NTMFS4709N Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL Features •Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •These are Pb-Free Devices http://onsemi.com V(BR)DSS Applications RDS(on) Typ 2.85 mW @ 10 V 30 V •VCORE Applications •DC-DC Converters •Low Side Switching 94 A 4.0 mW @ 4.5 V N-Channel D MAXIMUM RATINGS (TJ=25°C unless otherwise stated) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V ID 18 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C Power Dissipation RqJA (Note 2) ID Max TA = 85°C Steady State G S 13 PD ID TA = 85°C 2.35 W 11 MARKING DIAGRAM & PIN ASSIGNMENT A D 8.0 TA = 25°C PD 0.91 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 94 A Power Dissipation RqJC (Note 1) TC = 25°C TC = 85°C S S S G 1 SOIC-8 FLAT LEAD CASE 488AA STYLE 1 D 4709N AYWWG G D D 68 PD 62.5 W 4709N A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package Pulsed Drain Cur‐ rent TA = 25°C, tp = 10 ms IDM 140 A Current limited by package TA = 25°C IDmaxPkg 140 A TJ, TSTG -55 to +150 °C IS 62.5 A dV/dt 10 V/ns Single Pulse Drain-to-Source Avalanche Energy TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 30 Apk, L = 1.0 mH, RG = 25 W EAS 450 mJ NTMFS4709NT3G SOIC-8 FL 5000/T ape & Reel (Pb-Free) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source July, 2007 - Rev. 3 ORDERING INFORMATION Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 (Note: Microdot may be in either location) 1 Package Shipping† NTMFS4709NT1G SOIC-8 FL 1500/T ape & Reel (Pb-Free) Publication Order Number: NTMFS4709N/D NTMFS4709N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction-to-Case (Drain) Rating RqJC 2.0 °C/W Junction-to-Ambient – Steady State (Note 3) RqJA 53.2 Junction-to-Ambient – Steady State (Note 4) RqJA 137.8 3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/T Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V 5.6 mV/°C J IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.0 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) 1.0 5.6 VGS = 11.5 V mV/°C ID = 30 A 2.8 ID = 15 A 2.8 VGS = 10 V ID = 30 A 2.85 3.6 VGS = 4.5 V ID = 30 A 4.0 5.5 ID = 15 A 4.0 gFS VDS = 15 V, ID = 15 A 41 mW S CHARGES AND CAPACITANCES Input Capacitance CISS 2370 VGS = 0 V, f = 1 MHz, VDS = 12 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 305 Total Gate Charge QG(TOT) 20 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 4.5 V, VDS = 15 V; ID = 30 A 1240 pF 2.4 4.5 nC 11 Total Gate Charge QG(TOT) 48 Threshold Gate Charge QG(TH) 4.0 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 10.6 td(ON) 16 VGS = 11.5 V, VDS = 15 V; ID = 30 A 6.5 nC SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0 W tf 173 20 105 5. Pulse Test: pulse width "300 ms, duty cycle "2% 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4709N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 8.5 VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0 W tf 87 ns 31.5 8.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 VGS = 0 V, IS = 50 A TJ = 25°C 0.85 VGS = 0 V, IS = 20 A TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.0 V 48 VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A QRR 23 ns 25 55 nC 0.65 W Package Parasitic Values Gate Resistance RG TA = 25°C 5. Pulse Test: pulse width "300 ms, duty cycle "2% 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4709N 60 VDS ≥ 10 V TJ = 25°C 3.5 V ID, DRAIN CURRENT (A) 4.5 V 50 ID, DRAIN CURRENT (A) 60 10 V VGS = 3 V 40 30 20 2.6 V 10 50 40 30 TJ = 125°C 20 TJ = 25°C 10 2.2 V 0 2 4 6 8 0 10 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.006 VGS = 11.5 V T = 150°C 0.005 T = 125°C 0.004 0.003 T = 25°C 0.002 T = -55°C 0.001 0 0 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 20 30 40 50 60 ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 0.005 TJ = 25°C VGS = 4.5 V 0.004 0.003 VGS = 11.5 V 0.002 0.001 0 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage 100000 2 ID = 30 A VGS = 10 V VGS = 0 V 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55°C 0 1 0.5 0 -50 10000 TJ = 150°C 1000 TJ = 125°C 100 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 30 NTMFS4709N VGS, GATE-TO-SOURCE VOLTAGE (V) 4000 TJ = 25°C C, CAPACITANCE (pF) CISS 3000 CISS 2000 CRSS COSS 1000 0 10 VGS = 0 V VDS = 0 V 5 0 VGS CRSS 5 10 15 20 12 QT 10 8 6 Qgs 4 2 ID = 30 A TJ = 25°C 0 0 25 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 7. Capacitance Variation 30 1000 VGS = 0 V TJ = 25°C IS, SOURCE CURRENT (A) VDD = 15 V ID = 30 A VGS = 11.5 V tr td(off) 100 tf 10 td(on) 1 20 10 0 1 10 100 0 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) Qgd 700 ID = 36 A 600 500 400 300 200 100 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 1 NTMFS4709N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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