FDB088N08 tm ® N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features Description • RDS(on) = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed cially tailored to minimize the on-state resistance and yet • Low Gate Charge maintain superior switching performance. • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Convertors / Synchronous Rectification • RoHS Compliant D D G D2-PAK G S FDB Series S Absolute Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted* Parameter Drain Current ID IDM Drain Current 25oC, - Continuous (TC = Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed FDB088N08 75 Units V ±20 V 85* A 60 A 75 A (Note 1) 340 A EAS Single Pulsed Avalanche Energy (Note 2) 309 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.3 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (TC = 25oC) - Derate above 25oC 160 W 1.06 W/oC -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.94 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDB088N08 Rev. A 1 Units o C/W www.fairchildsemi.com FDB088N08 N-Channel PowerTrench® MOSFET March 2009 Device Marking FDB088N08 Device FDB088N08 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 75 - - V - 0.07 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TC = 25oC ID = 250μA, Referenced to 25oC VDS = 75V, VGS = 0V - - 1 VDS = 75V, TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 7.3 8.8 mΩ - 300 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 37.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 60V, ID = 75A VGS = 10V (Note 4, 5) - 4960 6595 pF - 355 470 pF - 200 300 pF - 91 118 nC - 22 - nC - 28 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 37.5V, ID = 75A RGEN = 25Ω, VGS = 10V (Note 4, 5) - 45 100 ns - 158 326 ns - 244 498 ns - 102 214 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 85 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 340 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time 41.1 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/μs - 80.7 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.11mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB088N08 Rev. A 2 www.fairchildsemi.com FDB088N08 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 100 Figure 2. Transfer Characteristics 500 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V ID,Drain Current[A] ID,Drain Current[A] 500 10 100 o 175 C o 25 C o -55 C 10 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 2 0.2 0.1 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 500 0.015 VGS = 10V 0.010 VGS = 20V 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 0.005 0 100 200 ID, Drain Current [A] 3 0.0 300 Figure 5. Capacitance Characteristics 1.6 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Ciss 6000 4000 Coss 2000 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 8000 Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.020 RDS(ON) [Ω], Drain-Source On-Resistance 2 Crss *Notes: 1. VGS = 0V 2. f = 1MHz VDS = 15V VDS = 37.5V VDS = 60V 8 6 4 2 *Note: ID = 75A 0 0.1 FDB088N08 Rev. A 1 10 VDS, Drain-Source Voltage [V] 0 30 3 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FDB088N08 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 1000 80 100 ID, Drain Current [A] ID, Drain Current [A] 10μs 100μs 10 Operation in This Area is Limited by R DS(on) 1ms 10ms *Notes: o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 1 0.1 1 DC Limited by package 60 40 20 10 100 VDS, Drain-Source Voltage [V] 0 25 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 t1 *Notes: t2 o 1. ZθJC(t) = 0.94 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 0.01 Single pulse 0.05 -5 10 FDB088N08 Rev. A PDM 0.05 10 -4 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDB088N08 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB088N08 N-Channel PowerTrench® MOSFET Mechanical Dimensions FDB088N08 Rev. A 5 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * ® The Power Franchise TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com