Central BCV47 TM Semiconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. Marking Code is FG. SOT-23 CASE MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V IC 500 ICM 800 mA mA Base Current IB 100 mA Power Dissipation PD 350 mW TJ,Tstg -65 to +150 °C ΘJA 357 °C/W Collector Current Peak Collector Current Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO IEBO VCB=30V 100 nA VBE=10V 100 nA BVCEO IC=10mA IC=10µA 60 V 80 V IE=100nA IC=100mA, IB = 0.1mA IC=100mA, IB = 0.1mA 10 V VCE=5.0V, IC = 1.0mA VCE=5.0V, IC = 10mA 2,000 BVCBO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT VCE=5.0V, IC = 100mA VCE=5.0V, IC = 30mA, f=100MHz TYP 1.0 V 1.5 V 4,000 10,000 220 MHz R0 ( 07-December 2001) Central TM Semiconductor Corp. BCV47 NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: FG R0 ( 07-December 2001)