MITSUBISHI RM50C1A-XXS

MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
RM50DA/CA/C1A-XXS
• IDC
• VRRM
DC current .................................. 50A
Repetitive peak reverse voltage
......................300/600V
• trr
Reverse recovery time ............. 0.4µs
• Insulated Type
APPLICATION
Free wheel use, Welder
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5
43.3
16
C1A
36.5
14
18
5.3
CA
DA
R6
φ5.3
8
3–M4
33
3.5
22
LABEL
4.5
24
7
3.5
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25°C, unless otherwise noted)
Voltage class
Parameter
Symbol
6
12
Unit
VRRM
Repetitive peak reverse voltage
300
600
V
VDRM
Non-repetitive peak reverse voltage
360
720
V
VR
Reverse DC voltage
240
480
V
Parameter
Symbol
Conditions
Ratings
Unit
50
A
IDC
DC current
Resistive load, TC=93°C
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
1000
A
I2t
I2t for fusing
Value for one cycle of surge current
4.2×103
A2s
Tj
Junction temperature
–40~150
°C
Tstg
Storage temperature
–40~125
°C
Viso
Isolution voltage
Charged part to case
Main terminal screw M4
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
2500
V
0.98~1.47
N·m
10~15
kg·cm
1.47~1.96
N·m
15~20
kg·cm
90
g
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive reverse current
Tj=150°C, VRRM applied
—
—
20
VFM
Forward voltage
Tj=25°C, IFM=50A, instantaneous meas.
—
1.7
1.8
V
trr
Reverse recovery time
—
—
0.2
µs
Qrr
Reverse recovery charge
—
—
1.5
µC
trr
Reverse recovery time
—
—
0.4
µs
Qrr
Reverse recovery charge
—
—
4.5
µC
Rth (j-c)
Thermal resistance
Junction to case
—
—
0.6
°C/ W
Rth (c-f)
Contact thermal resistance
Case to fin, conductive grease applied
—
—
0.3
°C/ W
*1 6 class: VR=150V
IFM=50A, di/dt=–100A/µs, VR=150/300V*1, Tj=25°C
IFM=50A, di/dt=–150A/µs, VR=150/300V*1, Tj=150°C
mA
12 class: VR=300V
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
PERFORMANCE CURVES
Tj=25°C
0.8
10 2
7
5
3
2
10 1
7
5
3
2
10 0
0.2
0.6
0.4
0.2
1.0
1.8
2.6
3.4
0
10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10
4.2
FORWARD VOLTAGE (V)
TIME (s)
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL)
10 2
7
5
3
2
800
600
Irr (A)
SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
1000
400
1
2 3 4 5 7 10
Qrr
Irr
10 0
trr
10 –1
10 0
7 VR=150/300V
5
di/dt=–100A/µs
3
Tj=25°C
2
Tj=150°C
10 –1
10 –2
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
200
0
10 1
7
5
3
2
10 1
20 30 40 50 70100
trr (µs), Qrr (µC)
10 3
7
5
3
2
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10 0 2 3 4 57 10 1 2 3 4 5
1.0
Zth (j–c) (°C/W)
FORWARD CURRENT
(A)
MAXIMUM FORWARD CHARACTERISTIC
FORWARD CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS
VS. –di/dt (TYPICAL)
10 1
10 1
7
5
3
2
Irr
10 0
Qrr
trr
10 0
7
5
3
2
10 –1
trr (µs), Qrr (µC)
Irr (A)
10 2
7 VR=150/300V
5 IF=50A
Tj=25°C
3
2
Tj=150°C
10 –2
10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
–di/dt (A/µs)
Feb.1999