ONSEMI NJL0281D

NJL0281D (NPN)
NJL0302D (PNP)
Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
•
•
•
•
•
Thermally Matched Bias Diode
Instant Thermal Bias Tracking
Absolute Thermal Integrity
High Safe Operating Area
Pb−Free Packages are Available*
http://onsemi.com
BIPOLAR POWER
TRANSISTORS
15 AMP, 260 VOLT, 180 WATT
TO−264, 5 LEAD
CASE 340AA
STYLE 1
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming
• Superior Sound Quality Through Improved Dynamic Temperature
•
•
•
Response
Significantly Improved Bias Stability
Simplified Assembly
♦ Reduced Labor Costs
♦ Reduced Component Count
High Reliability
MARKING DIAGRAM
SCHEMATIC
NJL0xxxDG
AYYWW
Thermal Trak
Applications
• High−End Consumer Audio Products
♦
•
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
♦
NJL0xxxD = Device Code
xxx = 281 or 302
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NJL0281D
TO−264
25 Units / Rail
TO−264
(Pb−Free)
25 Units / Rail
TO−264
25 Units / Rail
TO−264
(Pb−Free)
25 Units / Rail
NJL0281DG
NJL0302D
NJL0302DG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 2
1
Publication Order Number:
NJL0281D/D
NJL0281D (NPN) NJL0302D (PNP)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCEO
260
Vdc
Collector−Base Voltage
VCBO
260
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
VCEX
260
Vdc
IC
15
25
Adc
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
180
1.43
W
W/°C
TJ, Tstg
− 65 to +150
°C
VR
200
V
IF(AV)
1.0
A
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous
− Peak (Note 1)
Operating and Storage Junction Temperature Range
DC Blocking Voltage
Average Rectified Forward Current
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
0.694
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
ESD Protection
Value
Human Body Model
Machine Model
Flammability Rating
>8000 V
> 400 V
UL 94 V−0 @ 0.125 in
http://onsemi.com
2
NJL0281D (NPN) NJL0302D (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
260
−
−
10
−
5
75
75
75
150
150
150
−
1.0
−
1.2
30
−
−
400
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 260 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 5 Adc, VCE = 5 Vdc)
VCE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
MHz
Cob
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
trr
pF
V
1.1
0.93
mA
10
100
100
ns
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
100
180
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
200
160
140
120
100
80
60
40
20
0
1.0 ms
10
5.0 ms
10 ms
100 ms
1
DC
0.1
0.01
0
20
40
60
80
100
120
140
1
160
TC, CASE TEMPERATURE (°C)
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating
Figure 2. Safe Operating Area
http://onsemi.com
3
1000
NJL0281D (NPN) NJL0302D (PNP)
500
500
hFE, DC CURRENT GAIN
VCE = 5.0 V
100°C
100
−25°C
25°C
10
0.05 0.1
1
10
VBE(on), BASE−EMITTER VOLTAGE (V)
−25°C
25°C
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. NJL0281A DC Current Gain
Figure 4. NJL0302A DC Current Gain
VCE = 5.0 V
1.2
1
−25°C
0.8
25°C
100°C
0.4
0.2
0
0.01
0.1
1
10
100
50
2.4
VCE = 5.0 V
1.9
1.4
0.9
−25°C
100°C
0.4
25°C
−0.1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. NJL0281A Base−Emitter Voltage
Figure 6. NJL0302A Base−Emitter Voltage
100
10
10
IC/IB= 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
100
IC, COLLECTOR CURRENT (A)
1.4
0.6
100°C
10
0.05 0.1
50
VBE(on), BASE−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5.0 V
1
100°C
25°C
0.1
0.01
0.01
−25°C
0.1
1
10
100
IC/IB= 10
1
100°C
0.1
0.01
0.01
25°C
−25°C
IC, COLLECTOR CURRENT (A)
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. NJL0281A Saturation Voltage
Figure 8. NJL0302A Saturation Voltage
http://onsemi.com
4
100
NJL0281D (NPN) NJL0302D (PNP)
70
VCE= 5.0 V
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
60
50
40
30
20
25°C
10
0
0.01
0.1
1
VCE= 5.0 V
50
40
30
20
25°C
10
0
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 9. NJL0281A Current Gain Bandwidth
Product
Figure 10. NJL0302A Current Gain Bandwidth
Product
10
10
TJ = 100°C
1
IF, FORWARD CURRENT (A)
IR, REVERSE CURRENT (mA)
60
0.1
TJ = 25°C
0.01
TJ = −25°C
0.001
0.0001
0
20
40
60
80
1
0.1
100°C
0.001
0.3
100 120 140 160 180 200
25°C
−25°C
0.01
VR, REVERSE VOLTAGE (VOLTS)
0.4
0.5
0.6
0.7
0.8
0.9
VF, VOLTAGE (VOLTS)
Figure 11. Typical Reverse Current
Figure 12. Typical Forward Voltage
http://onsemi.com
5
1
1.1
NJL0281D (NPN) NJL0302D (PNP)
PACKAGE DIMENSIONS
TO−264, 5 LEAD
CASE 340AA−01
ISSUE O
−T−
Q
−B−
Y
0.25 (0.010)
M
T B
C
M
E
U
N
A
R
W
L
1
2
3 4
5
P
K
M
G
D 5 PL
0.25 (0.010)
F 5 PL
J
H
M
T B
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN
NOM MAX MIN
NOM MAX
A 25.857 25.984 26.111 1.018 1.023 1.028
B 19.761 19.888 20.015 0.778 0.783 0.788
C
4.928 5.055 5.182 0.194 0.199 0.204
0.0480 BSC
D
1.219 BSC
E
2.032 2.108 2.184 0.0800 0.0830 0.0860
1.981 BSC
0.0780 BSC
F
0.150 BSC
G
3.81 BSC
H
2.667 2.718 2.769 0.1050 0.1070 0.1090
0.0230 BSC
J
0.584 BSC
K 20.422 20.549 20.676 0.804 0.809 0.814
0.444 REF
L
11.28 REF
−−−
7_
0_
7_
0 _ −−−
M
0.180 REF
N
4.57 REF
P
2.259 2.386 2.513 0.0889 0.0939 0.0989
0.1370 BSC
Q
3.480 BSC
0.100 REF
R
2.54 REF
−−−
S
0 _ −−−
8_
0_
8_
0.243 REF
U
6.17 REF
−−−
W
0 _ −−−
6_
0_
6_
0.0940 BSC
Y
2.388 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
4. ANODE
5. CATHODE
S
W
S
ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NJL0281D/D