HiPerFETTM Power MOSFETs Single Die MOSFET IXFN25N90 IXFN26N90 VDSS ID25 RDS(on) 900V 25A 900V 26A 330mΩ Ω 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 IDM ID25 IDM TC TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C = 25°C, pulse width limited by TJM 25N90 25N90 26N90 26N90 25 100 26 104 A A A A IAR IAR EAR EAS TC TC TC TC = 25°C = 25°C = 25°C = 25°C 25N90 26N90 25 26 64 3 A A mJ J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 600 W Features -55 ... +150 °C z TJ S G S D G = Gate S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. z TJM 150 °C Tstg -55 ... +150 °C z 300 °C z 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque z t = 1min t = 1s Weight D = Drain z International standard package miniBLOC, with Aluminium nitride isolation Low RDS(ON) HDMOSTM process Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z Low gate drive requirement High power density Applications: Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = 0.8 • VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V z z z z V ± 200 nA z 100 μA 2 mA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 5.0 Switched-mode and resonant-mode power supplies DC-DC Converters Battery chargers DC choppers Temperature & lighting controls 25N90 26N90 330 mΩ 300 mΩ DS97526F(12/08) IXFN25N90 IXFN26N90 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 10V, ID = 0.5 • IDSS, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS td(off) RG = 1Ω (External) S 8.7 10.8 nF 800 1000 pF 300 375 pF 60 tf Qg(on) Qgs 28 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd SOT-227B Outline ns 35 ns 130 ns 24 ns 240 nC 56 nC 107 nC 0.21 °C/W RthJC RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 25N90 26N90 25 26 A A ISM Repetitive, pulse width limited by TJM 25N90 26N90 100 104 A A VSD IF = IS, VGS = 0V, Note 1 1.5 V 250 ns trr QRM IRM IF = IS, -di/dt = 100A/μs VR = 100V 1.4 μC 10 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN25N90 IXFN26N90 Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 50 20 T J = 25°C V GS = 9V 8V 6V ID - Amperes ID - Amperes 40 7V 15 V GS = 9V 8V 7V T J = 25°C 5V 10 6V 30 20 5V 5 10 4V 4V 0 0 0 2 4 6 8 0 10 4 8 30 25 V GS = 9V 8V 7V 25 6V 5V 20 ID - Amperes T J = 125°C ID - Amperes 20 Figure 4. Admittance Curves Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 15 10 5 20 O T J = 125 C 15 O T J = 25 C 10 5 4V 0 0 0 5 10 15 20 2 25 3 4 V DS - Volts 2.4 5 6 7 V GS - Volts 6. R 0.5value ID25 Value 6. Fig. RDS(ON) Normalized to 0.5toID25 vs. Tvs. DS(on) Normalized J Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID Junction Temperature 2.4 2.4 V GS = 10V 2.2 2.2 2.0 RRDS(ON) - Normalized DS(on) - Normalized 2.2 RDS(ON) - Normalized 16 V CE - Volts V DS - Volts 30 12 T J = 125°C 1.8 1.6 1.4 T J = 25°C 1.2 V = 10V VGSGS = 10V 2.0 2.0 I D = 26A ID = 26A 1.8 1.8 I D = 13A 1.6 1.6 1.4 1.4 I D = 13A 1.2 1.2 1.0 1.0 1.0 0.8 0.8 0.8 0 10 20 30 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 40 50 25 25 50 50 75 100 125 75 100 125 Centigrade T J -TDegrees - Degrees C J 150 150 IXFN25N90 IXFN26N90 Figure 8. Capacitance Curves Figure 7. Gate Charge 20000 15 V DS = 500 V I D = 13 A I G = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 Crss 100 0 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 35 40 100 125 150 V DS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 50 30 IXFN26N90 45 25 IXFN25N90 35 30 ID - Amperes ID - Amperes 40 T J = 125 o C 25 20 T J = 25 o C 15 10 20 15 10 5 5 0 0.0 0.3 0.6 0.9 1.2 1.5 0 -50 -25 0 25 50 75 o V SD - Volts Case Temperatue - C 0.300 R(th)JC - K/W 0.100 0.010 0.001 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Pulse W idth - Seconds Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N90(9X)12-09-08