SEMICONDUCTOR TECHNICAL DATA ! # "! ! ! High–Performance Silicon–Gate CMOS The MC54/74C4060A is identical in pinout to the standard CMOS MC14060B. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. This device consists of 14 master–slave flip–flops and an oscillator with a frequency that is controlled either by a crystal or by an RC circuit connected externally. The output of each flip–flop feeds the next and the frequency at each output is half of that of the preceding one. The state of the counter advances on the negative–going edge of the Osc In. The active–high Reset is asynchronous and disables the oscillator to allow very low power consumption during stand–by operation. State changes of the Q outputs do not occur simultaneously because of internal ripple delays. Therefore, decoded output signals are subject to decoding spikes and may have to be gated with Osc Out 2 of the HC4060A. • • • • • • • J SUFFIX CERAMIC PACKAGE CASE 620–10 16 1 N SUFFIX PLASTIC PACKAGE CASE 648–08 16 1 D SUFFIX SOIC PACKAGE CASE 751B–05 16 1 Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2 to 6 V Low Input Current: 1 µA High Noise Immunity Characteristic of CMOS Devices In Compliance With JEDEC Standard No. 7A Requirements Chip Complexity: 390 FETs or 97.5 Equivalent Gates DT SUFFIX TSSOP PACKAGE CASE 748C–03 16 1 ORDERING INFORMATION MC54HCXXXXAJ MC74HCXXXXAN MC74HCXXXXAD MC74HCXXXXADT LOGIC DIAGRAM Osc Out 1 Osc Out 2 10 FUNCTION TABLE 9 7 5 Osc In 11 4 6 14 13 15 1 2 3 Reset 12 Clock Reset Output State X L L H No Charge Advance to Next State All Outputs Are Low Q4 Q5 Q6 Q7 Q8 Pinout: 16–Lead Plastic Package (Top View) Q9 VCC 16 Q10 Q12 Q10 Q8 Q9 15 14 13 Osc Osc Reset Osc In Out 1 Out 2 12 11 10 9 8 GND Q13 Q14 Pin 16 = VCC Pin 8 = GND 1 2 3 4 5 6 7 Q12 Q13 Q14 Q6 Q5 Q7 Q4 3/96 10/95 Motorola, Inc. 1996 Motorola, Inc. 1995 Ceramic Plastic SOIC TSSOP 3–1 3–1 REV 1 REV 6 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MC54/74HC4060A MAXIMUM RATINGS* Symbol VCC Parameter DC Supply Voltage (Referenced to GND) Value Unit – 0.5 to + 7.0 V V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, Plastic or Ceramic DIP† SOIC Package† TSSOP Package† 750 500 450 mW Tstg Storage Temperature Range – 65 to + 150 _C Iin TL This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C Lead Temperature, 1 mm from Case for 10 Seconds Plastic DIP, SOIC or TSSOP Package Ceramic DIP 260 300 * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) Min Max Unit 2.5* 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature Range, All Package Types tr, tf Input Rise/Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V * The oscillator is guaranteed to function at 2.5 V minimum. However, parametrics are tested at 2.0 V by driving Pin 11 with an external clock source. DC CHARACTERISTICS (Voltages Referenced to GND) Symbol Parameter Condition Guaranteed Limit VCC V –55 to 25°C ≤85°C ≤125°C Unit VIH Minimum High–Level Input Voltage Vout = 0.1V or VCC –0.1V |Iout| ≤ 20µA 2.0 3.0 4.5 6.0 1.50 2.10 3.15 4.20 1.50 2.10 3.15 4.20 1.50 2.10 3.15 4.20 V VIL Maximum Low–Level Input Voltage Vout = 0.1V or VCC – 0.1V |Iout| ≤ 20µA 2.0 3.0 4.5 6.0 0.50 0.90 1.35 1.80 0.50 0.90 1.35 1.80 0.50 0.90 1.35 1.80 V Minimum High–Level Output Voltage (Q4–Q10, Q12–Q14) Vin = VIH or VIL |Iout| ≤ 20µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.20 3.70 5.20 VOH |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA Vin =VIH or VIL MOTOROLA 3–2 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC4060A DC CHARACTERISTICS (Voltages Referenced to GND) Symbol VOL Parameter Condition Maximum Low–Level Output Voltage (Q4–Q10, Q12–Q14) Vin = VIH or VIL |Iout| ≤ 20µA Vin = VIH or VIL VOH Minimum High–Level Output Voltage (Osc Out 1, Osc Out 2) Vin = VCC or GND |Iout| ≤ 20µA Vin =VCC or GND VOL Maximum Low–Level Output Voltage (Osc Out 1, Osc Out 2) ICC |Iout| ≤ 0.7mA |Iout| ≤ 1.0mA |Iout| ≤ 1.3mA Vin = VCC or GND |Iout| ≤ 20µA Vin =VCC or GND Iin |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA |Iout| ≤ 0.7mA |Iout| ≤ 1.0mA |Iout| ≤ 1.3mA Guaranteed Limit VCC V –55 to 25°C ≤85°C ≤125°C Unit 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.20 3.70 5.20 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 V V Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0µA 6.0 4 40 160 µA NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) VCC V Guaranteed Limit –55 to 25°C ≤85°C ≤125°C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 2.0 3.0 4.5 6.0 6.0 10 30 50 9.0 14 28 45 8.0 12 25 40 MHz tPLH, tPHL Maximum Propagation Delay, Osc In to Q4* (Figures 1 and 4) 2.0 3.0 4.5 6.0 300 180 60 51 375 200 75 64 450 250 90 75 ns tPLH, tPHL Maximum Propagation Delay, Osc In to Q14* (Figures 1 and 4) 2.0 3.0 4.5 6.0 500 350 250 200 750 450 275 220 1000 600 300 250 ns tPHL Maximum Propagation Delay, Reset to Any Q (Figures 2 and 4) 2.0 3.0 4.5 6.0 195 75 39 33 245 100 49 42 300 125 61 53 ns tPLH, tPHL Maximum Propagation Delay, Qn to Qn+1 (Figures 3 and 4) 2.0 3.0 4.5 6.0 75 60 15 13 95 75 19 16 125 95 24 20 ns Symbol Parameter High–Speed CMOS Logic Data DL129 — Rev 6 3–3 MOTOROLA MC54/74HC4060A AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) – continued Symbol tTLH, tTHL Cin Parameter Maximum Output Transition Time, Any Output (Figures 1 and 4) Guaranteed Limit VCC V –55 to 25°C ≤85°C ≤125°C Unit 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns 10 10 10 pF Maximum Input Capacitance NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High– Speed CMOS Data Book (DL129/D). * For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations: VCC = 2.0 V: tP = [93.7 + 59.3 (n–1)] ns VCC = 4.5 V: tP = [30.25 + 14.6 (n–1)] ns VCC = 3.0 V: tP = [61.5+ 34.4 (n–1)] ns VCC = 6.0 V: tP = [24.4 + 12 (n–1)] ns Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Package)* pF 35 * Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). TIMING REQUIREMENTS (Input tr = tf = 6 ns) Guaranteed Limit VCC V –55 to 25°C ≤85°C ≤125°C Unit Minimum Recovery Time, Reset Inactive to Clock (Figure 2) 2.0 3.0 4.5 6.0 100 75 20 17 125 100 25 21 150 120 30 25 ns tw Minimum Pulse Width, Clock (Figure 1) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 23 19 ns tw Minimum Pulse Width, Reset (Figure 2) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 23 19 ns Maximum Input Rise and Fall Times (Figure 1) 2.0 3.0 4.5 6.0 1000 800 500 400 1000 800 500 400 1000 800 500 400 ns Symbol trec tr, tf Parameter NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). MOTOROLA 3–4 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC4060A PIN DESCRIPTIONS INPUTS OUTPUTS Q4—Q10, Q12–Q14 (Pins 7, 5, 4, 6, 13, 15, 1, 2, 3) Osc In (Pin 11) Active–high outputs. Each Qn output divides the Clock input frequency by 2N. The user should note the Q1, Q2, Q3 and Q11 are not available as outputs. Negative–edge triggering clock input. A high–to–low transition on this input advances the state of the counter. Osc In may be driven by an external clock source. Osc Out 1, Osc Out 2 (Pins 9, 10) Oscillator outputs. These pins are used in conjunction with Osc In and the external components to form an oscillator (See NO TAG and NO TAG). When Osc In is being driven with an external clock source, Osc Out 1 and Osc Out 2 must be left open circuited. With the crystal oscillator configuration in Figure 6, Osc Out 2 must be left open circuited. Reset (Pin 12) Active–high reset. A high level applied to this input asynchronously resets the counter to its zero state (forcing all Q outputs low) and disables the oscillator. SWITCHING WAVEFORMS tf tw tr 90% 50% 10% Osc In Reset VCC GND tPHL GND tw 1/fMAX Q tPHL tPLH Q VCC 50% 90% 50% 10% 50% trec tTLH Osc In tTHL VCC 50% GND Figure 1. Figure 2. TEST POINT VCC Qn OUTPUT 50% DEVICE UNDER TEST GND tPLH Qn+1 tPHL CL* 50% *Includes all probe and jig capacitance Figure 3. High–Speed CMOS Logic Data DL129 — Rev 6 Figure 4. Test Circuit 3–5 MOTOROLA MC54/74HC4060A Q4 Q5 7 Osc Out 1 Osc In Reset Q13 Q14 1 2 3 C Q C Q C Q C Q C Q C C Q C Q C Q C Q C Q C R Osc Out 2 Q12 5 Q R 9 Q6 = Pin 4 Q7 = Pin 6 Q8 = Pin 14 Q9 = Pin 13 10 Q10 = Pin 15 VCC = Pin 16 GND = Pin 8 11 12 Figure 5. Expanded Logic Diagram Reset For 2.0V ≤ VCC ≤ 6.0V 10Rtc > RS > 2Rtc 400Hz ≤ f ≤ 400Khz: 12 Osc In 11 Osc Out 1 10 Osc Out 2 9 f Rtc RS Ctc [ 3 R1tcCtc (f in Hz, Rtc in ohms, Ctc in farads) The formula may vary for other frequencies. Figure 6. Oscillator Circuit Using RC Configuration Reset 12 Osc In 11 Osc Out 1 10 9 Osc Out 2 Rf R1 C1 C2 Figure 7. Pierce Crystal Oscillator Circuit MOTOROLA 3–6 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC4060A TABLE 1. CRYSTAL OSCILLATOR AMPLIFIER SPECIFICATIONS (TA = 25°C; Input = Pin 11, Output = Pin 10) Type Positive Reactance (Pierce) Input Resistance, Rin 60MΩ Minimum Output Impedance, Zout (4.5V Supply) 200Ω (See Text) Input Capacitance, Cin 5pF Typical Output Capacitance, Cout 7pF Typical Series Capacitance, Ca 5pF Typical Open Loop Voltage Gain with Output at Full Swing, α 3Vdc Supply 4Vdc Supply 5Vdc Supply 6Vdc Supply 5.0 Expected Minimum 4.0 Expected Minimum 3.3 Expected Minimum 3.1 Expected Minimum PIERCE CRYSTAL OSCILLATOR DESIGN RS 1 2 LS 1 CS 2 1 Re Xe 2 CO Value are supplied by crystal manufacturer (parallel resonant crystal). Figure 8. Equivalent Crystal Networks RS –jXC2 R Rload Ca –jXCo jXLs Xload Zload –jXCs Cin –jXC Cout NOTE: C = C1 + Cin and R = R1 + Rout. Co is considered as part of the load. Ca and Rf typically have minimal effect below 2MHz. Values are listed in Table 1. Figure 9. Series Equivalent Crystal Load Figure 10. Parasitic Capacitances of the Amplifier High–Speed CMOS Logic Data DL129 — Rev 6 3–7 MOTOROLA MC54/74HC4060A DESIGN PROCEDURES The following procedure applies for oscillators operating below 2MHz where Z is a resistor R1. Above 2MHz, additional impedance elements should be considered: C out and Ca of the amp, feedback resistor Rf, and amplifier phase shift error from 180°C. Step 1: Calculate the equivalent series circuit of the crystal at the frequency of oscillation. Ze + **jXjXCCo)(RRs s))jXjXLsL**jXjXCCs) + Re ) jXe o s s Reactance jXe should be positive, indicating that the crystal is operating as an inductive reactance at the oscillation frequency. The maximum Rs for the crystal should be used in the equation. Step 2: Determine β, the attenuation, of the feedback network. For a closed-loop gain of 2,Aνβ = 2,β = 2/Aν where Aν is the gain of the HC4060A amplifier. Step 3: Determine the manufacturer’s loading capacitance. For example: A manufacturer may specify an external load capacitance of 32pF at the required frequency. Step 4: Determine the required Q of the system, and calculate Rload, For example, a manufacturer specifies a crystal Q of 100,000. In-circuit Q is arbitrarily set at 20% below crystal Q or 80,000. Then Rload = (2πfoLS/Q) – Rs where Ls and Rs are crystal parameters. Step 5: Simultaneously solve, using a computer, b @ XC2 + R @ Re )XCXC2 (Xe * XC) (with feedback phase shift = 180°) ( Eq 1 ) + XC2 ) XC ) ReRXC2 + XCload (where the loading capacitor is an external load, not including Co) RXCoXC2 [(XC ) XC2)(XC ) XCo) * XC(XC ) XCo ) XC2)] Rload + X2C2(XC ) XCo)2 ) R2(XC ) XCo ) XC2)2 Xe ( Eq 2 ) ( Eq 3 ) Here R = Rout + R1. Rout is amp output resistance, R1 is Z. The C corresponding to XC is given by C = C1 + Cin. Alternately, pick a value for R1 (i.e, let R1 = RS). Solve Equations 1 and 2 for C1 and C2. Use Equation 3 and the fact that Q = 2πfoLs/(Rs + Rload) to find in-circuit Q. If Q is not satisfactory pick another value for R1 and repeat the procedure. CHOOSING R1 the first overtone. Rf must be large enough so as to not affect the phase of the feedback network in an appreciable manner. Power is dissipated in the effective series resistance of the crystal. The drive level specified by the crystal manufacturer is the maximum stress that a crystal can withstand without damage or excessive shift in frequency. R1 limits the drive level. To verify that the maximum dc supply voltage does not overdrive the crystal, monitor the output frequency as a function of voltage at Osc Out 2 (Pin 9). The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal will decrease in frequency or become unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1. ACKNOWLEDGEMENTS AND RECOMMENDED REFERENCES The following publications were used in preparing this data sheet and are hereby acknowledged and recommended for reading: Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. D. Babin, “Designing Crystal Oscillators”, Machine Design, March 7, 1985. D. Babin, “Guidelines for Crystal Oscillator Design”, Machine Design, April 25, 1985. ALSO RECOMMENDED FOR READING: E. Hafner, “The Piezoelectric Crystal Unit-Definitions and Method of Measurement”, Proc. IEEE, Vol. 57, No. 2, Feb., 1969. D. Kemper, L. Rosine, “Quartz Crystals for Frequency Control”, Electro-Technology, June, 1969. P. J. Ottowitz, “A Guide to Crystal Selection”, Electronic Design, May, 1966. SELECTING Rf The feedback resistor, Rf, typically ranges up to 20MΩ. Rf determines the gain and bandwidth of the amplifier. Proper bandwidth insures oscillation at the correct frequency plus roll-off to minimize gain at undesirable frequencies, such as MOTOROLA 3–8 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC4060A 1 2 4 8 16 32 64 128 256 512 1024 2048 4096 8192 16384 Clock Reset Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q12 Q13 Q14 Figure 11. Timing Diagram High–Speed CMOS Logic Data DL129 — Rev 6 3–9 MOTOROLA MC54/74HC4060A OUTLINE DIMENSIONS J SUFFIX CERAMIC PACKAGE CASE 620–10 ISSUE V –A – 16 9 1 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIM F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY. –B – L C DIM A B C D E F G J K L M N –T K N SEATING – PLANE E M F J 16 PL 0.25 (0.010) G D 16 PL 0.25 (0.010) T A M 9 1 8 T B N SUFFIX PLASTIC PACKAGE CASE 648–08 ISSUE R –A – 16 M C DIM A B C D F G H J K L M S L S –T – SEATING PLANE K H D 16 PL 0.25 (0.010) M M J G T A M D SUFFIX PLASTIC SOIC PACKAGE CASE 751B–05 ISSUE J –A – 16 1 P 8 PL 0.25 (0.010) 8 B M M G K F R X 45° C –T SEATING – PLANE MOTOROLA J M D 16 PL 0.25 (0.010) M T B S A S 3–10 INCHES MILLIMETERS MIN MAX MIN MAX 0.740 0.770 18.80 19.55 6.35 0.250 0.270 6.85 3.69 0.145 0.175 4.44 0.39 0.015 0.021 0.53 1.02 0.040 0.070 1.77 0.100 BSC 2.54 BSC 0.050 BSC 1.27 BSC 0.21 0.008 0.015 0.38 2.80 0.110 0.130 3.30 7.50 0.295 0.305 7.74 0° 0° 10° 10° 0.020 0.040 0.51 1.01 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 –B – MILLIMETERS MIN MAX 19.05 19.93 6.10 7.49 — 5.08 0.39 0.50 1.27 BSC 1.40 1.65 2.54 BSC 0.21 0.38 3.18 4.31 7.62 BSC 15° 0° 1.01 0.51 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B F S S INCHES MIN MAX 0.750 0.785 0.240 0.295 — 0.200 0.015 0.020 0.050 BSC 0.055 0.065 0.100 BSC 0.008 0.015 0.125 0.170 0.300 BSC 15° 0° 0.020 0.040 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0° 7° 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0° 7° 0.229 0.244 0.010 0.019 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC4060A OUTLINE DIMENSIONS DT SUFFIX TSSOP PACKAGE CASE 948C–03 ISSUE B A –P– 16x K REF 0.200 (0.008) 16 M T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE –U–. 9 B L PIN 1 IDENTIFICATION 1 8 –U– C 0.100 (0.004) –T– M D H G SEATING PLANE A K K1 J1 M J DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX ––– 5.10 4.30 4.50 ––– 1.20 0.05 0.25 0.45 0.55 0.65 BSC 0.22 0.23 0.09 0.24 0.09 0.18 0.16 0.32 0.16 0.26 6.30 6.50 0° 10° INCHES MIN MAX ––– 0.200 0.169 0.177 ––– 0047 0.002 0.010 0.018 0.022 0.026 BSC 0.009 0.010 0.004 0.009 0.004 0.007 0.006 0.013 0.006 0.010 0.248 0.256 0° 10 ° A F SECTION A–A Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] –TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 High–Speed CMOS Logic Data DL129 — Rev 6 ◊ CODELINE *MC54/74HC4060A/D* 3–11 MC54/74HC4060A/D MOTOROLA