Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC ICM IB IBM PD TJ,Tstg ΘJA BCX54 BCX55 BCX56 UNITS 45 45 60 60 5.0 1.0 1.5 100 200 1.2 100 80 V V V A A mA mA W -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TA=125°C IEBO VEB=5.0V BVCBO IC=100µA (BCX54) 45 BVCBO IC=100µA (BCX55) 60 BVCBO IC=100µA (BCX56) 100 BVCEO IC=10mA (BCX54) 45 BVCEO IC=10mA (BCX55) 60 BVCEO IC=10mA (BCX56) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IB=500mA hFE VCE=2.0V, IC=5.0mA 63 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 40 fT VCE=5.0V, IC=10mA, f=100MHz 130 °C °C/W MAX 100 10 100 0.5 1.0 UNITS nA µA nA V V V V V V V V 250 160 250 MHz R1 ( 18-December 2001) Central TM BCX54 BCX55 BCX56 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE A E B G F H 1 C 3 2 J K R3 L M BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 BM BCX56 BH BCX56-10 BK BCX56-16 BL R1 ( 18-December 2001)