MOSFET −60 V, −27.5 A, P−Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http://onsemi.com • Pb−Free Packages are Available Typical Applications • • • • PWM Motor Controls Power Supplies Converters Bridge Circuits V(BR)DSS RDS(on) TYP ID MAX −60 V 65 m @ −10 V −27.5 A P−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) VGS VGSM 15 20 V Vpk ID A Apk Rating Drain Current − Continuous @ TA = 25°C − Single Pulse (tp10 s) IDM 27.5 80 Total Power Dissipation @ TA = 25°C PD 120 W TJ, Tstg −55 to +175 °C EAS 600 mJ Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, IL(pk) = 20 A, L = 3 mH, RG = 25 ) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) G S 4 MARKING DIAGRAM & PIN ASSIGNMENT Drain 1 2 3 NTB25P06 YWW D2PAK CASE 418B STYLE 2 Drain Gate °C/W RJC RJA RJA 1.25 46.8 63.2 TL 260 Source NTB25P06 = Device Code Y = Year WW = Work Week °C ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in2). Package Shipping† D2PAK 50 Units/Rail NTB25P06G D2PAK (Pb−Free) 50 Units/Rail NTB25P06T4 D2PAK 800/Tape & Reel NTB25P06T4G D2PAK 800/Tape & Reel Device NTB25P06 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 2 1 Publication Order Number: NTB25P06/D NTB25P06 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −60 − − 64 − − − − − − −10 −100 − − ±100 −2.0 − −2.8 6.2 −4.0 − − − 0.065 0.070 0.075 0.082 − 13 − Ciss − 1200 1680 Coss − 345 480 Crss − 90 180 td(on) − 14 24 ns tr − 72 118 ns td(off) − 43 68 ns tf − 190 320 ns QT − 33 50 nC Q1 − 6.5 − Q2 − 15 − VSD − − −1.8 −1.4 −2.5 − V trr − 70 − ns ta − 50 − tb − 20 − QRR − 0.2 − OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = −250 A) (Positive Temperature Coefficient) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 V, VDS = −60 V, TJ = 25°C) (VGS = 0 V, VDS = −60 V, , TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 15 V, VDS = 0 V) IGSS V mV/°C A nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = −250 A) (Negative Threshold Temperature Coefficient) VGS(th) Static Drain−Source On−State Resistance (VGS = −10 V, ID = −12.5 A) (VGS = −10 V, ID = −25 A) RDS(on) Forward Transconductance (VDS = −10 V, ID = −12.5 A) V mV/°C gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −25 V, VGS = 0 V, F = 1.0 MHz) Reverse Transfer Capacitance pF SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −30 V, ID = −25 A, VGS = −10 V RG = 9.1 ) Fall Time Gate Charge (VDS = −48 V, ID = −25 A, VGS = −10 V) BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage (IS = −25 A, VGS = 0 V) (IS = −25 A, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = −25 A, VGS = 0 V, dIS/dt = 100 A/s) Reverse Recovery Stored Charge 3. Indicates Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTB25P06 VGS = −10 V −ID, DRAIN CURRENT (AMPS) 45 50 TJ = 25°C −7 V −8 V −9 V −ID, DRAIN CURRENT (AMPS) 50 40 35 30 −6 V 25 20 −5.5 V 15 −5 V 10 −4.5 V −4.2 V 5 VDS ≥ 10 V TJ = 25°C 40 TJ = −55°C 30 TJ = 125°C 20 10 0 0 0 2 4 6 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2 10 4 6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.2 VGS = −10 V 0.15 TJ = 125°C 0.1 TJ = 25°C TJ = −55°C 0.05 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 10 20 30 40 50 0.095 TJ = 25°C 0.085 VGS = −10 V 0.075 VGS = −15 V 0.065 10 20 30 40 50 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 1.75 VGS = 0 V ID = −25 A VGS = −10 V −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics 8 1.5 1.25 1 1000 TJ = 150°C 100 TJ = 125°C 0.75 0.5 −50 10 −25 0 25 50 75 100 125 150 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 3000 2500 C, CAPACITANCE (pF) VGS = 0 V VDS = 0 V TJ = 25°C Ciss 2000 Crss 1500 Ciss 1000 Coss 500 Crss 0 10 5 −VGS 0 −VDS 5 10 15 20 25 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTB25P06 10 QT VDS 8 Q1 6 4 2 ID = −25 A TJ = 25°C 0 0 4 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 25 30 35 −IS, SOURCE CURRENT (AMPS) 25 tr t, TIME (ns) 20 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 100 tf td(off) td(on) 10 VDD = −30 V ID = −25 A VGS = −10 V 1 10 100 VGS = 0 V TJ = 25°C 20 15 10 5 0 0 0.25 RG, GATE RESISTANCE () VGS = −20 V SINGLE PULSE TC = 25°C 100 dc 10 ms 1 ms 1 0.1 0.1 RDS(on) Limit Thermal Limit Package Limit 1 0.75 1 1.25 1.5 1.75 100 s 10 100 Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 1000 10 0.5 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance −ID, DRAIN CURRENT (AMPS) 15 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1 VGS Q2 600 ID = −25 A 500 400 300 200 100 0 25 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTB25P06 PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE H C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R P STYLE 2: PIN 1. 2. 3. 4. U L M W J G L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB25P06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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