MOTOROLA MJE270

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by MJE270/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed specifically for use with the MC3419 Solid–State Subscriber Loop
Interface Circuit (SLIC).
• High Safe Operating Area
IS/B @ 40 V, 1.0 s = 0.375 A — TO–126
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain
hFE @ 120 mA, 10 V = 1500 (Min)
2.0 AMPERE
COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
100 VOLTS
15 WATTS
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CASE 77–08
TO–225AA TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
— Peak
IC
2.0
4.0
Adc
Base Current
IB
0.1
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
15
0.12
Watts
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
1.5
0.012
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.33
_C/W
Thermal Resistance, Junction to Ambient
RθJA
83.3
_C/W
Collector–Emitter Voltage
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
—
Vdc
Collector Cutoff Current
(VCE = 100 Vdc, IB = 0)
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
—
0.3
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
0.1
mAdc
IS/b
375
—
Adc
500
1500
—
—
—
—
2.0
3.0
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, non–repetitive)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 mAdc, VCE = 3.0 Vdc)
(IC = 120 mAdc, VCE = 10 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 0.2 mAdc)
(IC = 120 mAdc, IB = 1.2 mAdc)
VCE(sat)
Vdc
Base–Emitter On Voltage
(IC = 120 mAdc, VCE = 10 Vdc)
VBE(on)
—
2.0
Vdc
fT
6.0
—
MHz
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 0.05 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
NOTES:
(1) Pulse Test: Pulse Width
(2) fT = hfe• ftest.
10
VCE = 3.0 V
150°C
3000
25°C
– 55°C
1000
700
500
300
100
0.015
0.03
0.5 0.7
0.05 0.07 0.1
0.3
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2
2.0%.
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
10,000
7000
5000
300 µs, Duty Cycle
1.0
1.5
5.0
1.0
dc
0.5
MJE270/MJE271
0.1
0.05
0.01
1.0
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
7.0 10
3.0
30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70
Figure 2. Safe Operating Area
Motorola Bipolar Power Transistor Device Data
100
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*MJE270/D*
MJE270/D