ONSEMI MMBTA56WT1G

MMBTA56WT1G
Driver Transistor
PNP Silicon
Features
 Moisture Sensitivity Level: 1
 ESD Rating: Human Body Model - 4 kV
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Machine Model - 400 V
 These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Symbol
Value
Unit
Collector -- Emitter Voltage
Rating
VCEO
--80
Vdc
Collector -- Base Voltage
VCBO
--80
Vdc
Emitter -- Base Voltage
VEBO
--4.0
Vdc
IC
--500
mAdc
Collector Current -- Continuous
2
EMITTER
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR--5 Board
TA = 25C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
2
Symbol
Max
Unit
PD
150
mW
RθJA
833
C/W
TJ, Tstg
-- 55 to +150
C
SC-- 70 (SOT-- 323)
CASE 419
STYLE 3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
FM M G
G
1
FM
M
G
= Device Code
= Date Code*
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMBTA56WT1G
Package
Shipping†
SC--70
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 2
1
Publication Order Number:
MMBTA56WT1/D
MMBTA56WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector -- Emitter Breakdown Voltage (Note 1)
(IC = --1.0 mAdc, IB = 0)
V(BR)CEO
--80
--
Vdc
Emitter -- Base Breakdown Voltage
(IE = --100 mAdc, IC = 0)
V(BR)EBO
--4.0
--
Vdc
Collector Cutoff Current
(VCE = --60 Vdc, IB = 0)
ICES
--
--0.1
mAdc
Collector Cutoff Current
(VCB = --60 Vdc, IE = 0)
(VCB = --80 Vdc, IE = 0)
ICBO
---
---0.1
100
100
---
OFF CHARACTERISTICS
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = --10 mAdc, VCE = --1.0 Vdc)
(IC = --100 mAdc, VCE = --1.0 Vdc)
hFE
--
Collector -- Emitter Saturation Voltage
(IC = --100 mAdc, IB = --10 mAdc)
VCE(sat)
--
--0.25
Vdc
Base -- Emitter On Voltage
(IC = --100 mAdc, VCE = --1.0 Vdc)
VBE(on)
--
--1.2
Vdc
fT
50
--
MHz
SMALL-- SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product (Note 2)
(IC = --100 mAdc, VCE = --1.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-- ON TIME
- 1.0 V
5.0 ms
100
+10 V
0
Vin
tr = 3.0 ns
TURN-- OFF TIME
VCC
+40 V
RL
100
OUTPUT
Vin
RB
* CS < 6.0 pF
5.0 mF
VCC
+VBB
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
OUTPUT
* CS < 6.0 pF
100
5.0 ms
RL
RB
5.0 mF
100
+40 V
200
100
VCE = - 2.0 V
TJ = 25C
50
C, CAPACITANCE (pF)
100
70
50
- 5.0 - 7.0 - 10
- 20
- 30
- 50 - 70 - 100
5.0
- 0.1 - 0.2
- 200
- 5.0
- 10
- 1.0 k
- 700
- 500
ts
100 ms
1.0 ms
- 300
VCC = - 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
- 20 - 30
- 50 - 70 - 100
TA = 25C
- 100
- 70
- 50
tr
td @ VBE(off) = - 0.5 V
- 200 - 300
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
- 30
- 20
- 10
- 500
- 1.0
IC, COLLECTOR CURRENT (mA)
- 1.0
VCE = - 1.0 V
- 20 - 30
- 50 - 70 - 100
- 55C
80
TJ = 25C
- 0.8
V, VOLTAGE (VOLTS)
25C
VBE(sat) @ IC/IB = 10
- 0.6
VBE(on) @ VCE = - 1.0 V
- 0.4
- 0.2
60
40
- 0.5 - 1.0 - 2.0
- 5.0 - 7.0 - 10
Figure 5. Active--Region Safe Operating Area
400
200
- 2.0 - 3.0
VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Time
TJ = 125C
1.0 s
TC = 25C
- 200
tf
- 50 - 100
- 20
Figure 3. Capacitance
10
- 5.0 - 7.0 - 10
h FE, DC CURRENT GAIN
- 2.0
Figure 2. Current--Gain — Bandwidth Product
200
100
- 0.5 - 1.0
VR, REVERSE VOLTAGE (VOLTS)
300
20
Cobo
10
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
t, TIME (ns)
20
7.0
20
- 2.0 - 3.0
30
Cibo
30
30
100
70
50
TJ = 25C
70
I C , COLLECTOR CURRENT (mA)
f T , CURRENT-- GAIN - BANDWIDTH PRODUCT (MHz
MMBTA56WT1G
VCE(sat) @ IC/IB = 10
- 5.0 - 10
- 20
- 50
- 100 - 200
0
- 0.5
- 500
- 1.0 - 2.0
- 5.0
- 10
- 20
- 50
- 100 - 200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
Figure 7. “ON” Voltages
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3
- 500
- 1.0
R θVB , TEMPERATURE COEFFICIENT (mV/ C)
VCE , COLLECTOR-- EMITTER VOLTAGE (VOLTS)
MMBTA56WT1G
TJ = 25C
- 0.8
IC =
- 100 mA
IC =
- 50 mA
IC =
- 250 mA
IC =
- 500 mA
- 0.6
- 0.4
- 0.2
IC =
- 10 mA
0
- 0.05 - 0.1 - 0.2
- 0.5
- 1.0
- 2.0
- 5.0
- 10
- 20
- 50
- 0.8
- 1.2
- 1.6
- 2.0
RθVB for VBE
- 2.4
- 2.8
- 0.5 - 1.0 - 2.0
- 5.0
- 10
- 20
- 50
- 100 - 200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region
Figure 9. Base--Emitter Temperature
Coefficient
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4
- 500
MMBTA56WT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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MMBTA56WT1/D