MOTOROLA MC74HC259

SEMICONDUCTOR TECHNICAL DATA
! !
High–Performance Silicon–Gate CMOS
The MC54/74HC259 is identical in pinout to the LS259. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
The HC259 has four modes of operation as shown in the mode selection
table. In the addressable latch mode, the data on Data In is written into the
addressed latch. The addressed latch follows the data input with all
non–addressed latches remaining in their previous states. In the memory
mode, all latches remain in their previous state and are unaffected by the
Data or Address inputs. In the one–of–eight decoding or demultiplexing
mode, the addressed output follows the state of Data In with all other outputs
in the LOW state. In the Reset mode all outputs are LOW and unaffected by
the address and data inputs. When operating the HC259 as an addressable
latch, changing more than one bit of the address could impose a transient
wrong address. Therefore, this should only be done while in the memory
mode.
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
16
1
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
16
1
D SUFFIX
SOIC PACKAGE
CASE 751B–05
16
1
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 202 FETs or 50.5 Equivalent Gates
PIN ASSIGNMENT
A0
1
16
VCC
A1
2
15
RESET
A2
3
14
ENABLE
Q0
4
13
DATA IN
Q1
5
12
Q7
Q2
6
11
Q6
Q3
7
10
Q5
GND
8
9
Q4
LOGIC DIAGRAM
ADDRESS
INPUTS
4
Q0
5
Q1
6
Q2
7
Q3
9
Q4
10
Q5
11
Q6
12
Q7
1
A0
2
A1
3
A2
DATA IN
13
MODE SELECTION TABLE
NONINVERTING
OUTPUTS
Enable
Reset
L
H
L
H
H
H
L
L
15
RESET
14
ENABLE
Mode
Addressable Latch
Memory
8–Line Demultiplexer
Reset
LATCH SELECTION TABLE
Address Inputs
PIN 16 = VCC
PIN 8 = GND
10/95
 Motorola, Inc. 1995
Ceramic
Plastic
SOIC
1
REV 6
C
B
A
Latch
Addressed
L
L
L
L
H
H
H
H
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
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MC54/74HC259
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
6.0
± 0.1
± 1.0
± 1.0
VOH
Vin = VIH or VIL |Iout|
|Iout|
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
Vin = VIH or VIL |Iout|
|Iout|
Iin
Maximum Input Leakage Current
4.0 mA
5.2 mA
Vin = VCC or GND
4.0 mA
5.2 mA
V
µA
Vin = VCC or GND
6.0
8
80
160
µA
Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ICC
MOTOROLA
Maximum Quiescent Supply
Current (per Package)
2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HC259
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
tPLH,
tPHL
Maximum Propagation Delay, Data to Output
(Figures 1 and 6)
2.0
4.5
6.0
185
37
31
230
46
39
280
56
48
ns
tPLH,
tPHL
Maximum Propagation Delay, Address Select to Output
(Figures 2 and 6)
2.0
4.5
6.0
215
43
37
270
54
46
325
65
55
ns
tPLH,
tPHL
Maximum Propagation Delay, Enable to Output
(Figures 3 and 6)
2.0
4.5
6.0
200
40
34
250
50
43
300
60
51
ns
tPHL
Maximum Propagation Delay, Reset to Output
(Figures 4 and 6)
2.0
4.5
6.0
155
31
26
195
39
33
235
47
40
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 6)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
Maximum Input Capacitance
—
10
10
10
pF
Symbol
Cin
Parameter
Unit
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Package)*
pF
30
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* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input tr = tf = 6 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
tsu
Minimum Setup Time, Address or Data to Enable
(Figure 5)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
th
Minimum Hold Time, Enable to Address or Data
(Figure 5)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
tw
Minimum Pulse Width, Reset or Enable
(Figure 3 or 4)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
Symbol
tr, tf
Parameter
Unit
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
MC54/74HC259
SWITCHING WAVEFORMS
VCC
DATA IN
GND
VCC
50%
tr
tf
DATA IN
VCC
90%
50%
10%
VCC
GND
tPLH
50%
GND
tPHL
tPHL
90%
50%
10%
OUTPUT Q
GND
ADDRESS
SELECT
tPLH
50%
OUTPUT Q
tTLH
tTHL
Figure 1.
Figure 2.
VCC
VCC
DATA IN
tw
tw
50%
50%
DATA IN
GND
GND
tw
VCC
ENABLE
tPHL
VCC
50%
tPLH
50%
RESET
GND
GND
tPHL
OUTPUT Q
50%
OUTPUT Q
Figure 3.
Figure 4.
TEST POINT
DATA IN
OR
ADDRESS
SELECT
ENABLE
VCC
50%
th(H)
tsu
th(L)
tsu
GND
OUTPUT
DEVICE
UNDER
TEST
CL*
VCC
50%
GND
* Includes all probe and jig capacitance
Figure 5.
MOTOROLA
Figure 6. Test Circuit
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC259
EXPANDED LOGIC DIAGRAM
DATA INPUT
13
D
D
D
D
4
5
6
7
Q0
Q1
Q2
Q3
A0
ADDRESS
INPUTS
3 TO 8
DECODER
A1
D
A2
D
ENABLE
D
High–Speed CMOS Logic Data
DL129 — Rev 6
10
Q4
Q5
14
D
RESET
9
11
12
Q6
Q7
15
5
MOTOROLA
MC54/74HC259
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
–A
–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
THE LEAD ENTERS THE CERAMIC BODY.
–B
–
L
C
DIM
A
B
C
D
E
F
G
J
K
L
M
N
–T
K
N
SEATING
–
PLANE
E
M
F
J 16 PL
0.25 (0.010)
G
D 16 PL
0.25 (0.010)
T A
M
9
1
8
T B
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
–A
–
16
M
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T
–
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A
–
16
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
–T
SEATING
–
PLANE
MOTOROLA
J
M
D 16 PL
0.25 (0.010)
M
T
B
S
A
S
6
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.740 0.770 18.80 19.55
6.35
0.250 0.270
6.85
3.69
0.145 0.175
4.44
0.39
0.015 0.021
0.53
1.02
0.040 0.070
1.77
0.100 BSC
2.54 BSC
0.050 BSC
1.27 BSC
0.21
0.008 0.015
0.38
2.80
0.110 0.130
3.30
7.50
0.295 0.305
7.74
0°
0°
10°
10°
0.020 0.040
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B
–
MILLIMETERS
MIN
MAX
19.05 19.93
6.10
7.49
—
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
15°
0°
1.01
0.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
S
S
INCHES
MIN
MAX
0.750 0.785
0.240 0.295
—
0.200
0.015 0.020
0.050 BSC
0.055 0.065
0.100 BSC
0.008 0.015
0.125 0.170
0.300 BSC
15°
0°
0.020 0.040
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0°
7°
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC259
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High–Speed CMOS Logic Data
DL129 — Rev 6
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