HL6339G/42G 633nm Lasing Laser Diode ADE-208-1434A (Z) Rev.1 Apr. 2002 Description The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Application • Measurement • Laser analysis systems • Laser scanner Features • Optical output power : 5 mW (CW) • Visible light output : 633 nm Typ (nearly equal to He-Ne gas laser) • Low operating current : 55 mA Typ • Low operating voltage : 2.3 V Typ • TM mode oscillation Internal Circuit • HL6339G Package Type • HL6339G/42G: G2 1 Internal Circuit • HL6342G 3 PD 1 LD 2 3 PD LD 2 HL6339G/42G Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 5 mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +40 °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Optical output power PO 5 — — mW Kink free Threshold current Ith — 45 60 mA Operating current IOP — 55 70 mA PO = 5 mW Operating voltage VOP — 2.3 2.7 V PO = 5 mW Slope efficiency ηs 0.40 0.65 0.90 mW/mA 3 (mW) / (I(4mW) – I(1mW)) Lasing wavelength λp 630 633 635 nm PO = 5 mW Beam divergence parallel to the junction θ// 6 8 11 deg. PO = 5 mW Beam divergence parpendicular to the junction θ⊥ 25 30 35 deg. PO = 5 mW Monitor current IS 0.04 0.08 0.14 mA PO = 5 mW, VR(PD) = 5 V Rev.1, Apr. 2002, page 2 of 8 HL6339G/42G Typical Characteristic Curves 4 TC = –10˚C Monitor current, IS (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 5 25˚C 3 40˚C 2 1 0 0 10 20 30 40 50 60 70 Forward current, IF (mA) Optical Output Power vs. Monitor Current 0.12 VR(PD) = 5V T = 25˚C 0.10 C 0.08 0.06 0.04 0.02 0 80 Threshold current, Ith (mA) Slope efficiency, ηs (mW/mA) 0.6 0.4 0.2 0 –10 0 10 20 30 Case temperature, TC (˚C) 40 1 2 3 4 Optical output power, PO (mW) 5 Threshold Current vs. Case Temperature 100 Slope Efficiency vs. Case Temperature 1.0 0.8 0 50 20 10 –10 0 20 10 30 Case temperature, TC (˚C) 40 Rev.1, Apr. 2002, page 3 of 8 HL6339G/42G Typical Characteristic Curves (cont) Monitor Current vs. Case Temperature Lasing Wavelength vs. Case Temperature 640 PO = 5mW 0.20 Lasing wavelength, λp (nm) Monitor current, IS (mA) PO = 15mW VR = 5V 0.15 0.10 0.05 0 –10 0 10 20 30 Case temperature, TC (˚C) 636 632 628 624 –10 40 Lasing Spectrum 40 Polarization Ratio vs. Optical Output Power 250 TC = 25˚C NA = 0.55 TC = 25˚C 200 PO = 3mW Polarization ratio PO = 5mW Relative intensity 0 10 20 30 Case temperature, TC (˚C) 150 100 50 PO = 1mW 631 632 633 634 Wavelength, λp (nm) Rev.1, Apr. 2002, page 4 of 8 635 0 0 1 2 3 4 Optical output power, PO (mW) 5 HL6339G/42G Typical Characteristic Curves (cont) Astigmatism vs. Optical Output Power 10 TC = 25˚C NA = 0.55 Ralative intensity 1.0 PO = 5mW 0.8 TC = 25˚C Perpendicular 0.6 Parallel 0.4 0.2 0 –40 –30 –20 –10 0 10 20 Angle, θ (deg.) 30 Astigmatism, AS (mm) Far Field Pattern 8 6 4 2 40 0 0 100 80 80 60 Forward (C : 100pF, R : 1.5kΩ) N = 10pcs ∆IO ≤ 10% judgment 40 20 0 0 200 400 Applied voltege (V) 5 Electrostatic Destrucution 100 Survival rate (%) Survival rate (%) Electrostatic Destrucution 4 1 2 3 Optical output power, PO (mW) 60 Reverse (C : 100pF, R : 1.5kΩ) N = 10pcs ∆IO ≤ 10% judgment 40 20 600 0 0 0.5 1.5 2.5 1 2 Applied voltege (kV) 3 Rev.1, Apr. 2002, page 5 of 8 HL6339G/42G Package Dimensions As of January, 2002 0.4 +0.1 –0 Unit: mm φ 9.0 +0 –0.025 1.0 ± 0.1 Glass φ 7.2 +0.3 –0.2 φ 6.2 ± 0.2 (φ2.0) 3.5 ± 0.2 9±1 2.45 Emitting Point 3 – φ 0.45 ± 0.1 1 2 1.5 ± 0.1 0.3 (90˚) (0.65) 3 3 1 2 φ 2.54 ± 0.35 Hitachi Code JEDEC JEITA Mass (reference value) Rev.1, Apr. 2002, page 6 of 8 LD/G2 — — 1.1 g HL6339G/42G Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. Rev.1, Apr. 2002, page 7 of 8 HL6339G/42G Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Apr. 2002, page 8 of 8