MITSUBISHI THYRISTOR MODULES TM400HA-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE TM400HA-M,-H,-24,-2H • IT (AV) • VRRM • • • • Average on-state current .......... 400A Repetitive peak reverse voltage ........ 400/800/1200/1600V VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V ONE ARM Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers 46 K A G K 35 K K G A Dimensions in mm 22 OUTLINE DRAWING & CIRCUIT DIAGRAM 2–φ5.5 2 65 17 80 Tab#110, t=0.5 65 9 30 LABEL 64 7 2–M8 Feb.1999 MITSUBISHI THYRISTOR MODULES TM400HA-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Voltage class M H 24 2H Unit VRRM Repetitive peak reverse voltage 400 800 1200 1600 V VRSM Non-repetitive peak reverse voltage 480 960 1350 1700 V VR (DC) DC reverse voltage 320 640 960 1280 V VDRM Repetitive peak off-state voltage 400 800 1200 1600 V VDSM Non-repetitive peak off-state voltage 480 960 1350 1700 V VD (DC) DC off-state voltage 320 640 960 1280 V Ratings Unit 620 A Single-phase, half-wave 180° conduction, TC=66°C 400 A Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 8000 A I2t I2t for fusing Value for one cycle of surge current 2.7 × 105 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 10 W PG (AV) Average gate power dissipation 3.0 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 4.0 A Tj Junction temperature –40~+125 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Symbol IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM Conditions Charged part to case Main terminal screw M8 — Mounting torque Mounting screw M5 — Typical value Weight 2500 V 8.83~10.8 N·m 90~110 kg·cm 1.47~1.96 N·m 15~20 kg·cm 450 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 40 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 40 mA VTM On-state voltage Tj=125°C, ITM=1200A, instantaneous meas. — — 1.4 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case, per 1/2 module — — 0.1 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied, per 1/2 module — — 0.08 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Feb.1999 MITSUBISHI THYRISTOR MODULES TM400HA-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES 10 4 7 Tj=125°C 5 3 2 10000 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 1.0 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 1.4 1.8 2.2 8000 6000 4000 2000 0 2.6 1 ON-STATE VOLTAGE (V) VGT=3.0V Tj=25°C 10 0 7 5 3 2 PG(AV)= 3.0W IGT= 100mA 10 –1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 AVERAGE ON-STATE POWER DISSIPATION (W) 500 TRANSIENT THERMAL IMPEDANCE (°C/W) PGM=10W MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.10 0.08 0.06 0.04 0.02 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 300 90° 130 120 180° 60° 200 100 θ 110 360° RESISTIVE, INDUCTIVE LOAD 100 90 80 70 θ=30° 60° 90° 120° 180° 60 0 0 50 70100 GATE CURRENT (mA) 120° 400 20 30 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 CASE TEMPERATURE (°C) GATE VOLTAGE (V) VFGM=10V 10 1 7 5 3 2 5 7 10 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 2 3 50 100 150 200 250 300 350 400 AVERAGE ON-STATE CURRENT (A) 50 0 100 200 300 400 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM400HA-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) θ=30° 600 270° DC 180° 120° 60° 90° 400 θ 200 0 360° RESISTIVE, INDUCTIVE LOAD 0 200 400 AVERAGE ON-STATE CURRENT (A) 130 120 CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 800 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) θ 110 360° RESISTIVE, INDUCTIVE LOAD 100 90 80 70 DC 60 600 50 θ=30° 60° 90° 0 200 120° 180° 400 270° 600 AVERAGE ON-STATE CURRENT (A) Feb.1999