MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN−PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS Features •Exceptional Safe Operating Area •NPN/PNP Gain Matching within 10% from 50 mA to 5 A •Excellent Gain Linearity •High BVCEO •High Frequency Benefits •Reliable Performance at Higher Powers •Symmetrical Characteristics in Complementary Configurations •Accurate Reproduction of Input Signal •Greater Dynamic Range •High Amplifier Bandwith Applications 1 •High−End Consumer Audio Products 2 3 ♦Home Amplifiers ♦Home Receivers •Professional Audio Amplifiers ♦Theater and Stadium Sound Systems ♦Public Address Systems (PAs) TO−247 CASE 340L STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc Collector Current − Continuous Collector Current − Peak (Note 1) IC 15 30 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C PD 150 Watts TJ, Tstg − 65 to +150 °C Operating and Storage Junction Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. MJWxxxxA LLYWW 1 BASE 3 EMITTER 2 COLLECTOR MJWxxxxA = Device Code xxxx = 0281 OR 0302 LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MJW0281A TO−247 30 Units/Rail MJW0302A TO−247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 2 1 Publication Order Number: MJW0281A/D MJW0281A (NPN) MJW0302A (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Value Unit RθJC 0.83 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 260 − V Collector Cutoff Current (VCB = 260 V, IE = 0) ICBO − 10 mA Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 5.0 mA 75 75 75 150 150 150 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS hFE DC Current Gain (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 3.0 A, VCE = 5.0 V) − Collector−Emitter Saturation Voltage (IC = 5.0 A, IB = 0.5 A) VCE(sat) − 1.0 V Base−Emitter On Voltage (IC = 5.0 A, VCE = 5.0 V) VBE(on) − 1.2 V fT 30 − MHz Cob − 400 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, ftest = 1.0 MHz) 100 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 160 140 120 100 80 60 40 20 0 1.0 ms 10 5.0 ms 10 ms 100 ms 1 DC 0.1 0.01 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 1 160 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Power Derating Figure 2. Safe Operating Area http://onsemi.com 2 1000 MJW0281A (NPN) MJW0302A (PNP) 500 500 hFE, DC CURRENT GAIN VCE = 5.0 V 100°C 100 −25°C 25°C 10 0.05 0.1 1 10 VBE(on), BASE−EMITTER VOLTAGE (V) −25°C 25°C 1 10 IC, COLLECTOR CURRENT (A) Figure 3. MJW0281A DC Current Gain Figure 4. MJW0302A DC Current Gain VCE = 5.0 V 1.2 1 −25°C 0.8 25°C 100°C 0.4 0.2 0 0.01 0.1 1 10 100 50 2.4 VCE = 5.0 V 1.9 1.4 0.9 −25°C 100°C 0.4 25°C −0.1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. MJW0281A Base−Emitter Voltage Figure 6. MJW0302A Base−Emitter Voltage 100 10 10 IC/IB= 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) 1.4 0.6 100°C 10 0.05 0.1 50 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5.0 V 1 100°C 25°C 0.1 0.01 0.01 −25°C 0.1 1 10 100 IC/IB= 10 1 100°C 0.1 0.01 0.01 25°C −25°C IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. MJW0281A Saturation Voltage Figure 8. MJW0302A Saturation Voltage http://onsemi.com 3 100 MJW0281A (NPN) MJW0302A (PNP) 70 VCE= 5.0 V fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 60 50 40 30 20 25°C 10 0 0.01 0.1 1 10 60 VCE= 5.0 V 50 40 30 20 25°C 10 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. MJW0281A Current Gain Bandwidth Product Figure 10. MJW0302A Current Gain Bandwidth Product http://onsemi.com 4 MJW0281A (NPN) MJW0302A (PNP) PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −T− C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 P −Y− K W J F 2 PL H G M Y Q T B M MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 −−− 4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 3: PIN 1. 2. 3. 4. D 3 PL 0.25 (0.010) M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 5 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 −−− 0.177 0.140 0.144 0.242 BSC 0.113 0.123 MJW0281A (NPN) MJW0302A (PNP) PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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