FDH055N15A N-Channel PowerTrench® MOSFET 150V, 167A, 5.9mΩ Features Description • RDS(on) = 4.8mΩ ( Typ.)@ VGS = 10V, ID = 120A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • DC to DC Converters • High Power and Current Handling Capability • Synchronous Rectification for Server/Telecom PSU • RoHS Compliant • Battery Charger • AC motor drives and Uninterruptible Power Supplies • Off-line UPS D G G DS TO-220 G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V 167* - Continuous (TC = 100oC, Silicon Limited) 118 - Continuous (TC = 25oC, Package Limited) 156 - Pulsed (Note 1) 668 A (Note 2,6) 835 mJ 6.0 V/ns (Note 3) A (TC = 25oC) 429 W - Derate above 25oC 2.86 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 150 o -55 to +175 C 300 oC Ratings Units *Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.35 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient ©2011 Fairchild Semiconductor Corporation FDH055N15A Rev. A4 o C/W 40 1 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET April 2011 Device Marking FDH055N15A Device FDH055N15A Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 150 - - V - 0.1 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1 VDS = 120V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 4.8 5.9 mΩ - 219 - S ID = 250µA, Referenced to 25oC µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 120A gFS Forward Transconductance VDS = 10V, ID = 120A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance - 7100 9445 pF - 664 885 pF - 23 - pF VDS = 75V, VGS = 0V - 1159 - pF nC VDS = 75V, ID = 120A VGS = 10V VDS = 75V, VGS = 0V f = 1MHz Qg(tot) Total Gate Charge at 10V - 92 120 Qgs Gate to Source Gate Charge - 31 - nC Qgs2 Gate Charge Threshold to Plateau - 15 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) (Note 4,5) - 16 - nC Drain Open - 1.2 - Ω - 35 80 ns VDD = 75V, ID = 120A VGS = 10V, RGEN = 4.7Ω - 67 144 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4,5) - 71 152 ns - 21 52 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 167* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 668 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 120A - - 1.25 V trr Reverse Recovery Time 105 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 120A, VDS = 75V dIF/dt = 100A/µs (Note 4) - 342 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Starting TJ = 25°C, L = 3 mH, IAS = 23.6 A. 3. ISD ≤ 120A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C. 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%. 5. Essentially Independent of Operating Temperature Typical Characteristics. 6. Single Pulsed Avalanche Energy per Die. FDH055N15A Rev. A4 2 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 500 o 25 C o 175 C 10 o -55 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 10 0.1 1 VDS, Drain-Source Voltage[V] 1 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 6.0 5.5 VGS = 10V 5.0 VGS = 20V 4.5 100 o 175 C 10 o 25 C *Notes: 1. VGS = 0V o *Note: TC = 25 C 4.0 0 50 2. 250µs Pulse Test 1 0.2 100 150 200 250 300 350 400 450 ID, Drain Current [A] Figure 5. Capacitance Characteristics 1.4 10 VGS, Gate-Source Voltage [V] Ciss 1000 Coss 100 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 6.5 RDS(ON) [mΩ], Drain-Source On-Resistance 2 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 FDH055N15A Rev. A4 VDS = 30V VDS = 75V VDS = 120V 8 6 4 2 Crss 1 10 VDS, Drain-Source Voltage [V] *Note: ID = 120A 0 100 200 3 0 25 50 75 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 8. On-Resistance Variation vs. Temperature 1.15 2.8 1.10 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250µA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.4 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 120A 0.8 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 180 1000 100µs 100 ID, Drain Current [A] ID, Drain Current [A] 10µs 1ms 10 Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: o 1. TC = 25 C 0.1 135 VGS= 10V 90 45 Limited by package o 2. TJ = 175 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] o RθJC = 0.35 C/W 0 25 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Eoss vs. Drain to Source Voltage 8 EOSS, [µJ] 6 4 2 0 0 FDH055N15A Rev. A4 30 60 90 120 VDS, Drain to Source Voltage [V] 150 4 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDH055N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 t1 0.05 0.01 t2 0.02 0.01 *Notes: o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 FDH055N15A Rev. A4 PDM 0.1 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDH055N15A Rev. A4 6 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDH055N15A Rev. A4 7 www.fairchildsemi.com FDH055N15A N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-247-3L Dimensions in Millimeters FDH055N15A Rev. A4 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Power-SPM™ AccuPower™ The Power Franchise® The Right Technology for Your Success™ F-PFS™ PowerTrench® Auto-SPM™ ® PowerXS™ FRFET® AX-CAP™* Programmable Active Droop™ Global Power ResourceSM BitSiC® ® Build it Now™ Green FPS™ QFET TinyBoost™ QS™ CorePLUS™ Green FPS™ e-Series™ TinyBuck™ Quiet Series™ CorePOWER™ Gmax™ TinyCalc™ RapidConfigure™ CROSSVOLT™ GTO™ TinyLogic® ™ CTL™ IntelliMAX™ TINYOPTO™ Current Transfer Logic™ ISOPLANAR™ TinyPower™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® MegaBuck™ TinyPWM™ Dual Cool™ SignalWise™ MICROCOUPLER™ TinyWire™ EcoSPARK® SmartMax™ MicroFET™ TranSiC® EfficentMax™ SMART START™ MicroPak™ TriFault Detect™ ® ESBC™ SPM MicroPak2™ TRUECURRENT®* STEALTH™ MillerDrive™ ® μSerDes™ ® SuperFET MotionMax™ SuperSOT™-3 Motion-SPM™ Fairchild® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® UHC® SuperSOT™-8 OptiHiT™ FACT Quiet Series™ ® Ultra FRFET™ SupreMOS® OPTOLOGIC FACT® UniFET™ OPTOPLANAR® SyncFET™ FAST® ® VCX™ Sync-Lock™ FastvCore™ VisualMax™ ®* FETBench™ XS™ FlashWriter® * PDP SPM™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54