Preliminary SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5 external components to achieve 28.5 dB gain at 1.575 GHz and a noise figure of 1.5dB. This RFIC is fabricated using Silicon Germanium technology. 100 - 4000 MHz Low Noise Amplifier Silicon Germanium The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Product Features • Lead Free, RoHS Compliant & Green Package • High Gain and Low Noise, Typical Performance 40 4 3.5 Gain 30 3 25 2.5 20 2 15 1.5 10 1 NF 5 0 100 NF (dB) Gain (dB) 35 0.5 0 600 1100 1600 2100 2600 3100 Frequency (MHz) Symbol Parameters 28.5dB and 1.5dB respectively @ 1575MHz Low Power Consumption, 9mA @ 3.3V • • • • • Fully Matched LNA, only 4-5 external components Operates from 2.7 to 3.6V Small Package: 2x2 QFN High input overdrive capability, +18dBm Applications • High Gain GPS Receivers • ISM & WiMAX LNAs Units Frequency Min. 28.5 23 17 Typ. S21 Small Signal Gain dB 1.575 GHz 2.44 GHz 3.5 GHz NF Noise Figure dB 1.575 GHz 2.44 GHz 3.5 GHz 1.50 2 2.8 P1dB Output Power at 1dB Compression dBm 1.575 GHz 2.44 GHz 3.5 GHz 5.3 1.5 -1.4 IIP3 Input Third Order Intercept Point dBm 1.575 GHz 2.44 GHz 3.5 GHz -13 -12 -8.5 Input Return Loss dB 1.575 GHz 2.44 GHz 3.5 GHz 14.3 IRL 9.5 ORL Output Return Loss dB 1.575 GHz 2.44 GHz 3.5 GHz S12 ID Reverse Isolation dB 0.05 - 4 GHz Operating Current mA Test Conditions: VCC = 3.3V ID = 10.5mA Typ. TL = 25°C ZS = ZL = 50 Ohms Max. 12.0 10.0 14.0 22.0 7.5 -28 10.5 12.5 IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104519 Rev C Preliminary SGL-0622Z 100-4000 MHz SiGe Low Noise Amplifier Typical RF Performance at Key Operating Frequencies (With Application Circuit) Symbol S21 IIP3 P1dB S11 S22 S12 NF Parameter Small Signal Gain Input Third Order Intercept Point Output at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure Test Conditions: VCC = 3.3V Unit dB dBm dBm dB dB dB dB 100 34.6 200 34.9 15.1 9.2 38.8 1.25 20.0 12.2 39.8 0.96 ID = 10.5 mA Typ. TL = 25°C Frequency (MHz) 450 850 34.4 32.8 12.6 11.8 38.7 0.84 16.0 10.4 39.9 1.16 1575 28.5 -13.0 5.3 1950 26.1 2440 23.0 -12.0 1.5 3500 17.0 -8.5 -1.4 14.3 9.5 35.6 1.50 12.8 12.1 34.8 1.78 12.0 14.0 32.0 2.01 10.0 22.0 29.0 2.81 IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm ZS = ZL = 50 Ohms Absolute Maximum Ratings Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Parameter Absolute Limit Max Device Current (ID) 20mA Max Device Voltage (VD) 4V Max. RF Input Power* (See Note) +18 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Rating Class 1C MSL 1 This product qualification report can be downloaded at www.sirenza.com Noise Figure vs. Frequency 4 3.5 25C *Note: Load condition 1, ZL = 50 Ohms Load condition 2, ZL = 10:1 VSWR 85C 3 dB 2.5 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l 2 1.5 1 0.5 Caution: ESD sensitive 0 1.5 2 2.5 3 Appropriate precautions in handling, packaging and testing devices must be observed. 3.5 Frequency (GHz) IIP3 vs. Frequency -6 P1dB vs. Frequency 10 8 -10 6 P1dB (dBm) IIP3 (dBm) 25C -8 -12 -14 -16 25C -40C 85C -18 -40C 85C 4 2 0 -2 -20 -4 1.5 2 2.5 3 3.5 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 1.5 2 2.5 3 3.5 Frequency (GHz) Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104519 Rev C Preliminary SGL-0622Z 100-4000 MHz SiGe Low Noise Amplifier Application Circuit Data, VCC= 3.3V, ID= 9mA IM3 vs. Frequency DCIV over Temperature 20 -35 18 -40 -50 25C 16 -40C 14 85C 12 Id (mA) IM3 (dBc) -45 -55 25C -40C 85C 10 8 -60 6 -65 4 2 -70 1.5 2 2.5 3 0 3.5 0 Frequency (GHz) 1 Vd (V) 2 3 4 S21 vs. Frequency S11 vs. Frequency 0 40 35 -5 30 25 dB dB -10 -15 -20 S11_25C 3 S21_-40C S21_85C 0 -30 1 2 Frequency (GHz) 15 5 S11_85C 0 S21_25C 10 S11_-40C -25 20 0 4 0.5 1 1.5 2 2.5 3 3.5 4 3 3.5 4 Frequency (GHz) S22 vs. Frequency S12 vs. Frequency 0 0 S12_25C -10 S22_25C -5 S22_-40C S12_-40C S22_85C -10 S12_85C dB dB -20 -30 -15 -20 -40 -25 -50 -30 0 0.5 303 S. Technology Ct. Broomfield, CO 80021 1 1.5 2 Frequency (GHz) 2.5 3 3.5 4 Phone: (800) SMI-MMIC 3 0 0.5 1 1.5 2 2.5 Frequency (GHz) http://www.sirenza.com EDS-104519 Rev C Preliminary SGL-0622Z 100-4000 MHz SiGe Low Noise Amplifier Application Schematic Vs 1uF 1200 pF 100pF 2 4 RF in 68nH 1 RF out SGL-0622Z 100pF 100pF Epad Evaluation Board Layout Bill of Materials + C1 C2 C3 C4 C5 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 1x TAJB105KLRH Rohm 1.0uF 1x MCH185C122KK Rohm 1200pF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF L1 1x LL1608-FS56NJ Toko 68nH Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB QFN2x2 http://www.sirenza.com EDS-104519 Rev C Preliminary SGL-0622Z 100-4000 MHz SiGe Low Noise Amplifier Pin # Function Description 1 RF OUT/VD 2 GND Connect to ground per application circuit drawing. 3,5,6,7,8 N/A Not Used 4 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the application schematics. EPAD GND Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Vias should be located under the EPAD as shown in the recommended land pattern. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. (See application circuit) Suggested Pad Layout Part Number Ordering Information Part Number Reel Size Devices / Reel SGL-0622Z 7" 3000 Part Identification Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104519 Rev C