MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 VCEO Collector −Base Voltage MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 VCBO Emitter −Base Voltage VEBO Collector Current − Continuous Electrostatic Discharge Value Unit 60 80 1 SOT−23 CASE 318 STYLE 6 60 80 4.0 Vdc IC 500 mAdc ESD HBM Class 3B MM Class C CDM Class IV MARKING DIAGRAMS 1H M G G Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature © Semiconductor Components Industries, LLC, 2012 1GM M G G MMBTA05LT1 MMBTA06LT1, SMMBTA06L 1H, 1GM = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. July, 2012 − Rev. 8 2 Vdc THERMAL CHARACTERISTICS Characteristic 3 Vdc 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MMBTA05LT1/D MMBTA05L, MMBTA06L, SMMBTA06L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 60 80 − − V(BR)EBO 4.0 − Vdc ICES − 0.1 mAdc − − 0.1 0.1 100 100 − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MMBTA05 MMBTA06, SMMBTA06 Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc ICBO MMBTA05 MMBTA06, SMMBTA06 mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) − Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.25 Vdc Base −Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 100 − MHz SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 OUTPUT +10 V 0 tr = 3.0 ns OUTPUT RB Vin RB Vin * CS t 6.0 pF 5.0 mF RL * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 MMBTA05L, MMBTA06L, SMMBTA06L 100 C, CAPACITANCE (pF) 100 10 1 10 100 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 2. Current Gain Bandwidth Product vs. Collector Current Figure 3. Capacitance 1000 TA = 150°C ts 200 100 70 50 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr 100 td @ VBE(off) = 0.5 V 5.0 7.0 10 20 30 50 70 100 200 300 VCE = 1.0 V TA = 25°C TA = −55°C 10 0.1 500 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain vs. Collector Current 1000 1.2 1 1.1 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) Cobo IC, COLLECTOR CURRENT (mA) 300 t, TIME (ns) 10 1000 1.0 k 700 500 10 TA = 25°C Cibo VCE = 2.0 V TA = 25°C hfe, DC CURRENT GAIN ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 TA = 150°C 0.1 TA = 25°C TA = −55°C 0.01 0.1 1 10 100 1.0 0.9 TA = −55°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 0.3 1000 IC/IB = 10 0.2 0.1 IC, COLLECTOR CURRENT (mA) TA = 150°C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 RqVB, TEMPERATURE COEFFICIENT (mV/°C) 1.0 1.1 1 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) MMBTA05L, MMBTA06L, SMMBTA06L TA = −55°C 0.9 0.8 TA = 25°C 0.7 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 0.1 1 10 100 IC = 500 mA 0.6 IC = 10 mA 0.4 0.2 0.1 1 10 IB, BASE CURRENT (mA) Figure 8. Base Emitter Turn−ON Voltage vs. Collector Current Figure 9. Saturation Region IC, COLLECTOR CURRENT (mA) 10000 −1.2 MMBTA06L 100 ms 1000 −1.6 RqVB for VBE −2.4 1.0 2.0 5.0 10 20 50 100 200 10 ms 1 ms 1s Thermal Limit 100 10 Single Pulse at TA = 25°C 1 500 100 0.1 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Base−Emitter Temperature Coefficient Figure 11. Safe Operating Area 10000 IC, COLLECTOR CURRENT (mA) −2.8 0.5 TA = 25°C IC = 250 mA IC, COLLECTOR CURRENT (mA) −0.8 −2.0 0.8 0 0.01 1000 IC = 100 mA IC = 50 mA MMBTA05L 100 ms 10 ms 1000 1 ms 1s 100 Thermal Limit 10 1 Single Pulse at TA = 25°C 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Safe Operating Area http://onsemi.com 4 100 100 MMBTA05L, MMBTA06L, SMMBTA06L ORDERING INFORMATION Package Shipping† MMBTA05LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA05LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA06LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SMMBTA06LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA06LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBTA06LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MMBTA05L, MMBTA06L, SMMBTA06L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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