MCC ER3AB omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU ER3JB Features • • • • • 3 Amp Super Fast Recovery Silicon Rectifier 50 to 600 Volts For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250°C for 10 Seconds At Terminals\ Super Fast Recovery Times For High Effieciency Maximum Ratings • • • Operating Temperature: -50°C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 16 °C/W Junction To Lead MCC Catalog Number ER3AB ER3BB ER3CB ER3DB ER3GB ER3JB Device Marking ER3AB ER3BB ER3CB ER3DB ER3GB ER3JB Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V DO-214AA (SMBJ) (LEAD FRAME) A Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V B C F H D G E DIMENSIONS Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ER3AB-3DB ER3GB ER3JB Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) 3.0A TL = 75°C IFSM 100A 8.3ms, half sine VF .95V 1.25V 1.70V IFM = 3.0A; TJ = 25°C IR 5µA 200µA TJ = 25°C TJ = 100°C Trr 35ns CJ 45pF DIM A B C D E F G H INCHES MIN .160 .130 .006 .030 .200 .079 .075 .002 MM MIN 4.06 3.30 0.15 0.76 5.08 2.01 1.91 0.05 MAX .185 .155 .012 .060 .220 .103 .087 .008 MAX 4.70 3.94 0.31 1..52 5.59 2.62 2.21 0.203 SUGGESTED SOLDER PAD LAYOUT 0.106 0.083” IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 2% www . mccsemi.com 0.050” NOTE MCC ER3AB thru ER3JB Figure 1 Typical Forward Characteristics 100 Figure 2 Forward Derating Curve 60 3.0 40 ER3AB-3DB 20 2.5 ER3EB-3GB 10 2.0 6 ER3JB 4 1.5 Amps 2 1.0 25°C Amps 1 .5 Single Phase, Half Wave 60Hz Resistive or Inductive Load .6 .4 0 40 60 80 100 120 140 160 .2 °C .1 Average Forward Rectified Current - Amperesversus Lead Temperature - °C .06 .04 .02 .01 .4 .6 .8 1.0 1.2 1.6 1.4 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 100 60 40 20 pF TJ=25°C 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com 400 1000 MCC ER3AB thru ER3JB Figure 4 Typical Reverse Characteristics 1000 600 Figure 5 Peak Forward Surge Current 150 400 200 125 TJ=100°C 100 100 60 75 40 Amps 50 20 25 µAmps 10 0 6 4 1 2 6 4 8 10 20 40 Cycles TJ=75°C Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 2 1 .6 .4 TJ=25°C .2 .1 60 80 100 20 40 60 80 100 120 140 Volts Instantaneous Reverse Leakage Current - MicroAmperesversus Percent Of Rated Peak Reverse Voltage - Volts Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 Pulse Generator Note 2 25Vdc 1Ω Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm www.mccsemi.com