MOTOROLA BU806

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by BU806/D
SEMICONDUCTOR TECHNICAL DATA
8.0 AMPERE
DARLINGTON
NPN POWER
TRANSISTORS
60 WATTS
200 VOLTS
This Darlington transistor is a high voltage, high speed device for use in horizontal
deflection circuits in TV’s and CRT’s.
• High Voltage: VCEV = 330 or 400 V
• Fast Switching Speed:
tc = 1.0 µs (max)
• Low Saturation Voltage:
VCE(sat) = 1.5 V (max)
• Packaged in JEDEC TO–220AB
• Damper Diode VF is specified.
VF = 2.0 V (max)
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Symbol
BU806
Unit
Collector–Emitter Voltage
Rating
VCEO
200
Vdc
Collector–Emitter Voltage
VCEV
400
Vdc
Collector–Base Voltage
VCBO
400
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
— Peak
IC
8.0
15
Adc
Emitter–Collector Diode Current
IF
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation, TC = 25°C
Derate above TC = 25_C
PD
60
0.48
Watts
W/_C
TJ, Tstg
– 65 to 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.08
_C/W
Thermal Resistance, Junction to Ambient
RθJA
70
_C/W
Lead Temperature for Soldering Purposes,
1/8″ from Case for 5.0 Seconds
TL
275
_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BU806
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
200
—
—
Vdc
Collector Cutoff Current
(VCE = Rated VCBO, VBE = 0)
ICES
—
—
100
µAdc
Collector Cutoff Current
(VCE = Rated VCEV, VBE(off) = 6.0 Vdc)
ICEV
—
—
100
µAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
—
3.0
mAdc
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 50 mAdc)
VCE(sat)
—
—
1.5
Vdc
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 50 mAdc)
VBE(sat)
—
—
2.4
Vdc
VF
—
—
2.0
Vdc
ton
—
0.35
—
µs
ts
—
0.55
—
µs
tf
—
0.20
—
µs
tc
—
0.40
1.0
µs
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS (1)
Emitter–Collector Diode Forward Voltage
(IF = 4.0 Adc)
SWITCHING CHARACTERISTICS
Turn–On Time
(Resistive Load, VCC = 100 Vdc,
IC = 5.0 Adc, IB1 = 50 mAdc,
IB2 = 500 mAdc)
Storage Time
Fall Time
Crossover Time
(IC = 5.0 Adc, IB1 = 50 mAdc, VBE(off) = 4.0 Vdc,
Vclamp = 200 Vdc, L = 500 µH)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
1%.
20
hFE, DC CURRENT GAIN
400
IC, COLLECTOR CURRENT (AMPS)
600
VCE = 5.0 V
TJ = 25°C
300
200
100
80
60
10 non–repetitive
1.0 ms
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C
0.2
0.3
0.5 0.7 1.0
5.0 7.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2
10 µs
dc
1.0
40
30
5.0 ms
10
0
3.0
50 ms
BU806
60
100
200 300
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Safe Operating Area (FBSOA)
Motorola Bipolar Power Transistor Device Data
BU806
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
BU806
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4
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Motorola Bipolar Power Transistor Device Data
*BU806/D*
BU806/D