Central TM Semiconductor Corp. CMPT930 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT930 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier applications. Marking Code is C1X. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD UNITS V V V mA mW 45 45 5.0 30 350 TJ,Tstg ΘJA oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICEO ICES IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob NF TEST CONDITIONS VCB=45V VCE=5.0V VCE=45V VEB=5.0V IC=10µA IC=10mA IE=10µA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCE=5.0V, IC=10µA VCE=5.0V, IC=500µA VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA, f=30MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=10mA, RS=10kΩ, f=10Hz to 15.7kHz 156 MIN MAX 10 10 10 10 45 45 5.0 0.6 100 150 1.0 1.0 300 UNITS nA nA nA nA V V V V V 600 30 8.0 MHz pF 3.0 dB All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 157