Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS(on) 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C, Chip capability IDM TC = 25°C, pulse width limited by TJM TC = 25°C 27N80 27 25N80 25 27N80 108 25N80 100 27N80 14 25N80 13 27 25 108 100 14 13 A A A A A A 30 30 mJ 5 5 V/ns IAR EAR TC= 25°C dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 500 520 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 300 - °C - 2500 3000 V~ V~ 0.9/6 - Weight 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 30 g D Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA VDSS temperature coefficient 800 VGH(th) VDS = VGS, ID = 8 mA VGS(th) temperature coefficient 2 V %/K 0.096 4.5 V %/K ±200 nA -0.214 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C 500 2 µA mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 25N80 27N80 0.35 0.30 Ω Ω © 2002 IXYS All rights reserved S miniBLOC, SOT-227 B (IXFN) E153432 S G D G S S D S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • • • • • • Symbol (TAB) G • • International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications • • • • • DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages • • • Easy to mount Space savings High power density 95561D(6/02) IXFK 25N80 IXFN 25N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 28 VGS = 0 V, VDS = 25 V, f = 1 MHz Crss tr VGS td(off) RG = 1 Ω (External), 712 790 pF 146 192 240 pF = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs 30 ns 80 ns 75 ns 40 tf Qg(on) 320 VGS 120 RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode ns 350 400 = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 38 Qgd pF 630 td(on) 46 nC 56 nC 130 142 nC 0.25 K/W 0.15 K/W 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 27N80 25N80 27 25 A A ISM Repetitive; pulse width limited by TJM 27N80 25N80 108 100 A A VSD IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V T J =25°C TJ =125°C T J =25°C 250 400 ns ns µC A QRM IRM TO-264 AA Outline S 7930 8400 9740 Ciss Coss 16 IXFK 27N80 IXFN 27N80 2 17 Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 25N80 IXFN 25N80 40 40 TJ = 25 C TJ = 125OC VGS = 9V 8V 7V 6V 30 VGS = 9V 8V 7V 6V 30 5V 20 ID - Amperes O ID - Amperes IXFK 27N80 IXFN 27N80 5V 20 10 10 4V 4V 0 0 0 2 4 6 8 10 0 4 8 2.6 2.6 2.2 2.4 TJ = 125OC RDS(ON) - Normalized VGS = 10V 2.4 RDS(ON) - Normalized 20 Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 VGS = 10V 2.2 2.0 ID = 27A 1.8 1.6 ID = 13.5A 1.4 1.2 1.0 0 10 20 30 40 1.0 25 50 50 ID - Amperes 100 125 150 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 30 30 25 25 IXFN27N80 IXF_25N80 ID - Amperes 20 IXFK27N80 15 10 5 0 -50 75 TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID ID - Amperes 16 VDS - Volts VDS - Volts 0.8 12 20 15 TJ = 125oC 10 TJ = 25oC 5 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2002 IXYS All rights reserved 0 2 3 4 5 VGS - Volts Figure 6. Admittance Curves 6 7 IXFK 25N80 IXFN 25N80 12 10000 Ciss 8 Capacitance - pF V = 400V Vds=300V DS ID=30A = 27A = 1mA IG=10mA 10 VGS - Volts IXFK 27N80 IXFN 27N80 6 4 f = 1MHz Coss 1000 Crss 2 0 0 100 200 300 400 100 500 0 5 Gate Charge - nC 10 15 20 25 30 35 40 VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 100 ID - Amperes 80 60 TJ = 125OC 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 1 R(th)JC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 D = Duty Cycle 0.01 D=0.02 D=0.01 Single pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1