MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Ic(max) = 500mA) Á With clamping diodes Á Driving available with PMOS IC output of 8-18V Á Wide operating temperature range (Ta = –20 to +75°C) IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 OUTPUT IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 9 →COM COMMON 8 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 10.5K INPUT 5K 3K GND The seven circuits share the COM and GND. FUNCTION The M54526P and M54526FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum. The M54526FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol Collector-emitter voltage Collector current VI IF Input voltage VR Pd (Unless otherwise noted, Ta = –20 ~ +75 °C) Parameter VCEO IC The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Conditions Output, H Current per circuit output, L Clamping diode forward current Clamping diode reverse voltage Topr Power dissipation Operating temperature Tstg Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +50 Unit V 500 mA –0.5 ~ +30 500 V mA 50 1.47(P)/1.00(FP) V W –20 ~ +75 –55 ~ +125 °C °C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –20 ~ +75°C) Limits Parameter Output voltage VO Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage IC VIH VIL Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more than 30% FP : no more than 25% “L” input voltage ELECTRICAL CHARACTERISTICS min 0 typ — max 50 0 — 400 0 — 200 8 — 0 — 25 0.5 Unit V mA V V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) VI = 8V, I C = 400mA Collector-emitter saturation voltage VI = 8V, I C = 200mA II Input current VF IR h FE Limits Test conditions min 50 typ+ — max — — — 1.3 0.95 2.4 1.6 VI = 10V — 0.9 1.5 Clamping diode forward voltage VI = 25V IF = 400mA — — 2.8 1.5 4.1 2.4 Clamping diode reverse current DC amplification factor VR = 50V VCE = 4V, IC = 350mA, Ta = 25°C — 2500 100 — ICEO = 100µA — 1000 Unit V V mA V µA — + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) NOTE 1 TEST CIRCUIT Limits typ max — 12 — ns — 230 — ns min Unit TIMING DIAGRAM INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 8VP-P (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 Collector current Ic (mA) VI = 8V M54526P 1.5 M54526FP 1.0 0.5 0 0 25 50 75 Collector current Ic (mA) ➀ 0 0.5 1.0 1.5 2.0 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 80 ➂ ➃ ➄ ➅ ➆ 500 400 ➀ 300 ➁ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54526FP) Duty-Cycle-Collector Characteristics (M54526FP) ➂ ➃ ➄ ➅ ➆ 100 500 ➀ 400 300 ➁ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 Duty cycle (%) 80 ➂ ➃ ➄ ➅ ➆ 100 Collector current Ic (mA) 500 Collector current Ic (mA) Ta = –20°C Ta = 75°C Duty-Cycle-Collector Characteristics (M54526P) 300 0 Ta = 25°C 100 Duty-Cycle-Collector Characteristics (M54526P) ➁ 0 200 Output saturation voltage VCE (sat) (V) 400 0 300 Ambient temperature Ta (°C) 500 100 400 0 100 Collector current Ic (mA) Power dissipation Pd (W) 2.0 400 300 ➀ 200 ➁ ➂ ➃ ➄ ➅ ➆ •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. 100 0 0 20 40 60 •Ta = 75°C 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 104 VCE = 4V 7 5 Ta = 75°C 3 2 103 7 Ta = –20°C 5 Ta = 25°C 3 Collector current Ic (mA) DC amplification factor hFE 500 400 300 200 Ta = 75°C Ta = 25°C 100 2 Ta = –20°C 102 1 10 2 3 5 7 102 2 0 5 7 103 3 0 Collector current Ic (mA) Input Characteristics 3 4 Clamping Diode Characteristics 500 3 Ta = –20°C 2 Ta = 25°C Ta = 75°C 1 0 5 10 15 Input voltage VI (V) 20 25 Forward bias current IF (mA) Input current II (mA) 2 Input voltage VI (V) 4 0 1 400 300 200 Ta = 25°C 100 0 Ta = –20°C Ta = 75°C 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999