MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION INPUT FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Io(max) = –500mA) Á With output pulldown resistance (Driving available with fluorescent display tube) Á Driving available with PMOS IC output or with TTL output Á Wide operating temperature range (Ta = –20 to +75°C) Á Output current-sourcing type 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 VS 10 9 OUTPUT GND Package type 18P4G(P) NC INPUT APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors FUNCTION The M54564P and M54564FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. Resistance of 50kΩ is connected between each output pin and GND, making these ICs suitable for fluorescent display tubes. VS and GND are used commonly among the eight circuits. Output current is 500mA maximum. Supply voltage VS is 50V maximum. The M54564FP is enclosed in a molded small flat package, enabling space-saving design. IN1→ 1 1 20 NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 VS 11 10 OUTPUT GND Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM VS 20K INPUT 8K 7.2K 1.5K 3K 20K OUTPUT 50K GND The eight circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS Symbol (Unless otherwise noted, Ta = –20 ~ +75 °C) Parameter VCEO VS Collector-emitter voltage Supply voltage VI Input voltage IO Pd Output current Power dissipation Topr Tstg Operating temperature Storage temperature Conditions Output, L VS Current per circuit output, H Ta = 25°C, when mounted on board IO VIH VIL Symbol IS (leak) min Duty Cycle P : no more than 8% FP : no more than 5% Duty Cycle P : no more than 55% FP : no more than 30% “H” input voltage “L” input voltage ELECTRICAL CHARACTERISTICS V V V –500 1.79(P)/1.10(FP) mA W –20 ~ +75 –55 ~ +125 °C °C (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) Unit 50 –0.5 ~ +30 RECOMMENDED OPERATING CONDITIONS Symbol Ratings –0.5 ~ +50 Limits typ max 0 — 50 0 — –350 0 — –100 2.4 — 25 0 — 0.2 Unit V mA V V (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Supply leak current VCE (sat) Collector-emitter saturation voltage II Input current IS Supply current Test conditions Limits Unit min — typ+ — max 100 — — 1.6 1.45 2.4 2.0 V VI = 25V, VS = 30V — — 0.4 2.9 0.7 6.5 mA VS = 50V, V I = 5V — — 5.0 mA VS = 50V, V I = 0.2V VS = 10V, V I = 2.4V, IO = –350mA VS = 10V, V I = 2.4V, IO = –100mA VI = 5V, V S = 10V µA + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) Limits typ max — 185 — ns — 4300 — ns min Unit Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY NOTE 1 TEST CIRCUIT INPUT TIMING DIAGRAM VS 50% Measured device 50% INPUT OUTPUT PG 50Ω RL CL 50% 50% OUTPUT ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0 to 2.4V (2) Input-output conditions : RL = 30Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics Thermal Derating Factor Characteristics 2.0 –500 Output current IO (mA) Power dissipation Pd (W) M54564P 1.5 M54564FP 1.0 0.5 0 0 25 50 75 –300 –200 –100 0 100 VS = 10V VI = 2.4V Ta = 75°C Ta = 25°C Ta = –20°C –400 0 0.5 1.0 1.5 2.0 2.5 Output saturation voltage VCE (sat) (V) Ambient temperature Ta (°C) Duty-Cycle-Output Current Characteristics (M54564P) –500 ➀ Duty-Cycle-Output Current Characteristics (M54564P) –500 –400 –400 ➁ –300 ➂ –200 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C –100 0 0 20 40 60 Duty cycle (%) 80 ➃ ➄ ➅ ➆ ➇ 100 Output current IO (mA) Output current IO (mA) ➀ –300 ➁ –200 ➂ –100 0 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 0 20 40 60 ➃ ➄ ➅ ➆ ➇ 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY Duty-Cycle-Output Current Characteristics (M54564FP) –500 Duty-Cycle-Output Current Characteristics (M54564FP) –500 –300 ➁ –200 –100 0 ➂ ➃ ➄ ➅ ➆ ➇ •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 0 20 40 60 80 Output current IO (mA) Output current IO (mA) ➀ –400 –300 ➀ –200 ➁ –100 0 100 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. 0 20 40 •Ta = 75°C 60 Duty cycle (%) Duty cycle (%) Grounded Emitter Transfer Characteristics Input Characteristics –500 VS = 20V VS-VO = 4V Ta = 75°C Ta = 25°C Ta = –20°C –400 80 100 20 25 VS = 20V Ta = 75°C Ta = 25°C Ta = –20°C 4 –300 –200 –100 0 ➂ ➃ ➄ ➅ ➆ ➇ 5 Input current II (mA) Output current IO (mA) –400 3 2 1 0 0.5 1.0 1.5 Input voltage VI (V) 2.0 0 0 5 10 15 Input voltage VI (V) Aug. 1999